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公开(公告)号：US20220100098A1
公开(公告)日：2022-03-31
申请号：US17425355
申请日：2020-02-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Hermanus Adrianus DILLEN , Marc Jurian KEA , Mark John MASLOW , Koen THUIJS , Peter David ENGBLOM , Ralph Timotheus HUIJGEN , Daan Maurits SLOTBOOM , Johannes Catharinus Hubertus MULKENS
IPC: G03F7/20
Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.
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2.发明申请Inspection Methods, Substrates Having Metrology Targets, Lithographic System and Device Manufacturing Method 有权检测方法，具有计量目标的基板，平版印刷系统和器件制造方法公开(公告)号：US20160327871A1
公开(公告)日：2016-11-10
申请号：US15105349
申请日：2014-11-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Tjitte NOOITGEDAGT , Marc Jurian KEA
IPC: G03F7/20
CPC classification number: G03F7/70625 , G03F7/70466 , G03F7/70633 , G03F7/70683
Abstract: Disclosed is a method of measuring overlay between upper and lower layers on a substrate using metrology targets formed by a lithographic process. The lithographic process is of a multiple-patterning type whereby first and second distinct populations of structures are formed in a single one of said layers (L1) by respective first and second patterning steps. The metrology target (620) in the single one of said layers comprises a set of structures of which different subsets (642A, 642B) are formed in said first and second patterning steps. An overlay measurement on this target can be used to calculate a combined (average) overlay performance parameter for both of the first and second patterning steps.)
Abstract translation: 公开了一种使用由光刻工艺形成的测量目标来测量衬底上的上层和下层之间的覆盖层的方法。 光刻工艺是多重图案化形式，其中通过相应的第一和第二图案形成步骤，通过第一和第二不同的结构群体形成在单个所述层（L1）中。 所述层中的一个中的测量目标（620）包括在所述第一和第二图案化步骤中形成不同子集（642A，642B）的一组结构。 可以使用该目标上的覆盖测量来计算第一和第二图案化步骤的组合（平均）叠加性能参数。）
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公开(公告)号：US20240111218A1
公开(公告)日：2024-04-04
申请号：US18387082
申请日：2023-11-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Hermanus Adrianus DILLEN , Marc Jurian KEA , Mark John MASLOW , Koen THUIJS , Peter David ENGBLOM , Ralph Timotheus HUIJGEN , Daan Maurits SLOTBOOM , Johannes Catharinus Hubertus MULKENS
IPC: G03F7/00
CPC classification number: G03F7/705 , G03F7/70525 , G03F7/7065 , G03F7/70658
Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.
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Patent Agency Ranking
公开(公告)号：US20240037890A1
公开(公告)日：2024-02-01
申请号：US18267748
申请日：2021-11-24
Applicant: ASML Netherlands B.V.
Inventor： Haoyi LIANG , Bing MA , Zhichao CHEN , Marc Jurian KEA
Abstract: Systems and methods of image alignment are disclosed herein. The method of image alignment may comprise obtaining an image of a sample, obtaining information associated with a corresponding reference image, generating a modified rendered image by blurring a rendered image of the corresponding reference image such that a topology of the rendered image is substantially preserved, wherein a degree of blurring is based on a characteristic of the topology, and aligning the image of the sample with the blurred rendered image. The method may further comprise aligning the image of the sample with the corresponding reference image based on an alignment between the image of the sample and the blurred rendered image.
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公开(公告)号：US20190339211A1
公开(公告)日：2019-11-07
申请号：US16465161
申请日：2017-11-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Ralph Timotheus HUIJGEN , Marc Jurian KEA , Marcel Theodorus Maria VAN KESSEL , Masashi ISHIBASHI , Chi-Hsiang FAN , Hakki Ergün CEKLI , Youping ZHANG , Maurits VAN DER SCHAAR , Liping REN
IPC: G01N21/956 , G03F7/20 , H01L21/66 , G03F9/00
Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.
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公开(公告)号：US20230168594A1
公开(公告)日：2023-06-01
申请号：US17920014
申请日：2021-05-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Hermanus Adrianus DILLEN , Marc Jurian KEA , Roy WERKMAN , Weitian KOU
IPC: G03F9/00
CPC classification number: G03F9/7023 , G03F9/7088
Abstract: A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.
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公开(公告)号：US20210150115A1
公开(公告)日：2021-05-20
申请号：US16629633
申请日：2018-06-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Lin Lee CHEONG , Bruno LA FONTAINE , Marc Jurian KEA , Yasri YUDHISTIRA , Maxime Philippe Frederic GENIN
IPC: G06F30/398 , G06F30/392
Abstract: A method including obtaining verified values of a characteristic of a plurality of patterns on a substrate produced by a device manufacturing process; obtaining computed values of the characteristic using a non-probabilistic model; obtaining values of a residue of the non-probabilistic model based on the verified values and the computed values; and obtaining an attribute of a distribution of the residue based on the values of the residue. Also disclosed herein are methods of computing a probability of defects on a substrate produced by the device manufacturing process, and of obtaining an attribute of a distribution of the residue of a non-probabilistic model.
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公开(公告)号：US20210080838A1
公开(公告)日：2021-03-18
申请号：US16966596
申请日：2019-01-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Marc Jurian KEA , Roy ANUNCIADO
IPC: G03F7/20
Abstract: A method for determining adjustment to a patterning process. The method includes obtaining a probability density function of a parameter related to a feature of a substrate subject to the patterning process based on measurements of the parameter, determining an asymmetry of the probability density function, and determining an adjustment to the patterning process based on the asymmetry of the probability density function of the parameter so as to reduce a probability of the feature having a parameter value that falls outside a range between threshold values of the parameter.
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