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公开(公告)号：US11072852B2
公开(公告)日：2021-07-27
申请号：US16456769
申请日：2019-06-28
发明人： Brian T. West , Lizhong Sun , William M. Lu
摘要： Embodiments of the disclosure generally relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A film is provided on a portion of the features. The film includes a porosity of about 2% to about 3.5%.
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公开(公告)号：US10153143B2
公开(公告)日：2018-12-11
申请号：US14623419
申请日：2015-02-16
摘要： A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.
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公开(公告)号：US11981989B2
公开(公告)日：2024-05-14
申请号：US17337528
申请日：2021-06-03
CPC分类号： C23C14/541 , C23C14/34 , C23C14/50 , F28F27/02 , H01J37/32724 , H01J2237/002 , H01J2237/332
摘要： Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.
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公开(公告)号：US11469080B1
公开(公告)日：2022-10-11
申请号：US17328855
申请日：2021-05-24
摘要： Embodiments of coolant guides for use in magnetron assemblies are provided herein. In some embodiments, a coolant guide for use in a magnetron assembly includes: a body having a guide channel extending through the body, wherein an upper opening of the guide channel corresponding with an upper surface of the body has a first size and a lower opening of the guide channel corresponding with a lower surface of the body has a second size greater than the first size, and wherein the body includes a first pair of outer sidewalls that are substantially parallel to each other and a second pair of outer sidewalls that are angled toward each other; and an upper lip extending away from an upper surface of the body.
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5.发明授权Capacitively coupled plasma source for abating compounds produced in semiconductor processes 有权用于减少在半导体工艺中产生的化合物的电容耦合等离子体源公开(公告)号：US09543124B2
公开(公告)日：2017-01-10
申请号：US14986070
申请日：2015-12-31
CPC分类号： H01J37/3266 , H01J37/165 , H01J37/32091 , H01J37/321 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J2237/002 , H01J2237/327 , H01J2237/332 , H01J2237/334 , Y02C20/30
摘要： Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
摘要翻译： 本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。 等离子体源具有平行于第一板的第一板和第二板。 电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。
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公开(公告)号：US10662520B2
公开(公告)日：2020-05-26
申请号：US15473093
申请日：2017-03-29
发明人： Brian T. West
摘要： A method for recycling a substrate process component of a processing chamber is provided. In one example, the recycling process includes retrieving a reference dimension for the substrate process component. The substrate process component includes a side wall having a bottom surface, an outer surface, a pre-defined wall thickness between the bottom surface and the outer surface, and a residue layer. The reference dimension corresponds to the pre-defined wall thickness. The recycling process includes machining the substrate process component with a mechanical cutting tool. The machining includes securing the substrate process component to a work piece holder and passing the mechanical cutting tool across the outer surface in a machining operation controlled by a controller to remove the residue layer. The controller uses the reference dimension to control the machining operation so that the substrate process component has the reference dimension after removal of the residue layer.
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公开(公告)号：US10049863B2
公开(公告)日：2018-08-14
申请号：US15715859
申请日：2017-09-26
发明人： Brian T. West , Michael S. Cox , Jeonghoon Oh
摘要： Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.
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公开(公告)号：US09767990B2
公开(公告)日：2017-09-19
申请号：US15188504
申请日：2016-06-21
发明人： Jibing Zeng , Brian T. West , Rongping Wang , Manoj A. Gajendra
CPC分类号： H01J37/3211 , H01J37/32467 , H01J37/32522 , H01J37/32568 , H01J37/32807 , H01J37/32834 , H01J37/32844 , H05H1/2406 , H05H1/30 , H05H2001/2468 , Y02C20/30
摘要： Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube configured to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and a radio frequency (RF) coil wound about an outer surface of the conical sidewall of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.
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公开(公告)号：US09754771B2
公开(公告)日：2017-09-05
申请号：US14338779
申请日：2014-07-23
发明人： Brian T. West , Roger M. Johnson , Michael S. Cox
CPC分类号： H01J37/3405 , H01J23/05 , H01J23/10 , H01J25/50 , H01J25/587 , H01J37/345 , H03B9/10 , H03C3/32 , H03C5/04
摘要： Embodiments of the present invention generally provide a magnetron that is encapsulated by a material that is tolerant of heat and water. In one embodiment, the entire magnetron is encapsulated. In another embodiment, the magnetron includes magnetic pole pieces, and the magnetic pole pieces are not covered by the encapsulating material.
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公开(公告)号：US09378928B2
公开(公告)日：2016-06-28
申请号：US14445965
申请日：2014-07-29
发明人： Jibing Zeng , Brian T. West , Rongping Wang , Manoj A. Gajendra
CPC分类号： H01J37/3211 , H01J37/32467 , H01J37/32522 , H01J37/32568 , H01J37/32807 , H01J37/32834 , H01J37/32844 , H05H1/2406 , H05H1/30 , H05H2001/2468 , Y02C20/30
摘要： Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and an RF coil wound about an outer surface of the conical sidewall of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.
摘要翻译： 提供了用于处理基板处理系统的管道中的气体的装置。 在一些实施例中，用于处理衬底处理系统的导管中的气体的装置包括：电介质管，其被耦合到衬底处理系统的导管，以允许气体流过电介质管，其中介电管具有 锥形侧壁; 以及围绕所述电介质管的所述锥形侧壁的外表面缠绕的RF线圈，所述RF线圈具有第一端以向所述RF线圈提供RF输入，所述RF线圈的所述第一端靠近所述电介质的第一端设置 管和设置在电介质管的第二端附近的第二端。 在一些实施例中，RF线圈是中空的并且包括将中空RF线圈耦合到冷却剂供应的冷却剂配件。
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