公开(公告)号：US06686978B2

公开(公告)日：2004-02-03

申请号：US09796330

申请日：2001-02-28

申请人： Apostolos Voutsas

发明人： Apostolos Voutsas

IPC分类号： G02F1136

CPC分类号： G02F1/13454

摘要： A method is provided to produce liquid crystal displays (LCDs) on polycrystalline films having a single predominant crystal orientation. A layer of amorphous silicon is deposited over a substrate to a thickness suitable for producing a desired crystal orientation. Lateral-seeded excimer laser annealing (LS-ELA) is used to crystallize a region of the amorphous silicon to form a polycrystalline film with a preferred crystal orientation. In an embodiment of the method, the polycrystalline film is polished. A pixel region is formed over a portion of the substrate using either amorphous silicon or polycrystalline silicon. A circuit region is formed over the polycrystalline film.

摘要翻译： 提供一种在具有单个主要晶体取向的多晶膜上制造液晶显示器（LCD）的方法。 将非晶硅层沉积在衬底上至适于产生所需晶体取向的厚度。 使用横向晶种的准分子激光退火（LS-ELA）使非晶硅的区域结晶，形成具有优选结晶取向的多晶膜。 在该方法的一个实施例中，多晶膜被抛光。 使用非晶硅或多晶硅在衬底的一部分上形成像素区域。 在多晶膜上形成电路区域。

公开(公告)号：US06635555B2

公开(公告)日：2003-10-21

申请号：US09796345

申请日：2001-02-28

申请人： Apostolos Voutsas

发明人： Apostolos Voutsas

IPC分类号： C30B1300

CPC分类号： H01L21/02609 ,  H01L21/02595 ,  H01L21/02664 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/2026

摘要： A method is provided to produce thin polycrystalline films having a single predominant crystal orientation. The method is well suited to the production of films for use in production of thin film transistors (TFTs). A layer of amorphous silicon is deposited over a substrate to a thickness suitable for producing a desired crystal orientation. Lateral-seeded excimer laser annealing (LS-ELA) is used to crystallize the amorphous silicon to form a film with a preferred crystal orientation. The crystallized film is then polished to a desired thickness for subsequent processing.

公开(公告)号：US06623653B2

公开(公告)日：2003-09-23

申请号：US09881390

申请日：2001-06-12

申请人： Gaku Furuta ,  Apostolos Voutsas

发明人： Gaku Furuta ,  Apostolos Voutsas

IPC分类号： H01L21302

CPC分类号： G02F1/1368 ,  G02F1/13439 ,  H01L21/32136

摘要： A method has been provided for etching adjoining layers of indium tin oxide (ITO) and silicon in a single, continuous dry etching process. A conventional dry etching gas, such as HI, is used to etch ITO using RF or plasma energy. When the silicon layer underlying the ITO layer is reached, oxygen or nitrogen is added to etching gas to improve the selectivity of ITO to silicon. In some aspects of the invention an etch-stop layer is formed in the silicon layer. A specific example of fabricating a bottom gate thin film transistor (TFT) is also provided where adjoining layers of source metal, ITO, and channel silicon are etched in the same dry etch step.

摘要翻译： 已经提供了一种在单次连续干蚀刻工艺中蚀刻邻接的氧化铟锡（ITO）和硅的方法。 使用诸如HI的常规干蚀刻气体来使用RF或等离子体能量来蚀刻ITO。 当达到ITO层下面的硅层时，向蚀刻气体中加入氧或氮以提高ITO对硅的选择性。 在本发明的一些方面，在硅层中形成蚀刻停止层。 还提供了制造底栅薄膜晶体管（TFT）的具体示例，其中在相同的干蚀刻步骤中蚀刻相邻的源极金属，ITO和沟道硅层。

公开(公告)号：US06580053B1

公开(公告)日：2003-06-17

申请号：US09653484

申请日：2000-08-31

申请人： Apostolos Voutsas

发明人： Apostolos Voutsas

IPC分类号： B23K2600

CPC分类号： B23K26/1435 ,  B23K26/1437 ,  B23K26/147 ,  B23K2101/36

摘要： The invention provides an apparatus for reducing, or eliminating, ambient air in connection with an excimer laser annealing process. Nozzles are provided to direct a flow of gas, preferably helium, neon, argon or nitrogen, at a region overlying the target area of an amorphous silicon layer deposited on an LCD substrate. The nozzles direct a flow of gas at sufficient pressure and flow rate to remove ambient air from the region overlying the target area. With the ambient air, especially oxygen, removed, the laser can anneal the amorphous silicon to produce polycrystalline silicon with less oxygen contamination. In a preferred embodiment, an exhaust system is also provided to remove the gas.

