公开(公告)号：US07144793B2

公开(公告)日：2006-12-05

申请号：US10645805

申请日：2003-08-21

申请人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： H01L21/20

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

公开(公告)号：US07538014B2

公开(公告)日：2009-05-26

申请号：US11553054

申请日：2006-10-26

申请人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： H01L21/00

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

摘要翻译： 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US07169690B2

公开(公告)日：2007-01-30

申请号：US11098846

申请日：2005-04-05

申请人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： H01L21/20

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

摘要翻译： 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US20070051302A1

公开(公告)日：2007-03-08

申请号：US11553054

申请日：2006-10-26

申请人： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

摘要翻译： 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US20050172888A1

公开(公告)日：2005-08-11

申请号：US11098846

申请日：2005-04-05

申请人： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： G02F1/1368 ,  C23C14/14 ,  C23C14/34 ,  C23C14/58 ,  C23C16/24 ,  C23C16/26 ,  C23C16/28 ,  C23C16/56 ,  C30B13/00 ,  C30B13/24 ,  G09G3/36 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

摘要翻译： 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US06953754B2

公开(公告)日：2005-10-11

申请号：US10478888

申请日：2002-06-04

申请人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

发明人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

IPC分类号： B32B7/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/822 ,  H01L27/04 ,  H01L29/786 ,  H01L31/04 ,  H01L21/31

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78678

摘要： The invention provides a functional device having no cracks and capable of delivering good functional characteristics and a method of manufacturing the same. A functional layer (14) is formed by crystallizing an amorphous silicon layer as a precursor layer by laser beam irradiation. A laser beam irradiation conducts heat up to a substrate (11) to cause it to try to expand; a stress to be produced by the difference in thermal expansion coefficient between the substrate (11) and the functional layer (14) is shut off by an organic polymer layer (12) lower in thermal expansion coefficient than the substrate (11), thereby causing no cracks nor separations in the functional layer (14). The organic polymer layer (12) is preferably made of an acrylic resin, an epoxy resin, or a polymer material containing these that is deformed by an optical or thermal process to undergo a three-dimensional condensation polymerization, for higher compactness and hardness. Inserting a metal layer and an inorganic heat resistant layer between the substrate (11) and the functional layer (14) will permit a more powerful laser irradiation.

摘要翻译： 本发明提供了一种没有裂纹并且能够提供良好的功能特性的功能装置及其制造方法。 通过激光束照射使非晶硅层作为前体层结晶而形成功能层（14）。 激光束照射将热量传导到衬底（11）以使其试图膨胀; 由基板（11）和功能层（14）之间的热膨胀系数的差异产生的应力由热膨胀系数低于基板（11）的有机聚合物层（12）切断，从而导致 在功能层（14）中没有裂纹或分离。 有机聚合物层（12）优选由丙烯酸树脂，环氧树脂或包含它们的聚合物材料制成，这些材料通过光学或热过程变形以进行三维缩聚，以获得更高的紧凑性和硬度。 在基板（11）和功能层（14）之间插入金属层和无机耐热层将允许更强大的激光照射。

公开(公告)号：US06794277B2

公开(公告)日：2004-09-21

申请号：US10204167

申请日：2002-10-23

申请人： Akio Machida ,  Setsuo Usui ,  Dharam Pal Gosain

发明人： Akio Machida ,  Setsuo Usui ,  Dharam Pal Gosain

IPC分类号： H01L2126

CPC分类号： H01L29/66757 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/268 ,  H01L29/78621 ,  Y10S438/914 ,  Y10S438/923

摘要： A lower concentration impurity diffusion region can be formed under excellent control, even when a low heat-resistant substrate is used. At the time of doping a semiconductor layer, a mask such as sidewalls (24) where an energy beam passes through, is formed on a part of a surface of a semiconductor layer (21), dopant ions (25) are adsorbed on the surface of the semiconductor layer (21) except a region in which the mask is formed, and an energy beam EBL is irradiated onto the semiconductor layer (21) having the formed mask to introduce the dopant ions into the semiconductor layer (21). In the lower part of the mask such sidewalls (24), diffusion in transverse direction occurs and lower concentration impurity diffusion regions can be formed in excellent reproducibility under excellent control.

