公开(公告)号：US06299680B1

公开(公告)日：2001-10-09

申请号：US09462268

申请日：2000-01-06

申请人： Akio Koyama ,  Ryuichi Hirano

发明人： Akio Koyama ,  Ryuichi Hirano

IPC分类号： C30B2948

CPC分类号： C30B11/00 ,  C30B29/48

摘要： An object of the present invention is to reduce the etch pit density (EPD) and the full-width-half-maximum (FWHM) value of the double crystal X-ray rocking curve, and to provide a CdTe crystal or a CdZnTe crystal which does not include deposits having Cd or Te and the process for producing the same. After a CdTe crystal or a CdZnTe crystal was grown, while the temperature of the crystal is from 700 to 1050° C., the Cd pressure is adjusted so as to keep the stoichiometry of the crystal at the above temperature. The crystal is left for time t which is determined so that each of a diameter L(r) of the crystal and a length L(z) thereof satisfies the following equation 1: {L(r),(L(z))}/2

摘要翻译： 本发明的目的是减少双晶X射线摇摆曲线的蚀刻坑密度（EPD）和全宽半最大值（FWHM）值，并提供CdTe晶体或CdZnTe晶体，其中 不包括具有Cd或Te的沉积物及其制备方法。 在CdTe晶体或CdZnTe晶体生长之后，当晶体的温度为700至1050℃时，调节Cd压力以将晶体的化学计量保持在上述温度。 对于晶体留下的晶体，其被确定为使得晶体的直径L（r）和长度L（z）分别满足以下等式1：然后，当晶体冷却时，晶体的温度 在晶体的温度和Cd储层的温度满足以下等式2的范围内降低：

公开(公告)号：US08513775B2

公开(公告)日：2013-08-20

申请号：US13131614

申请日：2010-09-30

申请人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurita ,  Ryuichi Hirano

发明人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurita ,  Ryuichi Hirano

IPC分类号： H01L29/22 ,  H01L31/0328 ,  H01L31/0296 ,  H01L31/00 ,  H01L31/0336

CPC分类号： C30B29/48 ,  C30B25/186 ,  H01L21/02024 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/463

摘要： Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth.A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

摘要翻译： 提供了一种用于外延生长的CdTe基半导体衬底，其能够在不促使衬底用户在外延生长之前实施蚀刻处理的同时生长良好质量的外延晶体。 当通过原子力显微镜观察基板的表面时，在10mum×10um的观察范围内未观察到具有1nm以上的深度的线性抛光损伤的轨迹的CdTe系半导体基板， 在荧光灯下目视观察基板的表面时，不会观察到橙皮缺陷，可以生长优质的外延晶体。

公开(公告)号：US08120649B2

公开(公告)日：2012-02-21

申请号：US11593216

申请日：2006-11-06

申请人： Yuichiro Hashimoto ,  Hideyuki Kawanabe ,  Ryuichi Hirano ,  Tetsuya Shirota

发明人： Yuichiro Hashimoto ,  Hideyuki Kawanabe ,  Ryuichi Hirano ,  Tetsuya Shirota

IPC分类号： H04N9/47

CPC分类号： G02B21/365

摘要： A microscope system having a selectively mountable optical element, comprises: a first noncontact type storage medium, being equipped in the optical element, for enabling a noncontact readout of information externally; and a first readout unit for reading information non-contactingly from the first noncontact type storage medium, wherein the first noncontact type storage medium stores information related to the optical element.

摘要翻译： 一种具有可选择安装的光学元件的显微镜系统，包括：第一非接触型存储介质，其被配备在所述光学元件中，用于使外部信息不接触地读出; 以及第一读取单元，用于从第一非接触式存储介质非接触地读取信息，其中第一非接触式存储介质存储与光学元件有关的信息。

公开(公告)号：US20110233729A1

公开(公告)日：2011-09-29

申请号：US13131614

申请日：2010-09-30

申请人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurta ,  Ryuichi Hirano

发明人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurta ,  Ryuichi Hirano

IPC分类号： H01L29/22 ,  B65D85/00

CPC分类号： C30B29/48 ,  C30B25/186 ,  H01L21/02024 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/463

