公开(公告)号：US08089071B2

公开(公告)日：2012-01-03

申请号：US11683272

申请日：2007-03-07

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC分类号： H01L29/10

CPC分类号： H01L29/78696 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through irradiation with an energy beam, and a gate electrode configured to be provided to traverse the active region. Successive crystal grain boundaries extend along the gate electrode in a channel part that is the active region overlapping with the gate electrode, and the crystal grain boundaries traverse the channel part and are provided cyclically in a channel length direction.

摘要翻译： 提供薄膜半导体器件。 半导体器件包括通过照射能量束而使活性区域变为多晶区域的半导体薄膜，以及配置为穿过有源区域的栅电极。 相继的晶粒边界在作为与栅电极重叠的有源区的沟道部分中沿着栅电极延伸，并且晶界穿过沟道部分并且沿沟道长度方向循环地设置。

公开(公告)号：US07541615B2

公开(公告)日：2009-06-02

申请号：US11753949

申请日：2007-05-25

申请人： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

发明人： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

IPC分类号： H01L29/10

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

摘要： A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film transistor includes a semiconductor thin film having an active region made to be polycrystalline by irradiation with an energy beam, and a gate electrode provided so as to cross the active region. In a channel part of the active region overlapping with the gate electrode, the crystal state is varied periodically along the channel length direction, and substantially the same crystal state crosses the channel part.

摘要翻译： 提供包括驱动基板的显示器。 排列在驱动基板上的是用于驱动像素电极的多个像素电极和薄膜晶体管。 每个薄膜晶体管包括具有通过照射能量束而被制成多晶的有源区的半导体薄膜和设置成跨越有源区的栅电极。 在与栅极重叠的有源区的沟道部分中，晶体状态沿着沟道长度方向周期性变化，并且基本相同的晶体状态与沟道部分交叉。

公开(公告)号：US20070212825A1

公开(公告)日：2007-09-13

申请号：US11685550

申请日：2007-03-13

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC分类号： H01L21/84

CPC分类号： H01L29/04 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

摘要翻译： 提供一种薄膜半导体器件，其包括半导体薄膜和栅电极。 半导体薄膜通过能量束的照射使有源区域变成多晶区域。 栅电极被设置为横越有源区。 在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。

公开(公告)号：US07144793B2

公开(公告)日：2006-12-05

申请号：US10645805

申请日：2003-08-21

申请人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： H01L21/20

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

公开(公告)号：US20060027810A1

公开(公告)日：2006-02-09

申请号：US11225326

申请日：2005-09-13

申请人： Akio Machida ,  Setsuo Usui ,  Dharam Gosain

发明人： Akio Machida ,  Setsuo Usui ,  Dharam Gosain

IPC分类号： H01L29/76

CPC分类号： H01L29/78621 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/2254 ,  H01L21/268 ,  H01L29/66757

摘要： A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.

摘要翻译： 即使在使用低耐热性基板的情况下也形成了具有良好可控性的低浓度杂质扩散区域。 当掺杂半导体层时，在衬底上形成半导体层之后，通过在等离子体照射时引入氢气并激活半导体中的吸附掺杂剂离子来控制吸收在半导体层表面上的掺杂剂离子的量 层通过准分子激光器。

公开(公告)号：US06645837B2

公开(公告)日：2003-11-11

申请号：US09871033

申请日：2001-05-31

申请人： Dharam Pal Gosain ,  Kazumasa Nomoto ,  Akio Machida ,  Miyako Nakagoe ,  Setsuo Usui

发明人： Dharam Pal Gosain ,  Kazumasa Nomoto ,  Akio Machida ,  Miyako Nakagoe ,  Setsuo Usui

IPC分类号： H01L21425

CPC分类号： H01L29/66757 ,  H01L27/12

摘要： A polycrystalline silicon layer is formed on a substrate. An insulating layer and a gate electrode are formed on the polycrystalline silicon layer. Then, a channel region, a source region and a drain region are formed in a self-aligned manner by doping an impurity in the polycrystalline silicon layer using the gate electrode as a mask. Then, an energy absorption layer is formed so as to cover the entire substrate and a pulsed laser beam is irradiated from the energy absorption layer side. The energy of the pulsed laser beam is almost completely absorbed in the energy absorption layer and a heat treatment is indirectly performed on the underlying layers by radiating the heat. In other words, activation of the impurity and removal of defects in the insulating layer are performed at the same time without damaging the substrate by the heat.

