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    Connection to first metal layer in thin film transistor process
    11.
    发明授权
    Connection to first metal layer in thin film transistor process 有权
    在薄膜晶体管工艺中连接到第一金属层

    公开(公告)号：US08748320B2

    公开(公告)日：2014-06-10

    申请号：US13629547

    申请日：2012-09-27

    Applicant: Apple Inc.

    Inventor： Ming-Chin Hung ,  Young Bae Park ,  Chun-Yao Huang ,  Shih Chang Chang ,  John Z. Zhong

    IPC: H01L21/311

    CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606

    Abstract: A method of connecting to a first metal layer in a semiconductor flow process. Disclosed embodiments connect to the first metal layer by etching a first portion of a viahole through an etch stop layer and a gate insulation layer to reach a first metal layer, depositing a second metal layer such that the second metal layer contacts the first metal layer within the viahole, and etching a second portion of the viahole through a first passivation layer and an organic layer to reach the second metal layer.

    Abstract translation: 一种在半导体流程中连接到第一金属层的方法。 公开的实施例通过蚀刻通孔的第一部分通过蚀刻停止层和栅极绝缘层连接到第一金属层，以到达第一金属层，沉积第二金属层，使得第二金属层与第一金属层接触， 所述通孔，并且通过第一钝化层和有机层蚀刻所述通孔的第二部分以到达所述第二金属层。

    Low-Flicker Liquid Crystal Display
    13.
    发明申请
    Low-Flicker Liquid Crystal Display 有权
    低闪烁液晶显示器

    公开(公告)号：US20160209711A1

    公开(公告)日：2016-07-21

    申请号：US14702556

    申请日：2015-05-01

    Applicant: Apple Inc.

    Inventor： Zhibing Ge ,  Chaohao Wang ,  Cheng Chen ,  Kyung Wook Kim ,  Ming-Chin Hung ,  Paolo Sacchetto ,  Shih Chang Chang ,  Shih-Chyuan Fan Jiang ,  Shang-Chih Lin

    IPC: G02F1/1343 ,  G02F1/1368 ,  G02F1/1335 ,  G06F3/147

    CPC classification number: G02F1/134309 ,  G02F1/133514 ,  G02F1/1343 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/134372 ,  G06F3/147

    Abstract: A display may have upper and lower display layers. A layer of liquid crystal material may be interposed between the upper and lower display layers. The display layers may have substrates. A thin-film transistor layer may have a layer of thin-film transistor structures on a substrate such as a clear glass layer. A planarization layer may be formed on the thin-film transistor structures. A transparent conductive layer may be formed on the planarization layer The display may have a dielectric layer on the transparent conductive layer. Pixels may be formed in the display layers. The pixels may include pixel electrodes having fingers. The fingers may be formed on the dielectric layer. Trenches in the dielectric layer may be formed between the fingers. The trenches may extend to the transparent conductive layer or may be formed only partway into the dielectric layer.

    Abstract translation: 显示器可以具有上和下显示层。 可以在上显示层和下显示层之间插入一层液晶材料。 显示层可以具有基底。 薄膜晶体管层可以在诸如透明玻璃层的基板上具有薄膜晶体管结构层。 平坦化层可以形成在薄膜晶体管结构上。 透明导电层可以形成在平坦化层上。显示器可以在透明导电层上具有介电层。 可以在显示层中形成像素。 像素可以包括具有指状物的像素电极。 指状物可以形成在电介质层上。 电介质层中的沟槽可以形成在手指之间。 沟槽可以延伸到透明导电层，或者可以仅形成在介电层的中间部分。

    Gate insulator loss free etch-stop oxide thin film transistor
    14.
    发明授权
    Gate insulator loss free etch-stop oxide thin film transistor 有权
    栅极绝缘体无损蚀刻 - 停止氧化物薄膜晶体管

    公开(公告)号：US08823003B2

    公开(公告)日：2014-09-02

    申请号：US13629537

    申请日：2012-09-27

    Applicant: Apple Inc.

    Inventor： Ming-Chin Hung ,  Kyung Wook Kim ,  Young Bae Park ,  Hao-Lin Chiu ,  Chun-Yao Huang ,  Shih Chang Chang

    IPC: H01L29/10 ,  H01L29/786

    CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/786 ,  H01L29/7869

    Abstract: A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.

