摘要:
A method of fabricating a Josephson device includes the steps of forming a first superconducting layer and forming a second superconducting layer to form a Josephson junction therebetween, wherein the step of forming the second superconducting layer includes the steps of conducting a first step of forming the second superconducting layer with improved uniformity and conducting a second step of forming the second superconducting layer on the second superconducting layer formed in the first step with improved film quality.
摘要:
An X-ray, neutron or electron diffraction method, which is devoid of the defects of conventional diffraction apparatus using an imaging plate, which can analyzing a sample, in a non-destructive mode without contact and with a good S/N ratio, even when the sample significantly generates fluorescence or scattered X-rays. The method includes the steps of irradiating a predetermined area of the sample with an X-ray, neutron or electron beam whose axis is oriented at a fixed direction to obtain a diffraction ray, rotating the sample while maintaining the irradiated predetermined area substantially unchanged and while maintaining the angle between the axis of the X-ray, neutron or electron beam relative to the tangential plane of the predetermined area substantially unchanged, forming an image of the diffraction ray from the sample during the rotation of the sample through every predetermined angle using an imaging plate, reading a data of the image formed on the imaging plate to obtain an output data for each rotation of the sample through the predetermined angle, and processing the output data to obtain desired analysis information.
摘要:
A superconducting junction element has a lower electrode formed by a superconductor layer, a barrier layer provided on a portion of a surface of the lower electrode, an upper electrode formed by a superconductor and covering the barrier layer, and a superconducting junction formed by the lower electrode, the barrier layer and the upper electrode. A critical current density of the superconducting junction is controlled based on an area of the lower electrode.
摘要:
In a superconducting random access memory according to this invention, drive lines such as a word line and a bit line, and a sense line for accessing a memory cell array are each divided into a plurality of blocks and an in-block signal propagation circuit having a level-logic drive circuit and sense circuit each with high load drive capability is used for signal propagation in each of the blocks. Further, for long-distance signal propagation between the blocks, superconducting passive transmission lines formed by single flux quantum (SFQ) devices and capable of high-speed operation are used. As a result, the high-speed operation as a whole is enabled. It is possible to additionally use splitters or confluence buffers and latch circuits and, further, a binary tree structure may be adopted.
摘要:
A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the second electrode layer (6) is greater than the width of the first electrode layer (5). The first electrode layer (5) and the second electrode layer (6) touch in part, and are separated via a first insulation layer (7) in remaining part. Because the ramp-edge junction includes the first electrode layer (5) and the second electrode layer (6), the inductance of the ramp-edge junction can be reduced with the critical current density Jc being kept at a high level.
摘要:
A first Josephson junction in a Single Flux Quantum circuit (SFQ circuit) and a second Josephson junction in an interface circuit (latch driver circuit) are formed with junction materials different from each other, and the junction materials are selected so that the hysteresis of the first Josephson junction in a current-voltage characteristic is smaller than the hysteresis of the second Josephson junction in a current-voltage characteristic.
摘要:
A first Josephson junction in a Single Flux Quantum circuit (SFQ circuit) and a second Josephson junction in an interface circuit (latch driver circuit) are formed with junction materials different from each other, and the junction materials are selected so that the hysteresis of the first Josephson junction in a current-voltage characteristic is smaller than the hysteresis of the second Josephson junction in a current-voltage characteristic.
摘要:
There is provided a superconducting multi-stage sigma-delta modulator including a first superconducting sigma-delta modulator having a first integrator and a first comparator and outputting a sigma-delta modulated signal and a second superconducting sigma-delta modulator having a second integrator and a second comparator and outputting a sigma-delta modulated signal. The first integrator and the second integrator are magnetically coupled.
摘要:
To obtain a superconducting driver circuit which can obtain an output voltage of several millvolts or above, can use a DC power source as a driving power source, can form no capacitance between it and a ground plane, and has a small occupation area, the superconducting driver circuit is constructed by superconducting flux quantum interference devices (SQUIDs) each constructing a closed loop having as components two superconducting junctions and an inductor. The SQUIDs share the inductors and are connected in series in three or more stages.