公开(公告)号：US20190339211A1

公开(公告)日：2019-11-07

申请号：US16465161

申请日：2017-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Ralph Timotheus HUIJGEN ,  Marc Jurian KEA ,  Marcel Theodorus Maria VAN KESSEL ,  Masashi ISHIBASHI ,  Chi-Hsiang FAN ,  Hakki Ergün CEKLI ,  Youping ZHANG ,  Maurits VAN DER SCHAAR ,  Liping REN

IPC: G01N21/956 ,  G03F7/20 ,  H01L21/66 ,  G03F9/00

Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.

公开(公告)号：US20180364590A1

公开(公告)日：2018-12-20

申请号：US16061236

申请日：2016-11-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Youping ZHANG ,  Arie Jeffrey DEN BOEF ,  Feng XIAO ,  Martin EBERT

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/88

Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.

公开(公告)号：US20180238737A1

公开(公告)日：2018-08-23

申请号：US15962826

申请日：2018-04-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Chi-Hsiang FAN ,  Maurits VAN DER SCHAAR ,  Youping ZHANG

IPC: G01J3/447 ,  G03C7/00

CPC classification number: G01J3/447 ,  G01J2003/283 ,  G01N21/47 ,  G03C7/00 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683

Abstract: A method of measuring n values of a parameter of interest (e.g., overlay) relating to a structure forming process, where n>1. The method includes performing n measurements on each of n+1 targets, each measurement performed with measurement radiation having a different wavelength and/or polarization combination and determining the n values for a parameter of interest from the n measurements of n+1 targets, each of the n values relating to the parameter of interest for a different pair of the layers. Each target includes n+1 layers, each layer including a periodic structure, the targets including at least n biased targets having at least one biased periodic structure formed with a positional bias relative to the other layers, the biased periodic structure being in at least a different one of the layers per biased target. Also disclosed is a substrate having such a target and a patterning device for forming such a target.

公开(公告)号：US20230273529A1

公开(公告)日：2023-08-31

申请号：US18012222

申请日：2021-06-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Satej Subhash KHEDEKAR ,  Henricus Jozef CASTELIJNS ,  Anjan Prasad GANTAPARA ,  Stephen Henry BOND ,  Seyed Iman MOSSAVAT ,  Alexander YPMA ,  Gerald DICKER ,  Ewout Klaas STEINMEIER ,  Chaoqun GUO ,  Chenxi LIN ,  Hongwei CHEN ,  Zhaoze LI ,  Youping ZHANG ,  Yi ZOU ,  Koos VAN BERKEL ,  Joost Johan BOLDER ,  Arnaud HUBAUX ,  Andriy Vasyliovich HLOD ,  Juan Manuel GONZALEZ HUESCA ,  Frans Bernard AARDEN

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/70633 ,  G03F7/7065

Abstract: Generating a control output for a patterning process is described. A control input is received. The control input is for controlling the patterning process. The control input includes one or more parameters used in the patterning process. The control output is generated with a trained machine learning mod& based on the control input, The machine learning model is trained with training data generated from simulation of the patterning process and/or actual process data, The training data includes 1) a plurality of training control inputs corresponding to a plurality of operational conditions of the patterning process, where the plurality of operational conditions of the patterning process are associated with operational condition specific behavior of the patterning process over time, and 2) training control outputs generated using a physical model based on the training control inputs.

公开(公告)号：US20230236512A1

公开(公告)日：2023-07-27

申请号：US18118695

申请日：2023-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping ZHANG ,  Maxime Philippe Frederic Genin ,  Cong Wu ,  Jing Su ,  Weixuan Hu ,  Yi Zou

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70675

Abstract: Methods for training a process model and determining ranking of simulated patterns (e.g., corresponding to hot spots). A method involves obtaining a training data set including: (i) a simulated pattern associated with a mask pattern to be printed on a substrate, (ii) inspection data of a printed pattern imaged on the substrate using the mask pattern, and (iii) measured values of a parameter of the patterning process applied during imaging of the mask pattern on the substrate; and training a machine learning model for the patterning process based on the training data set to predict a difference in a characteristic of the simulated pattern and the printed pattern. The trained machine learning model can be used for determining a ranking of hot spots. In another method a model is trained based on measurement data to predict ranking of the hot spots.

公开(公告)号：US20230144584A1

公开(公告)日：2023-05-11

申请号：US18091716

申请日：2022-12-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Chi-Hsiang FAN ,  Feng CHEN ,  Wangshi ZHAO ,  Youping ZHANG

IPC: G06F30/398 ,  G03F1/36

CPC classification number: G06F30/398 ,  G03F1/36

Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.

公开(公告)号：US20220035256A1

公开(公告)日：2022-02-03

申请号：US17276533

申请日：2019-09-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping ZHANG ,  Weixuan HU ,  Fei YAN ,  Wei PENG ,  Vivek Kumar JAIN

IPC: G03F7/20

Abstract: A method of hot spot ranking for a patterning process. The method includes obtaining (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (ii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots; determining a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process; and determining, via simulation of a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.

公开(公告)号：US20210247701A1

公开(公告)日：2021-08-12

申请号：US17053255

申请日：2019-05-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Danying LI ,  Chi-Hsiang FAN ,  Adbalmohsen ELMALK ,  Youping ZHANG ,  Jay Jianhui CHEN ,  Kui-Jun HUANG

IPC: G03F7/20

Abstract: A method for determining a stack configuration for a substrate subjected to a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map, and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.

公开(公告)号：US20210055663A1

公开(公告)日：2021-02-25

申请号：US17081325

申请日：2020-10-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Youping ZHANG ,  Arie Jeffrey DEN BOEF ,  Feng XIAO ,  Martin EBERT

IPC: G03F7/20 ,  G03F9/00

Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.

公开(公告)号：US20180373168A1

公开(公告)日：2018-12-27

申请号：US16063190

申请日：2016-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits VAN DER SCHAAR ,  Youping ZHANG ,  Hua XU

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/70683 ,  G03F9/7076 ,  G03F9/7088

Abstract: A target structure, wherein the target structure is configured to be measured with a metrology tool that has a diffraction threshold; the target structure including: one or more patterns supported on a substrate, the one or more patterns being periodic with a first period in a first direction and periodic with a second period in a second direction, wherein the first direction and second direction are different and parallel to the substrate, and the first period is equal to or greater than the diffraction threshold and the second period is less than the diffraction threshold.