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11.发明授权Method and apparatus for utilizing integrated metrology data as feed-forward data 有权利用综合计量数据作为前馈数据的方法和装置公开(公告)号：US06708075B2
公开(公告)日：2004-03-16
申请号：US09992447
申请日：2001-11-16
IPC分类号： G06F1900
摘要： A method and an apparatus for performing feed-forward correction during semiconductor wafer manufacturing. A first process on a semiconductor wafer is performed. Integrated metrology data related to the first process of the semiconductor wafer is acquired. An integrated metrology feed-forward process is performed based upon the integrated metrology data, the integrated metrology feed-forward process comprising identifying at least one error on the semiconductor wafer based upon the integrated metrology data related to the first process of the semiconductor wafer and performing an adjustment process to a second process to be performed on the wafer to compensate for the error. The second process on the semiconductor wafer is performed based upon the adjustment process.
摘要翻译： 一种用于在半导体晶片制造期间执行前馈校正的方法和装置。 执行半导体晶片上的第一工序。 获得与半导体晶片的第一工艺有关的集成度量数据。 基于综合度量学数据进行综合计量学前馈过程，所述综合度量学前馈过程包括基于与半导体晶片的第一工艺相关的集成测量数据识别半导体晶片上的至少一个误差并执行 对在晶片上执行的补偿误差的第二处理的调整处理。 基于调整处理进行半导体晶片上的第二工序。
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公开(公告)号：US08615314B1
公开(公告)日：2013-12-24
申请号：US10932989
申请日：2004-09-02
IPC分类号： G05B13/02
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/45031 , Y02P90/22
摘要： A method, apparatus and a system, for performing a process control using analysis of an upstream process is provided. The method comprises performing a first process on a workpiece and performing a qualitative analysis upon the workpiece relating to the first process, the qualitative analysis comprises analyzing at least one metrology measurement relating to the first process and a workpiece feature to evaluate a characteristic of the workpiece. The method further comprises selecting a process control parameter for performing a second process upon the workpiece based upon the qualitative analysis.
摘要翻译： 提供了一种使用上游处理的分析进行处理控制的方法，装置和系统。 该方法包括对工件执行第一过程并对与第一过程相关的工件执行定性分析，定性分析包括分析与第一过程有关的至少一个度量测量和工件特征以评估工件的特性 。 该方法还包括基于定性分析来选择用于对工件执行第二处理的过程控制参数。
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13.发明授权Dynamic process state adjustment of a processing tool to reduce non-uniformity 有权动态过程状态调整的加工工具减少不均匀性公开(公告)号：US06751518B1
公开(公告)日：2004-06-15
申请号：US10134244
申请日：2002-04-29
IPC分类号： G06F1900
CPC分类号： H01L21/67276
摘要： A method and an apparatus for reducing process non-uniformity across a processed semiconductor wafers. A first semiconductor wafer is processed. A process non-uniformity associated with the first processed semiconductor wafer is identified. A feedback correction in response to the process non-uniformity during processing of a second semiconductor wafer is performed and/or a feed-forward compensation is performed in response to the process non-uniformity during a subsequent process performed across the first semiconductor wafer is performed.
摘要翻译： 一种用于减少经处理的半导体晶片的工艺不均匀性的方法和装置。 处理第一半导体晶片。 识别与第一处理的半导体晶片相关联的工艺不均匀。 执行响应于处理第二半导体晶片期间的处理不均匀性的反馈校正和/或响应于在第一半导体晶片执行的后续处理期间的处理不均匀性执行前馈补偿 。
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14.发明授权Method and apparatus for determining a sampling plan based on process and equipment state information 有权基于过程和设备状态信息确定采样计划的方法和装置公开(公告)号：US06821792B1
公开(公告)日：2004-11-23
申请号：US10023119
申请日：2001-12-18
IPC分类号： H01L21302
CPC分类号： H01L22/20 , G05B2219/37448 , G05B2219/45031
摘要： A processing line includes a process tool, a metrology tool, a tool state monitor, and a sampling controller. The processing tool is configured to process workpieces. The metrology tool is configured to measure an output characteristic of selected workpieces in accordance with a sampling plan. The tool state monitor is configured to observe at least one tool state variable value during the processing of a selected workpiece in the processing tool. The sampling controller is configured to receive the observed tool state variable value and determine the sampling plan for the metrology tool based on the observed tool state variable value. A method for processing workpieces includes processing a plurality of workpieces in a processing tool. A characteristic of selected workpieces is measured in accordance with a sampling plan. At least one tool state variable value is observed during the processing of a particular workpiece in the processing tool. The sampling plan is determined based on the observed tool state variable value.
