High pressure and high temperature anneal chamber

    公开(公告)号:US11462417B2

    公开(公告)日:2022-10-04

    申请号:US16849604

    申请日:2020-04-15

    Abstract: Disclosed herein is an apparatus and method for annealing semiconductor substrates. In one example a temperature-controlled fluid circuit includes a condenser configured to fluidly connect to an internal volume of a processing chamber. The processing chamber has a body, the internal volume is within the body. The condenser is configured to condense a processing fluid into liquid phase. A source conduit includes a first terminal end that couples to a first port on the body of the processing chamber. The source conduit includes a second terminal end. The first terminal end couples to a gas panel. The gas panel is configured to provide a processing fluid into the internal volume of the processing chamber. A gas conduit includes a first end. The first end couples to the condenser and a second end. The second end is configured to couple to a second port on the body of the processing chamber.

    Drying process for high aspect ratio features

    公开(公告)号:US10777405B2

    公开(公告)日:2020-09-15

    申请号:US15268162

    申请日:2016-09-16

    Abstract: A method for processing a substrate is disclosed. The method includes delivering a solvent to a processing chamber and delivering a substrate to the processing chamber. The amount of solvent present in the processing chamber may be configured to submerse the substrate. Liquid CO2 may be delivered to the processing chamber and the liquid CO2 may be mixed with the solvent. Additional liquid CO2 may be delivered to the processing chamber in an amount greater than a volume of the processing chamber to displace the solvent. The liquid CO2 may be phase transitioned to supercritical CO2 in the processing chamber and the substrate may be dried by isothermally depressurizing the processing chamber and exhausting gaseous CO2 from the processing chamber.

    Condenser system for high pressure processing system

    公开(公告)号:US10685830B2

    公开(公告)日:2020-06-16

    申请号:US16183967

    申请日:2018-11-08

    Inventor: Jean Delmas

    Abstract: Embodiments described herein relate to a high pressure processing system with a condenser and methods for utilizing the same. The processing system includes a process chamber, a boiler, a condenser, and one or more heat exchangers. The boiler generates a fluid, such as a vapor or supercritical fluid, and delivers the fluid to the process chamber where a substrate is processed. After processing the substrate, the system is depressurized and the fluid is delivered to the condenser where the fluid is condensed.

    Substrate support and baffle apparatus

    公开(公告)号:US10573510B2

    公开(公告)日:2020-02-25

    申请号:US16039224

    申请日:2018-07-18

    Abstract: A substrate support apparatus is provided. The apparatus includes a circular base plate and one or more spacers disposed about a circumference of the base plate. The spacers may extend from a top surface of the base plate and a ring body may be coupled to the spacers. The ring body may be spaced from the base plate to define apertures between the base plate and the ring body. One or more support posts may be coupled to the base plate and extend therefrom. The support posts may be coupled to the base plate at positions radially inward from an inner surface of the ring body.

    Liquid lithium supply and regulation

    公开(公告)号:US11603306B2

    公开(公告)日:2023-03-14

    申请号:US17544358

    申请日:2021-12-07

    Abstract: Methods and systems for the production and delivery of lithium metal of high purity are provided herein. In one or more embodiments, a liquid lithium delivery system contains a liquid lithium delivery module fluidly coupled to a lithium refill container. The liquid lithium delivery module contains a lithium storage region operable to store liquid lithium and containing a fluid supply line fluidly coupling an outlet port of a liquid lithium storage tank, and a flow meter positioned downstream from the lithium storage region along the fluid supply line and operable to monitor the flow of the liquid lithium through the fluid supply line.

    High pressure and high temperature anneal chamber

    公开(公告)号:US11469113B2

    公开(公告)日:2022-10-11

    申请号:US16842605

    申请日:2020-04-07

    Abstract: Disclosed herein is an apparatus and method for annealing semiconductor substrates. In one example the method of annealing substrates in a processing chamber includes loading a plurality of substrates into an internal volume of the processing chamber. The method includes flowing a processing fluid through a gas conduit into the internal volume. The method further includes measuring a temperature of the gas conduit at one or more position utilizing one or more temperature sensors. The processing fluid in the gas conduit and the internal volume are maintained at a temperature above a condensation point of the processing fluid.

    Liquid lithium supply and regulation

    公开(公告)号:US11198604B2

    公开(公告)日:2021-12-14

    申请号:US16445327

    申请日:2019-06-19

    Abstract: Methods and systems for the production and delivery of lithium metal of high purity are provided. More particularly, methods and systems for lithium metal purification, delivery and deposition are provided. In at least one aspect, a liquid lithium delivery system is provided. The liquid lithium delivery system comprises a liquid lithium delivery module. The liquid lithium delivery system comprises a lithium storage region operable to store the liquid lithium, a pumping region operable to move liquid lithium through the lithium delivery, and a flow control region. The pumping region comprises an electromagnetic pump operable to move the liquid lithium using electromagnetism. The flow control region operable to control the flow of liquid lithium, comprising one or more valves operable to control the flow of the liquid lithium, wherein the pumping region is positioned downstream from the lithium storage region and upstream from the flow control region.

    High pressure and high temperature anneal chamber

    公开(公告)号:US10276411B2

    公开(公告)日:2019-04-30

    申请号:US15681317

    申请日:2017-08-18

    Abstract: Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.

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