摘要翻译： 本发明提供了一种用于减少或消除与准分子激光退火工艺相关的环境空气的装置。 提供喷嘴以在覆盖沉积在LCD衬底上的非晶硅层的目标区域的区域上引导气体流，优选氦气，氖气，氩气或氮气。 喷嘴以足够的压力和流速引导气流，以从覆盖目标区域的区域去除环境空气。 随着环境空气，特别是氧气被去除，激光器可以退火非晶硅以产生具有较少氧污染的多晶硅。 在优选实施例中，还提供排气系统以去除气体。

公开(公告)号：US06429097B1

公开(公告)日：2002-08-06

申请号：US09576940

申请日：2000-05-22

申请人： Apostolos Voutsas ,  Yukihiko Nakata

发明人： Apostolos Voutsas ,  Yukihiko Nakata

IPC分类号： H01L2120

CPC分类号： C23C14/34 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02631

摘要： A method of physical vapor deposition includes selecting a target material; mixing at least two gases to form a sputtering gas mixture, wherein a first sputtering gas is helium and a second sputtering gas is taken from the gases consisting of neon, argon krypton, xenon and radon; forming a plasma in the sputtering gas mixture atmosphere to sputter atoms from the target material to the substrate thereby forming a layer of target material on the substrate and annealing the substrate and the deposited layer thereon. An improved physical vapor deposition vacuum chamber includes a target held in a target holder, a substrate held in a substrate holder, a plasma arc generator, and heating rods. A sputtering gas feed system is provided for introducing a mixture of sputtering gases into the chamber; as is a vacuum mechanism comprising at least one turbomolecular pump for evacuating the chamber to a pressure of less than 16 mTorr during deposition. The method and apparatus are particularly suited for forming thin film transistors and liquid crystal displays having thin film transistors therein.

摘要翻译： 物理气相沉积的方法包括选择目标材料; 混合至少两种气体以形成溅射气体混合物，其中第一溅射气体是氦气，并且从由氖，氩氪，氙和氡组成的气体中取出第二溅射气体; 在溅射气体混合气氛中形成等离子体，将原子从目标材料溅射到基板，从而在基板上形成目标材料层，并在其上退火基板和沉积层。 改进的物理气相沉积真空室包括保持在靶保持器中的靶，保持在衬底保持器中的衬底，等离子体电弧发生器和加热棒。 提供溅射气体供给系统，用于将溅射气体的混合物引入室中; 真空机构包括至少一个用于在沉积期间将室抽空至小于16mTorr的涡轮分子泵。 该方法和装置特别适用于形成薄膜晶体管和其中具有薄膜晶体管的液晶显示器。

公开(公告)号：US20070155137A1

公开(公告)日：2007-07-05

申请号：US11698623

申请日：2007-01-26

申请人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

发明人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

IPC分类号： H01L21/20

CPC分类号： G02B1/10 ,  C23C16/308 ,  C23C16/509 ,  G02B1/11

摘要： A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y 0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.

摘要翻译： 提供了高密度等离子体法，用于形成SiO x N N Y Y薄膜。 该方法提供衬底并引入硅（Si）前体。 使用高密度（HD）等离子体增强化学气相沉积（PECVD）工艺将薄膜沉积在衬底上。 结果，形成SiO（X + Y <2和Y> 0）的SiO N 薄膜。 SiO 2薄膜可以是化学计量的或非化学计量的。 SiO 2薄膜可以分级，这意味着X和Y的值随着SiO 2 X N的厚度而变化， SUB> Y 薄膜。 此外，该方法能够实现SiO 2薄膜多层结构的原位沉积，其中不同的层可以是化学计量的，非化学计量的，分级的， 以及上述类型的SiO x N N Y Y薄膜的组合。

公开(公告)号：US20070107655A1

公开(公告)日：2007-05-17

申请号：US11653057

申请日：2007-01-13

申请人： Yasuhiro Mitani ,  Apostolos Voutsas ,  Mark Crowder

发明人： Yasuhiro Mitani ,  Apostolos Voutsas ,  Mark Crowder

IPC分类号： C30B23/00 ,  H01L21/76 ,  C30B28/14

CPC分类号： C30B29/06 ,  C30B13/00

摘要： A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having apertures with a first dimension and a second mask section with apertures having a second dimension, less than the first dimension; applying a laser beam having a first energy density to a substrate region; melting a substrate region in response to the first energy density; crystallizing the substrate region; applying a diffracted laser beam to the substrate region; and, in response to the diffracted laser beam, smoothing the substrate region surface. In some aspects of the method, applying a diffracted laser beam to the substrate area includes applying a diffracted laser beam having a second energy density, less than the first energy density, to the substrate region. The second energy density is in the range of 40% to 70% of the first energy density, and preferably in the range of 50% to 60% of the first energy density.