    Abstract translation: 提供了制造薄膜晶体管（TFT）的方法。 该方法包括在覆盖栅电极的栅极绝缘体上形成半导体层，以及在半导体层上沉积绝缘体层，以及蚀刻绝缘体层以形成图案化蚀刻停止件，而不会失去栅极绝缘体。 该方法还包括在半导体层和图案化蚀刻停止物上形成源电极和漏电极。 该方法还包括：除了源电极和漏电极之外的半导体层的一部分，使得半导体层的剩余部分在源电极和栅电极的第一重叠区域和第二重叠区域中覆盖栅极绝缘体 的漏电极和栅电极。

    Electronic Device with Variable Refresh Rate Display Driver Circuitry
    15.
    发明申请
    Electronic Device with Variable Refresh Rate Display Driver Circuitry 审中-公开
    具有可变刷新率显示驱动电路的电子设备

    公开(公告)号：US20140225817A1

    公开(公告)日：2014-08-14

    申请号：US14150579

    申请日：2014-01-08

    Applicant: Apple Inc.

    Inventor： Chun-Yao Huang ,  John Z. Zhong ,  Kyung-Wook Kim ,  Ming-Chin Hung ,  Shih-Chang Chang

    IPC: G09G3/36

    CPC classification number: G09G3/3677 ,  G09G2310/0286 ,  G09G2330/021 ,  G11C19/28

    Abstract: A display may have an array of display pixels. The array may have rows. Each row of the display pixels may receive gate lines signals on a respective gate line. Gate driver circuitry may be used to drive gate line signals onto the gate lines. Each gate line may be coupled to a logic gate in the gate driver circuitry. The logic gates may each be coupled to a respective latch. A termination block in the gate driver circuitry may have a termination block latch and a termination block logic gate. Signal lines may be used to distribute clock signals from display driver circuitry to the logic gates. Respective signal lines may also be used to distribute a pixel charging initiation signal to a latch in the first row of the array and a pixel charging termination signal to the termination block latch.

    Abstract translation: 显示器可以具有显示像素阵列。 数组可能有行。 显示像素的每行可以在相应的栅极线上接收栅极线信号。 栅极驱动器电路可用于将栅极线信号驱动到栅极线上。 每个栅极线可以耦合到栅极驱动器电路中的逻辑门。 逻辑门可以各自耦合到相应的锁存器。 栅极驱动器电路中的端接块可以具有端接块锁存器和终端块逻​​辑门。 信号线可用于将显示驱动器电路的时钟信号分配给逻辑门。 各个信号线也可以用于将像素充电起始信号分配给阵列的第一行中的锁存器，并将像素充电终止信号分配给终端块锁存器。

    Connection to First Metal Layer in Thin Film Transistor Process
    16.
    发明申请
    Connection to First Metal Layer in Thin Film Transistor Process 有权
    连接薄膜晶体管工艺中的第一金属层

    公开(公告)号：US20140084292A1

    公开(公告)日：2014-03-27

    申请号：US13629547

    申请日：2012-09-27

    Applicant: APPLE INC.

    Inventor： Ming-Chin Hung ,  Young Bae Park ,  Chun-Yao Huang ,  Shih Chang Chang ,  John Z. Zhong

    IPC: H01L29/786 ,  H01L21/20

    CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606

    Abstract: A method of connecting to a first metal layer in a semiconductor flow process. Disclosed embodiments connect to the first metal layer by etching a first portion of a viahole through an etch stop layer and a gate insulation layer to reach a first metal layer, depositing a second metal layer such that the second metal layer contacts the first metal layer within the viahole, and etching a second portion of the viahole through a first passivation layer and an organic layer to reach the second metal layer.