摘要翻译： 处理线包括处理工具，计量工具，工具状态监视器和采样控制器。 处理工具被配置为处理工件。 计量工具被配置为根据抽样计划来测量所选择的工件的输出特性。 工具状态监视器被配置为在处理工具中的所选择的工件的处理期间观察至少一个刀具状态变量值。 采样控制器被配置为接收观察到的工具状态变量值，并且基于所观测的工具状态变量值来确定测量工具的采样计划。 一种用于处理工件的方法包括在处理工具中处理多个工件。 所选工件的特性根据抽样计划进行测量。 在处理工具中的特定工件的处理期间观察到至少一个刀具状态变量值。 采样计划是根据观察到的工具状态变量值确定的。
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15.发明授权Method and apparatus for determining a sampling plan based on process and equipment fingerprinting 有权基于过程和设备指纹识别取样计划的方法和装置公开(公告)号：US06650955B1
公开(公告)日：2003-11-18
申请号：US10024675
申请日：2001-12-18
IPC分类号： G06F1900
CPC分类号： G05B19/41865 , G05B2219/31459 , G05B2219/31485 , G05B2219/45031 , Y02P90/20 , Y02P90/86
摘要： A processing line includes a processing tool, a metrology tool, a processing monitor, and a sampling controller. The processing tool is configured to process workpieces. The metrology tool is configured to measure an output characteristic of selected workpieces in accordance with a sampling plan. The processing monitor is configured to monitor the processing of at least one workpiece in the processing tool to generate a fingerprint and determine a processing metric based on the fingerprint. The sampling controller is configured to receive the processing metric and determine the sampling plan for the metrology tool based on the processing metric. A method for processing workpieces includes processing a plurality of workpieces in a processing tool. A characteristic of selected workpieces is measured in accordance with a sampling plan. The processing of at least one workpiece in the processing tool is monitored to generate a fingerprint. A processing metric is determined based on the fingerprint. The sampling plan is determined based on the processing metric.
摘要翻译： 处理线包括处理工具，计量工具，处理监视器和采样控制器。 处理工具被配置为处理工件。 计量工具被配置为根据抽样计划来测量所选择的工件的输出特性。 处理监视器被配置为监视处理工具中的至少一个工件的处理以生成指纹并且基于指纹来确定处理度量。 采样控制器被配置为基于处理度量来接收处理度量并确定计量工具的采样计划。 一种用于处理工件的方法包括在处理工具中处理多个工件。 所选工件的特性根据抽样计划进行测量。 对处理工具中的至少一个工件进行处理以产生指纹。 基于指纹确定处理度量。 采样计划是根据处理度量确定的。
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16.发明授权Method and apparatus for determining control actions incorporating defectivity effects 有权用于确定包含缺陷效应的控制动作的方法和装置公开(公告)号：US06745086B1
公开(公告)日：2004-06-01
申请号：US10114785
申请日：2002-04-03
IPC分类号： G06F1300
CPC分类号： H01L22/20
摘要： A method includes processing workpieces in accordance with an operating recipe. Metrology data associated with at least one of the workpieces is received. A proposed control action is generated based on the metrology data. A defectivity metric is generated based on the proposed control action. The proposed control action is modified based on the defectivity metric. A manufacturing system includes a process tool, a metrology tool, and a process controller. The process tool is configured to process workpieces in accordance with an operating recipe. The metrology tool is configured to provide metrology data associated with at least one of the workpieces. The process controller is configured to generate a proposed control action based on the metrology data, generate a defectivity metric based on the proposed control action, and modify the proposed control action based on the defectivity metric.
摘要翻译： 一种方法包括根据操作配方处理工件。 接收与至少一个工件相关联的计量数据。 基于测量数据生成提出的控制动作。 基于所提出的控制动作产生缺陷度量。 所提出的控制动作根据缺陷度量进行修改。 制造系统包括处理工具，计量工具和过程控制器。 过程工具被配置为根据操作配方处理工件。 计量工具被配置为提供与至少一个工件相关联的度量数据。 过程控制器被配置为基于测量数据生成提出的控制动作，基于所提出的控制动作生成缺陷度量，并且基于缺陷度量度修改所提出的控制动作。
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公开(公告)号：US07120514B1
公开(公告)日：2006-10-10
申请号：US09815446
申请日：2001-03-22
CPC分类号： G03F9/7034 , G03F7/70633
摘要： The present invention provides for a method and an apparatus for performing field-to-field compensation during semiconductor manufacturing. At least one semiconductor device is processed. Metrology data is collected from the processed semiconductor device. A field-to-field metrology analysis is performed based upon the metrology data. Residual-error analysis is performed based upon the field-to-field analysis.
