公开(公告)号：US10176973B2

公开(公告)日：2019-01-08

申请号：US15411711

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

IPC: B01D53/64 ,  B01D53/68 ,  H01J37/32 ,  B01D53/32 ,  H01L21/02

Abstract: Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

公开(公告)号：US09552967B2

公开(公告)日：2017-01-24

申请号：US14995187

申请日：2016-01-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

IPC: H01L21/465 ,  H01J37/32 ,  B01D53/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

公开(公告)号：US09230780B2

公开(公告)日：2016-01-05

申请号：US14199974

申请日：2014-03-06

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

IPC: C23C16/54 ,  H01J37/32 ,  H01J37/16

CPC classification number: H01J37/3266 ,  H01J37/165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32844 ,  H01J2237/002 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/334 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。 等离子体源具有平行于第一板的第一板和第二板。 电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。