公开(公告)号：US11578406B2

公开(公告)日：2023-02-14

申请号：US17114798

申请日：2020-12-08

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  Mohith Verghese ,  David Marquardt ,  Jose Alexandro Romero

IPC: C23C16/448 ,  H01L21/67

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20220359532A1

公开(公告)日：2022-11-10

申请号：US17308577

申请日：2021-05-05

Applicant: Applied Materials, Inc.

Inventor： Yong Yang ,  Kunal Bhatnagar ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Jose Alexandro Romero ,  Mandyam Sriram ,  Mohith Verghese ,  Jacqueline S. Wrench ,  Yixiong Yang

IPC: H01L27/108 ,  C23C16/42 ,  C23C16/455

Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

公开(公告)号：US11359286B2

公开(公告)日：2022-06-14

申请号：US16864877

申请日：2020-05-01

Applicant: Applied Materials, Inc.

Inventor： Jereld Winkler ,  Mohith Verghese

IPC: H01L21/00 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02 ,  H01L21/66 ,  C23C16/44

Abstract: Describe is a quartz crystal microbalance (QCM) device mounted within a heated sample chamber. The sample chamber temperature is maintained about 10° C. to about 30° C. greater than the temperature of the precursor vessel. The sample chamber is connected to the precursor delivery line and includes a high temperature valve and a flow pathway to foreline with a high temperature valve to permit removal of excess material. The QCM device includes a heater and gas cooling channel allowing the device to be maintained at a temperature about 10° C. to about 30° C. less than the temperature of the precursor vessel.

公开(公告)号：US20220178020A1

公开(公告)日：2022-06-09

申请号：US17114798

申请日：2020-12-08

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  Mohith Verghese ,  David Marquardt ,  Jose Alexandro Romero

IPC: C23C16/448 ,  H01L21/67

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20230002893A1

公开(公告)日：2023-01-05

申请号：US17367284

申请日：2021-07-02

Applicant: Applied Materials, Inc.

Inventor： David Marquardt ,  Carl White ,  Mohith Verghese

IPC: C23C16/448 ,  C23C16/44

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20220270883A1

公开(公告)日：2022-08-25

申请号：US17183474

申请日：2021-02-24

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Alex Romero

IPC: H01L21/285 ,  C23C16/14 ,  C23C16/455 ,  C23C16/44

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

公开(公告)号：US12114488B2

公开(公告)日：2024-10-08

申请号：US17308577

申请日：2021-05-05

Applicant: Applied Materials, Inc.

Inventor： Yong Yang ,  Kunal Bhatnagar ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Jose Alexandro Romero ,  Mandyam Sriram ,  Mohith Verghese ,  Jacqueline S. Wrench ,  Yixiong Yang

IPC: H10B12/00 ,  C23C16/42 ,  C23C16/455

CPC classification number: H10B12/488 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45553

Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

公开(公告)号：US12054825B2

公开(公告)日：2024-08-06

申请号：US17355119

申请日：2021-06-22

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  David Marquardt ,  Mohith Verghese

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/4482

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port an outlet port, a manifold having a serpentine base creating a tortuous flow path and a filter media assembly in a bottom-fed configuration. The torturous flow path is defined by a plurality of elongate walls and a plurality of openings of the serpentine base ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20240035151A1

公开(公告)日：2024-02-01

申请号：US18222587

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Rand Haddadin ,  Kunal Bhatnagar ,  Mohith Verghese ,  Jose Alexandro Romero ,  Aniruddh Shekhawat

IPC: C23C16/06 ,  C23C16/04 ,  C23C16/40

CPC classification number: C23C16/06 ,  C23C16/045 ,  C23C16/40

Abstract: Methods for selective deposition are described herein. The methods include depositing an oxide on a first portion of a substrate surface selected from the group consisting of a metal surface, a metal nitride surface and a metal silicide surface. The methods further comprise selectively depositing a molybdenum film on a second portion of the substrate surface that does not have the oxide deposited thereon.

公开(公告)号：US11584990B2

公开(公告)日：2023-02-21

申请号：US17367284

申请日：2021-07-02

Applicant: Applied Materials, Inc.

Inventor： David Marquardt ,  Carl White ,  Mohith Verghese

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/44

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.