摘要翻译： 即使使用低耐热性基板，也可以在优异的控制下形成浓度较低的杂质扩散区域。 在掺杂半导体层时，在半导体层（21）的表面的一部分上形成诸如能量束通过的侧壁（24）的掩模，掺杂离子（25）被吸附在表面 除了形成有掩模的区域之外的半导体层（21）和能量束EBL被照射到具有形成的掩模的半导体层（21）上以将掺杂剂离子引入到半导体层（21）中。 在掩模的下部，这样的侧壁（24）发生横向扩散，并且在优异的控制下可以以优异的再现性形成较低浓度的杂质扩散区域。

公开(公告)号：US06645837B2

公开(公告)日：2003-11-11

申请号：US09871033

申请日：2001-05-31

申请人： Dharam Pal Gosain ,  Kazumasa Nomoto ,  Akio Machida ,  Miyako Nakagoe ,  Setsuo Usui

发明人： Dharam Pal Gosain ,  Kazumasa Nomoto ,  Akio Machida ,  Miyako Nakagoe ,  Setsuo Usui

IPC分类号： H01L21425

CPC分类号： H01L29/66757 ,  H01L27/12

摘要： A polycrystalline silicon layer is formed on a substrate. An insulating layer and a gate electrode are formed on the polycrystalline silicon layer. Then, a channel region, a source region and a drain region are formed in a self-aligned manner by doping an impurity in the polycrystalline silicon layer using the gate electrode as a mask. Then, an energy absorption layer is formed so as to cover the entire substrate and a pulsed laser beam is irradiated from the energy absorption layer side. The energy of the pulsed laser beam is almost completely absorbed in the energy absorption layer and a heat treatment is indirectly performed on the underlying layers by radiating the heat. In other words, activation of the impurity and removal of defects in the insulating layer are performed at the same time without damaging the substrate by the heat.

公开(公告)号：US06716664B2

公开(公告)日：2004-04-06

申请号：US10391811

申请日：2003-03-20

申请人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

发明人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

IPC分类号： H01L5140

CPC分类号： H01L29/78603 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

摘要： A functional device free from cracking and having excellent functional characteristics, and a method of manufacturing the same are disclosed. A low-temperature softening layer (12) and a heat-resistant layer (13) are formed in this order on a substrate (11) made of an organic material such as polyethylene terephthalate, and a functional layer (14) made of polysilicon is formed thereon. The functional layer (14) is formed by crystallizing an amorphous silicon layer, which is a precursor layer, with laser beam irradiation. When a laser beam is applied, heat is transmitted to the substrate (11) and the substrate (11) tends to expand. However, a stress caused by a difference in a thermal expansion coefficient between the substrate (11) and the functional layer (14) is absorbed by the low-temperature softening layer (12), so that no cracks and peeling occurs in the functional layer (14). The low-temperature softening layer (12) is preferably made of a polymeric material containing an acrylic resin. By properly interposing a metal layer and a heat-resistant layer between the substrate (11) and the functional layer (14), a laser beam of higher intensity can be irradiated.

摘要翻译： 公开了一种没有破裂和功能特性优异的功能元件及其制造方法。 在由诸如聚对苯二甲酸乙二醇酯的有机材料制成的基板（11）上依次形成低温软化层（12）和耐热层（13），并且由多晶硅制成的功能层（14） 形成在其上。 通过用激光束照射使作为前体层的非晶硅层结晶来形成功能层（14）。 当施加激光束时，热量传递到基板（11），并且基板（11）趋于膨胀。 然而，由基板（11）和功能层（14）之间的热膨胀系数的差异引起的应力被低温软化层（12）吸收，从而在功能层中不会发生裂纹和剥离 （14）。 低温软化层（12）优选由含有丙烯酸树脂的聚合材料制成。 通过在基板（11）和功能层（14）之间适当地插入金属层和耐热层，可以照射更高强度的激光束。

公开(公告)号：US06821797B2

公开(公告)日：2004-11-23

申请号：US10672202

申请日：2003-09-26

申请人： Akio Machida ,  Dharam Pal Gosain ,  Takashi Noguchi ,  Setsuo Usui

发明人： Akio Machida ,  Dharam Pal Gosain ,  Takashi Noguchi ,  Setsuo Usui

IPC分类号： H01L2100

CPC分类号： H01L31/204 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/202 ,  Y02E10/52 ,  Y02P70/521

摘要： For manufacturing a semiconductor device, such as thin-film solar battery, comprising a base body made of an organic high polymer material, an oxide electrode film and semiconductor thin film each containing at least one kind of group IV elements on the oxide electrode film, one of the semiconductor thin films in contact with the oxide electrode film is stacked by sputtering in a non-reducing atmosphere such as atmosphere not containing hydrogen gas, for example. Thereby, it is ensured that granular products as large as and beyond 3 nm are not contained substantially at the interface between the oxide electrode film and that semiconductor thin film. Therefore, a semiconductor thin film such as amorphous semiconductor thin film can be stacked with enhanced adherence on a plastic substrate having an oxide electrode film like ITO film on its surface.