    Abstract translation: 一种在半导体流程中连接到第一金属层的方法。 公开的实施例通过蚀刻通孔的第一部分通过蚀刻停止层和栅极绝缘层连接到第一金属层，以到达第一金属层，沉积第二金属层，使得第二金属层与第一金属层接触， 所述通孔，并且通过第一钝化层和有机层蚀刻所述通孔的第二部分以到达所述第二金属层。

    Back Channel Etch Metal-Oxide Thin Film Transistor and Process
    17.
    发明申请
    Back Channel Etch Metal-Oxide Thin Film Transistor and Process 有权
    背沟道蚀刻金属氧化物薄膜晶体管和工艺

    公开(公告)号：US20130337596A1

    公开(公告)日：2013-12-19

    申请号：US13913373

    申请日：2013-06-07

    Applicant: Apple Inc.

    Inventor： Ming-Chin Hung ,  Shih Chang Chang ,  Vasudha Gupta ,  Young Bae Park

    IPC: H01L51/56

    CPC classification number: H01L51/56 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L27/3276 ,  H01L2227/323

    Abstract: A method is provided for fabricating an organic light emitting diode (OLED) display. The method includes forming a thin film transistor (TFT) substrate including a first metal layer and a second metal layer. The method also includes depositing a first passivation layer over the second metal layer, and forming a third metal layer over a channel region and a storage capacitor region. The third metal layer is configured to connect to a first portion of the second metal layer that is configured to connect to the first metal layer in a first through-hole through a gate insulator and the first passivation layer. The method further includes depositing a second passivation layer over the third metal layer, and forming an anode layer over the second passivation layer. The anode is configured to connect to a second portion of the third metal layer that is configured to connect to the second metal layer in a second through-hole of the first passivation layer and the second passivation layer.

    Abstract translation: 提供了一种用于制造有机发光二极管（OLED）显示器的方法。 该方法包括形成包括第一金属层和第二金属层的薄膜晶体管（TFT）基板。 该方法还包括在第二金属层上沉积第一钝化层，以及在沟道区域和存储电容器区域上形成第三金属层。 第三金属层被配置为连接到第二金属层的第一部分，其被构造成通过栅极绝缘体和第一钝化层在第一通孔中连接到第一金属层。 该方法还包括在第三金属层上沉积第二钝化层，以及在第二钝化层上形成阳极层。 阳极被配置为连接到第三金属层的第二部分，其被配置为在第一钝化层和第二钝化层的第二通孔中连接到第二金属层。

    Liquid crystal displays with oxide-based thin-film transistors
    20.
    发明授权
    Liquid crystal displays with oxide-based thin-film transistors 有权
    具有氧化物基薄膜晶体管的液晶显示器

    公开(公告)号：US09564478B2

    公开(公告)日：2017-02-07

    申请号：US14228070

    申请日：2014-03-27

    Applicant: Apple Inc.

    Inventor： Shih Chang Chang ,  Ming-Chin Hung ,  Cheng-Ho Yu ,  Ting-Kuo Chang ,  Abbas Jamshidi Roudbari ,  Shang-Chih Lin ,  Kyung-Wook Kim ,  Chun-Yao Huang ,  Szu-Hsien Lee ,  Yu-Cheng Chen ,  Hiroshi Osawa

    IPC: G02F1/136 ,  G02F1/1345 ,  H01L27/32 ,  H01L27/12 ,  G09G3/36 ,  G02F1/1368 ,  G09G3/32 ,  G02F1/1362

    CPC classification number: H01L27/3262 ,  G02F1/13454 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  G09G3/3225 ,  G09G3/3611 ,  G09G3/3677 ,  G09G2320/043 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Abstract translation: 电子设备可以包括在基板上具有显示像素阵列的显示器。 显示像素可以是液晶显示器中的有机发光二极管显示像素或显示像素。 在有机发光二极管显示器中，可以形成包括半导体氧化物薄膜晶体管，硅薄膜晶体管和电容器结构的混合薄膜晶体管结构。 电容器结构可以与半导体氧化物薄膜晶体管重叠。 有机发光二极管显示像素可以具有氧化物和硅晶体管的组合。 在液晶显示器中，显示驱动器电路可以包括硅薄膜晶体管电路，显示像素可以基于氧化物薄膜晶体管。 可以在形成硅晶体管栅极和氧化物晶体管栅极中使用单层或两层不同的栅极金属层。 硅晶体管可以具有与浮动栅极结构重叠的栅极。

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