-
1.发明授权Capacitively coupled plasma source for abating compounds produced in semiconductor processes 有权用于减少在半导体工艺中产生的化合物的电容耦合等离子体源公开(公告)号：US09543124B2
公开(公告)日：2017-01-10
申请号：US14986070
申请日：2015-12-31
CPC分类号： H01J37/3266 , H01J37/165 , H01J37/32091 , H01J37/321 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J2237/002 , H01J2237/327 , H01J2237/332 , H01J2237/334 , Y02C20/30
摘要： Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
摘要翻译： 本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。 等离子体源具有平行于第一板的第一板和第二板。 电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。
-
公开(公告)号：US11251067B2
公开(公告)日：2022-02-15
申请号：US16396181
申请日：2019-04-26
发明人： Brian T. West , Miroslav Gelo , Yan Rozenzon , Roger M. Johnson , Mark Covington , Soundarrajan Jembulingam , Simon Nicholas Binns , Vivek Vinit
摘要： Implementations described herein provide a pedestal lift assembly for a plasma processing chamber and a method for using the same. The pedestal lift assembly has a platen configured to couple a shaft of a pedestal disposed in the plasma processing chamber. An absolute linear encoder is coupled to a fixed frame wherein the absolute linear encoder is configured to detect incremental movement of the platen. A lift rod is attached to the platen. A motor rotor encoder brake module (MRBEM) is coupled to the fixed frame and moveably coupled to the lift rod, the motor encoder brake module configured to move the lift rod in a first direction and a second direction, wherein the movement of the lift rod results in the platen traveling vertically relative to the fixed frame.
-
公开(公告)号：US11114285B2
公开(公告)日：2021-09-07
申请号：US15487324
申请日：2017-04-13
发明人： Michael S. Cox , Brian T. West , Roger M. Johnson , Yan Rozenzon , Dinkesh Somanna , Dustin W. Ho
摘要： Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes at least one cooling plate a device for introducing turbulence to the exhaust flowing within the exhaust cooling apparatus. The device may be a plurality of fins, a cylinder with a curved top portion, or a diffuser with angled blades. The turbulent flow of the exhaust within the exhaust cooling apparatus causes particles to drop out of the exhaust, minimizing particles forming in equipment downstream of the exhaust cooling apparatus.
-
4.发明授权Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system 有权霍尔效应增强了电容耦合等离子体源，减排系统和真空处理系统公开(公告)号：US09240308B2
公开(公告)日：2016-01-19
申请号：US14498920
申请日：2014-09-26
CPC分类号： H01J37/32844 , B01D53/323 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2258/0216 , H01J37/32082 , H01J37/32357 , H01J37/32495 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32669 , H01J37/32825 , H01J2237/332 , H01J2237/334 , H01J2237/335 , H01L21/02123 , H01L21/02274 , Y02C20/30
摘要： Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
摘要翻译： 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。
-
公开(公告)号：US10153143B2
公开(公告)日：2018-12-11
申请号：US14623419
申请日：2015-02-16
摘要： A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.
-
公开(公告)号：US11911869B2
公开(公告)日：2024-02-27
申请号：US16752181
申请日：2020-01-24
摘要： Embodiments of a system and method for polishing substrates are provided. In one embodiment, a polishing system is provided that includes a polishing module having a platen, and a platen temperature control system. The platen temperature control system includes a PID controller, a fluid controller, and a heat exchanger. The flow controller is configured to control an amount of fluid provided from the heat exchanger to a channels of the platen in response to instructions provided by the PID controller.
-
公开(公告)号：US11850700B2
公开(公告)日：2023-12-26
申请号：US17488429
申请日：2021-09-29
CPC分类号： B24B37/042
摘要： An apparatus and method for sequential application of cleaning fluids for improved maintenance of chemical mechanical polishing (CMP) systems is disclosed. A method includes transferring a first substrate to a first polishing station of a plurality of polishing stations, polishing the first substrate at the first polishing station, transferring the first substrate to a second polishing station, and transferring a second substrate to the first polishing station. The method includes cleaning a first surface of a plurality of surfaces of the polishing system by dispensing a first cleaning fluid from a first one or more nozzles of a plurality of nozzles to direct the first cleaning fluid onto the first surface and dispensing a second cleaning fluid from the first one or more nozzles to direct the second cleaning fluid onto the first surface, where the second cleaning fluid is different from the first cleaning fluid.
-
公开(公告)号：US09754771B2
公开(公告)日：2017-09-05
申请号：US14338779
申请日：2014-07-23
发明人： Brian T. West , Roger M. Johnson , Michael S. Cox
CPC分类号： H01J37/3405 , H01J23/05 , H01J23/10 , H01J25/50 , H01J25/587 , H01J37/345 , H03B9/10 , H03C3/32 , H03C5/04
摘要： Embodiments of the present invention generally provide a magnetron that is encapsulated by a material that is tolerant of heat and water. In one embodiment, the entire magnetron is encapsulated. In another embodiment, the magnetron includes magnetic pole pieces, and the magnetic pole pieces are not covered by the encapsulating material.
-
公开(公告)号：US20160118226A1
公开(公告)日：2016-04-28
申请号：US14986070
申请日：2015-12-31
CPC分类号： H01J37/3266 , H01J37/165 , H01J37/32091 , H01J37/321 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J2237/002 , H01J2237/327 , H01J2237/332 , H01J2237/334 , Y02C20/30
摘要： Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
-
公开(公告)号：US10930479B2
公开(公告)日：2021-02-23
申请号：US16203353
申请日：2018-11-28
摘要： A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.013 秒)