摘要翻译： 本发明提供一种用于在半导体制造期间执行场到场补偿的方法和装置。 至少一个半导体器件被处理。 从被处理的半导体器件收集测量数据。 基于测量数据进行现场测量分析。 基于现场分析进行残差分析。
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18.发明授权Automated method of controlling photoresist develop time to control critical dimensions, and system for accomplishing same 有权控制光刻胶的自动化方法开发时间来控制关键尺寸，并实现相同的系统公开(公告)号：US06569692B1
公开(公告)日：2003-05-27
申请号：US09776087
申请日：2001-02-02
IPC分类号： G01R3126
CPC分类号： G03F7/0035 , G03F7/3021 , Y10S438/942
摘要： The present invention is directed to an automated method of controlling photoresist develop time to control critical dimensions, and a system for accomplishing same. In one embodiment, the method comprises measuring a critical dimension of each of a plurality of features formed in a layer of photoresist, providing the measured critical dimensions of the features, in the layer of photoresist to a controller that determines, based upon the measured critical dimensions, a duration of a photoresist develop process to be performed on a layer of photoresist formed above a subsequently processed wafer, and performing a photoresist develop process on the subsequently processed wafer for the determined duration.
摘要翻译： 本发明涉及控制光刻胶显影时间以控制关键尺寸的自动化方法，以及用于实现其的系统。 在一个实施例中，该方法包括测量在光致抗蚀剂层中形成的多个特征中的每一个的临界尺寸，将光刻胶层中的特征的测量临界尺寸提供给控制器，所述控制器基于所测量的临界值 尺寸，光致抗蚀剂的持续时间将在随后处理的晶片上形成的光致抗蚀剂层上进行，并对所确定的持续时间在随后处理的晶片上进行光刻胶显影处理。
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19.发明授权Methods of characterizing device performance based upon the duration of an endpointed photoresist develop process, and system for accomplishing same 失效基于端点光致抗蚀剂显影工艺的持续时间来表征器件性能的方法以及用于实现其的系统公开(公告)号：US06664013B1
公开(公告)日：2003-12-16
申请号：US10045536
申请日：2001-11-07
IPC分类号： G03F720
CPC分类号： G03F7/30 , G03F7/3028
摘要： In one illustrative embodiment, the method comprises initiating a develop process on a layer of photoresist formed above a wafer, indicating an endpoint of the develop process, determining a duration of the endpoint develop process, and determining if the determined duration of the develop process is not within a preselected range. In another aspect, the present invention is directed to a system that comprises a develop station for performing a develop process on a layer of photoresist formed above a wafer, a develop endpoint detector for indicating an endpoint of the develop process, and a controller for determining if a duration of the develop process is not within a preselected range.
摘要翻译： 在一个说明性实施例中，该方法包括在晶片上形成的光致抗蚀剂层上开发显影过程，指示显影过程的终点，确定终点显影过程的持续时间，以及确定所确定的显影过程持续时间是否为 不在预选范围内。 在另一方面，本发明涉及一种系统，其包括用于在晶片上形成的光致抗蚀剂层上进行显影处理的显影台，用于指示显影过程的端点的显影端点检测器，以及用于确定 如果开发过程的持续时间不在预选范围内。
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公开(公告)号：US06778873B1
公开(公告)日：2004-08-17
申请号：US10210640
申请日：2002-07-31
申请人： Jin Wang , Elfido Coss, Jr. , Brian K. Cusson , Alexander J. Pasadyn , Michael L. Miller , Naomi M. Jenkins , Christopher A. Bode
发明人： Jin Wang , Elfido Coss, Jr. , Brian K. Cusson , Alexander J. Pasadyn , Michael L. Miller , Naomi M. Jenkins , Christopher A. Bode
IPC分类号： G06F1900
CPC分类号： G05B19/4184 , G05B23/0281 , G05B2219/31357 , G05B2219/31363 , G05B2219/32201 , Y02P90/14 , Y02P90/22
摘要： A method and apparatus is provided for identifying a cause of a fault based on controller output. The method comprises processing at least one workpiece under a direction of the controller and detecting a fault associated with the processing of the at least one workpiece. The method further includes determining a plurality of possible causes of the detected fault, identifying a more likely possible cause out of the plurality of possible causes, providing fault information associated with the identified more likely possible cause to the controller. The method further includes providing fault information associated with the identified more likely possible cause to the controller. The method further comprises adjusting the processing of one or more workpieces to be processed next based on the fault information provided to the controller. The method further includes generating prediction data associated with processing of the next workpieces, and comparing the prediction data to processing data associated with the processing of the next workpieces to identify a possible cause of the fault.
摘要翻译： 提供了一种基于控制器输出来识别故障原因的方法和装置。 该方法包括在控制器的方向上处理至少一个工件，并检测与至少一个工件的处理相关的故障。 该方法还包括确定检测到的故障的多个可能的原因，从多个可能的原因中识别更可能的可能原因，将与所识别的更可能的可能原因相关联的故障信息提供给控制器。 该方法还包括向控制器提供与所识别的更可能的可能原因相关联的故障信息。 该方法还包括基于提供给控制器的故障信息来调整接下来要处理的一个或多个待处理工件的处理。 该方法还包括生成与下一个工件的处理相关联的预测数据，以及将预测数据与与下一个工件的处理相关联的处理数据进行比较，以识别故障的可能原因。
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