摘要： Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth.A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

摘要翻译： 提供了一种用于外延生长的CdTe基半导体衬底，其能够在不促使衬底用户在外延生长之前实施蚀刻处理的同时生长良好质量的外延晶体。 当通过原子力显微镜观察基板的表面时，在10μm×10μm的观察范围内未观察到具有1nm以上的深度的线性抛光损伤的轨迹的CdTe系半导体基板， 在荧光灯下目视观察基板的表面时，不会观察到橙皮缺陷，可以生长优质的外延晶体。

公开(公告)号：US07745854B2

公开(公告)日：2010-06-29

申请号：US12223453

申请日：2007-02-02

申请人： Hideki Kurita ,  Ryuichi Hirano

发明人： Hideki Kurita ,  Ryuichi Hirano

IPC分类号： H01L29/94 ,  C30B23/00 ,  C30B28/12

CPC分类号： C30B25/18 ,  C30B29/40 ,  Y10T428/24479

摘要： It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semiconductor layer.In a substrate for growing a compound semiconductor, in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is set to be less than 35°, and the compound semiconductor layer is epitaxially grown on the substrate.

摘要翻译： 提供一种用于生长半导体的衬底，其在外延生长化合物半导体层，特别是Al基化合物半导体层的情况下，有效抑制类型与山丘缺陷不同的表面缺陷的发生。 在用于生长化合物半导体的衬底中，其中以相对于（100）面倾斜预定偏离角的晶体表面是主平面，由通过将（100）面的法向量投影获得的矢量的方向 （100）面上的主平面和[0-11]方向的一个方向，[01-1]方向，[011]方向和[0-1-1]方向设定为小于35 °，并且在衬底上外延生长化合物半导体层。

公开(公告)号：US20080102022A1

公开(公告)日：2008-05-01

申请号：US11667676

申请日：2005-11-16

申请人： Atsutoshi Arakawa ,  Ryuichi Hirano

发明人： Atsutoshi Arakawa ,  Ryuichi Hirano

IPC分类号： C01B19/00

CPC分类号： C30B29/48 ,  C30B11/00 ,  C30B23/02 ,  H01L31/09 ,  H01L31/1832 ,  Y10S977/824

摘要： It is to define the resistivity and the contained amount of impurities of a CdTe system compound semiconductor single crystal and to provide a CdTe system compound semiconductor single crystal which is useful as a substrate for optical devices such as an infrared sensor and the like. In a CdTe system compound semiconductor single crystal for an optical device, a Group 1 (1A) element is included in a range of 5×1014 to 6×1015cm−3 in the crystal, a total amount of a Group 13 (3B) element and a Group 17 (7B) element included in the crystal is less than 2×1015cm−3 and less than a total amount of the Group 1 (1A) element, and resistivity of the crystal is in a range of 10 to 104 Ωcm.

摘要翻译： 为了限定CdTe系化合物半导体单晶的电阻率和含有量的杂质，提供可用作红外线传感器等的光学元件的基板的CdTe系化合物半导体单晶。 在用于光学器件的CdTe系统化合物半导体单晶中，组1（1A）元素包括在5×10 14至6×10 15 cm -3的范围内， -3，晶体中包含的第13族（3B）元素和第17（7B）族元素的总量小于2×10 15 cm > -3以下且小于第1族（1A）元素的总量，并且该结晶的电阻率在10〜104Ω·m范围内。

公开(公告)号：US20070190757A1

公开(公告)日：2007-08-16

申请号：US10589733

申请日：2005-02-15

申请人： Masashi Nakamura ,  Suguru Oota ,  Ryuichi Hirano

发明人： Masashi Nakamura ,  Suguru Oota ,  Ryuichi Hirano

IPC分类号： H01L21/20

CPC分类号： H01L21/02658 ,  C30B23/002 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02631

摘要： It is to provide a vapor phase growth method in which an epitaxial layer consisting of a compound semiconductor such as InAlAs, can be grown, with superior reproducibility, on a semiconductor substrate such as Fe-doped InP. In vapor phase growth method for growing an epitaxial layer on a semiconductor substrate, a resistivity of the semiconductor substrate at a room temperature is previously measured, a set temperature of the substrate is controlled depending on the resistivity at the room temperature such that a surface temperature of the substrate is a desired temperature regardless of the resistivity of the semiconductor substrate, and the epitaxial layer is grown.