公开(公告)号：US07435668B2

公开(公告)日：2008-10-14

申请号：US11039996

申请日：2005-01-24

申请人： Akio Machida ,  Takahiro Kamei ,  Yoshiyuki Kawana

发明人： Akio Machida ,  Takahiro Kamei ,  Yoshiyuki Kawana

IPC分类号： H01L21/225

CPC分类号： H01L29/66757 ,  H01L27/1292 ,  H01L29/78618

摘要： A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impurity atoms in the compound layer toward the silicon film into a source region and a drain region. Subsequently, the compound layer is removed.

摘要翻译： 将含有杂质离子的溶液施加到硅膜的表面上以形成溶液层，然后干燥成含有杂质的化合物层。 通过用能量束的照射进行热处理，以使化合物层中的杂质原子朝向硅膜扩散到源区和漏区。 随后，除去化合物层。

公开(公告)号：US20080241981A1

公开(公告)日：2008-10-02

申请号：US12134698

申请日：2008-06-06

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC分类号： H01L21/00

CPC分类号： H01L29/04 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

摘要翻译： 提供一种薄膜半导体器件，其包括半导体薄膜和栅电极。 半导体薄膜通过能量束的照射使有源区域变成多晶区域。 栅电极被设置为横越有源区。 在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。

公开(公告)号：US20070212860A1

公开(公告)日：2007-09-13

申请号：US11684908

申请日：2007-03-12

申请人： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

发明人： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

摘要： A method for crystallizing a semiconductor thin film is provided. The method includes continuously irradiating an energy beam on a semiconductor thin film while scanning at a given speed, wherein the semiconductor thin film is completely melted and the irradiation conditions of the energy beam are so set that the semiconductor thin film at a central position of the energy beam is finally crystallized in association with the scanning with the energy beam.

摘要翻译： 提供了一种使半导体薄膜结晶的方法。 该方法包括在以给定速度扫描的同时在半导体薄膜上连续照射能量束，其中半导体薄膜完全熔化，能量束的照射条件如此设定，使得半导体薄膜位于 能量束最终与能量束的扫描相结合。

公开(公告)号：US06953754B2

公开(公告)日：2005-10-11

申请号：US10478888

申请日：2002-06-04

申请人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

发明人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

IPC分类号： B32B7/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/822 ,  H01L27/04 ,  H01L29/786 ,  H01L31/04 ,  H01L21/31

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78678

摘要： The invention provides a functional device having no cracks and capable of delivering good functional characteristics and a method of manufacturing the same. A functional layer (14) is formed by crystallizing an amorphous silicon layer as a precursor layer by laser beam irradiation. A laser beam irradiation conducts heat up to a substrate (11) to cause it to try to expand; a stress to be produced by the difference in thermal expansion coefficient between the substrate (11) and the functional layer (14) is shut off by an organic polymer layer (12) lower in thermal expansion coefficient than the substrate (11), thereby causing no cracks nor separations in the functional layer (14). The organic polymer layer (12) is preferably made of an acrylic resin, an epoxy resin, or a polymer material containing these that is deformed by an optical or thermal process to undergo a three-dimensional condensation polymerization, for higher compactness and hardness. Inserting a metal layer and an inorganic heat resistant layer between the substrate (11) and the functional layer (14) will permit a more powerful laser irradiation.

摘要翻译： 本发明提供了一种没有裂纹并且能够提供良好的功能特性的功能装置及其制造方法。 通过激光束照射使非晶硅层作为前体层结晶而形成功能层（14）。 激光束照射将热量传导到衬底（11）以使其试图膨胀; 由基板（11）和功能层（14）之间的热膨胀系数的差异产生的应力由热膨胀系数低于基板（11）的有机聚合物层（12）切断，从而导致 在功能层（14）中没有裂纹或分离。 有机聚合物层（12）优选由丙烯酸树脂，环氧树脂或包含它们的聚合物材料制成，这些材料通过光学或热过程变形以进行三维缩聚，以获得更高的紧凑性和硬度。 在基板（11）和功能层（14）之间插入金属层和无机耐热层将允许更强大的激光照射。