摘要翻译： 提供了具有子分辨率孔径特征的掩模和使用子分辨率掩模图案来平滑退火表面的方法。 该方法包括：提供具有第一波长的激光束; 向具有具有第一尺寸的孔的第一掩模部分和具有小于所述第一尺寸的具有第二尺寸的孔的第二掩模部分提供掩模; 将具有第一能量密度的激光束施加到衬底区域; 响应于第一能量密度熔化基底区域; 使衬底区域结晶; 将衍射激光束施加到所述衬底区域; 并且响应于衍射激光束，平滑基板区域表面。 在该方法的一些方面中，将衍射激光束施加到衬底区域包括将具有小于第一能量密度的第二能量密度的衍射激光束施加到衬底区域。 第二能量密度在第一能量密度的40％至70％的范围内，优选在第一能量密度的50％至60％的范围内。

公开(公告)号：US20060079100A1

公开(公告)日：2006-04-13

申请号：US11218111

申请日：2005-09-01

申请人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

发明人： Pooran Joshi ,  Apostolos Voutsas ,  John Hartzell

IPC分类号： H01L21/469

CPC分类号： H01L21/0217 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/049 ,  H01L29/66666 ,  H01L29/6675

摘要： A method is provided for forming a silicon nitride (SiNx) film. The method comprises: providing a Si substrate or Si film layer; optionally maintaining a substrate temperature of about 400 degrees C., or less; performing a high-density (HD) nitrogen plasma process where a top electrode is connected to an inductively coupled HD plasma source; and, forming a grown layer of SiNx overlying the substrate. More specifically, the HD nitrogen plasma process includes using an inductively coupled plasma (ICP) source to supply power to a top electrode, independent of the power and frequency of the power that is supplied to the bottom electrode, in an atmosphere with a nitrogen source gas. The SiNx layer can be grown at an initial growth rate of at least about 20 Å in about the first minute.

摘要翻译： 提供了形成氮化硅（SiNx）膜的方法。 该方法包括：提供Si衬底或Si膜层; 可选地保持约400℃或更低的衬底温度; 执行高电压（HD）氮等离子体处理，其中顶电极连接到感应耦合的HD等离子体源; 并且在衬底上形成SiN x的生长层。 更具体地说，HD氮等离子体处理包括使用电感耦合等离子体（ICP）源，在氮源的气氛中，独立于供给底部电极的功率的功率和频率，向顶部电极供电 加油站。 SiNx层可以在大约第一分钟内以至少约的初始生长速率生长。

公开(公告)号：US20060054077A1

公开(公告)日：2006-03-16

申请号：US11263604

申请日：2005-10-31

申请人： Apostolos Voutsas ,  Robert Sposili ,  Mark Crowder

发明人： Apostolos Voutsas ,  Robert Sposili ,  Mark Crowder

IPC分类号： C30B15/14

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1285

摘要： A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.

摘要翻译： 提供横向结晶的方法用于增加横向生长长度（LGL）。 将衬底的局部区域加热一段短时间。 当衬底的局部区域仍被加热时，照射覆盖在衬底上的硅膜来退火硅膜，以使与加热的衬底区域热接触的一部分硅膜结晶。 可以使用CO 2激光器作为加热衬底的热源，而使用UV激光或可见光谱激光来照射和结晶膜。

公开(公告)号：US20050236671A1

公开(公告)日：2005-10-27

申请号：US10862761

申请日：2004-06-07

申请人： Paul Schuele ,  Apostolos Voutsas

发明人： Paul Schuele ,  Apostolos Voutsas

IPC分类号： H01L29/10 ,  H01L29/76 ,  H01L29/786

CPC分类号： H01L27/12 ,  H01L29/78624 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/78675

摘要： A vertical thin-film transistor (V-TFT) inverter circuit and a method for forming a multi-planar layout TFT inverter circuit have been provided. The method comprising: forming a P-channel TFT with a gate, a first source/drain (S/D) region in a first horizontal plane, and a second S/D region in a second horizontal plane, different than the first horizontal plane; and, forming an N-channel TFT, adjacent the P-channel TFT, with a gate, a third S/D region in a third horizontal plane, and a fourth S/D region in the second horizontal plane, different than the third horizontal plane. Forming a P-channel TFT includes forming a P-channel top-drain vertical TFT (TDV-TFT), and forming an N-channel TFT includes forming an N-channel TDV-TFT.

摘要翻译： 已经提供了垂直薄膜晶体管（V-TFT）逆变器电路和用于形成多平面布局TFT反相器电路的方法。 该方法包括：形成具有栅极的P沟道TFT，第一水平面中的第一源极/漏极（S / D）区域和与第一水平面不同的第二水平面中的第二S / D区域 ; 以及在第三水平面上形成与P沟道TFT相邻的N沟道TFT，第三水平面中的第三S / D区和第二水平面中的第四S / D区，与第三水平面不同 飞机 形成P沟道TFT包括形成P沟道顶漏垂直TFT（TDV-TFT），并且形成N沟道TFT包括形成N沟道TDV-TFT。