摘要翻译： 提供一种气相生长方法，其中可以在诸如Fe掺杂InP的半导体衬底上以优异的再现性生长由诸如InAlAs的化合物半导体组成的外延层。 在用于在半导体衬底上生长外延层的气相生长方法中，预先测量半导体衬底在室温下的电阻率，根据室温下的电阻率来控制衬底的设定温度，使得表面温度 与半导体衬底的电阻率无关，是衬底的所需温度，并且生长外延层。

公开(公告)号：US08615448B1

公开(公告)日：2013-12-24

申请号：US13172444

申请日：2011-06-29

申请人： Jennifer R. O'Twomney ,  Maren Marie Costa ,  Aaron M. Donsbach ,  Marina A. Pai ,  Sean M. Scott ,  Devraj Varadhan ,  Anoop Balakrishnan ,  Ryuichi Hirano

发明人： Jennifer R. O'Twomney ,  Maren Marie Costa ,  Aaron M. Donsbach ,  Marina A. Pai ,  Sean M. Scott ,  Devraj Varadhan ,  Anoop Balakrishnan ,  Ryuichi Hirano

IPC分类号： G06Q30/00

CPC分类号： G06Q30/0641 ,  G06Q30/0631

摘要： Disclosed are various embodiments relating to generating profile-based item suggestions from a stylist when purchasing items through an electronic commerce system. A network page is rendered in a client computing device comprising an input field to input descriptions of items the user wishes to purchase and a stylist profile selection mechanism to select a suggested stylist profile. The user inputs descriptions of items and selects the suggested stylist profile. An item suggestions request comprising the item descriptions and the selected stylist profile is sent from the client computing device to a server computing device.

摘要翻译： 公开了关于在通过电子商务系统购买物品时从设计师生成基于轮廓的物品建议的各种实施例。 网络页面呈现在客户端计算设备中，该客户端计算设备包括输入字段以输入用户希望购买的项目的描述，以及设计者简档选择机构来选择建议的造型师简档。 用户输入项目描述并选择建议的造型师资料。 包括项目描述和所选择的造型师简档的项目建议请求从客户端计算设备发送到服务器计算设备。

公开(公告)号：US07875957B2

公开(公告)日：2011-01-25

申请号：US12438636

申请日：2007-08-17

申请人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

发明人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

IPC分类号： C01B19/00 ,  C01B19/04 ,  H01L29/22

CPC分类号： C30B29/48 ,  C30B11/00 ,  C30B33/00

摘要： Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%.

摘要翻译： 提供一种用于外延生长的半导体衬底，其在进行HgCdTe膜的外延生长的阶段中不需要任何蚀刻处理作为预处理。 用于HgCdTe膜的外延生长的CdTe系化合物半导体衬底在镜面抛光处理之后的预定时间（例如10小时）内容纳在惰性气体气氛中，从而调节 通过XPS测量获得的基板表面上的Te的总量不大于30％。

公开(公告)号：US20090269271A1

公开(公告)日：2009-10-29

申请号：US12438636

申请日：2007-08-17

申请人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

发明人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

IPC分类号： C01B19/04

CPC分类号： C30B29/48 ,  C30B11/00 ,  C30B33/00

摘要： Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%.

摘要翻译： 提供一种用于外延生长的半导体衬底，其在进行HgCdTe膜的外延生长的阶段中不需要任何蚀刻处理作为预处理。 用于HgCdTe膜的外延生长的CdTe系化合物半导体衬底在镜面抛光处理之后的预定时间（例如10小时）内容纳在惰性气体气氛中，从而调节 通过XPS测量获得的基板表面上的Te的总量不大于30％。