公开(公告)号：US10600624B2

公开(公告)日：2020-03-24

申请号：US16230766

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Sanjeev Baluja ,  Mayur G. Kulkarni ,  Shailendra Srivastava ,  Tejas Ulavi ,  Yusheng Alvin Zhou ,  Amit Kumar Bansal ,  Priyanka Dash ,  Zhijun Jiang ,  Ganesh Balasubramanian ,  Qiang Ma ,  Kaushik Alayavalli ,  Yuxing Zhang ,  Daniel Hwung ,  Shawyon Jafari

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/50 ,  C23C16/458

Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

公开(公告)号：US20250054804A1

公开(公告)日：2025-02-13

申请号：US18929955

申请日：2024-10-29

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Tejas Ulavi ,  Eric J. Hoffmann ,  Ashutosh Agarwal

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: Apparatus and methods for loading and unloading substrates from a spatial processing chamber are described. A support assembly has a rotatable center base and support arms extending therefrom. A support shaft is at the outer end of the support arms and a substrate support is on the support shaft. Primary lift pins are positioned within openings in the substrate support. Secondary lift pins are positioned within openings in the support arms and are aligned with the primary lift pins. An actuation plate within the processing volume causes, upon movement of the support assembly, the primary lift pins to elevate through contact with the secondary lift pins.

公开(公告)号：US12020957B2

公开(公告)日：2024-06-25

申请号：US17008588

申请日：2020-08-31

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Tejas Ulavi ,  Sanjeev Baluja

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/46 ,  F27D5/00 ,  H01L21/687 ,  H05B3/22

CPC classification number: H01L21/67103 ,  C23C16/45544 ,  C23C16/46 ,  F27D5/0037 ,  H01L21/68771 ,  H05B3/22

Abstract: A heater assembly having a top seal and a second seal configured to account for deviation in processing heights and motor runoff of a heater standoff. The top seal is positioned between a shield plate and a top plate and the bottom seal is positioned between a heater mounting base and the heater standoff.

公开(公告)号：US20230175131A1

公开(公告)日：2023-06-08

申请号：US18103812

申请日：2023-01-31

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Uday Pai ,  Timothy J. Roggenbuck ,  Sanjeev Baluja ,  Kalesh Panchaxari Karadi ,  Tejas Ulavi

IPC: H05K5/02 ,  H02G3/04 ,  C23C16/458 ,  C23C16/455

CPC classification number: H05K5/0247 ,  H02G3/0437 ,  C23C16/4588 ,  C23C16/45544 ,  C23C16/4586

Abstract: Process assemblies and cable management assemblies for managing cables in tight envelopes. A processing assembly includes a top chamber having at least one substrate support, a support shaft, a robot spindle assembly, a stator and a a cable management system. The cable management system includes an inner trough assembly and an outer trough assembly configured to move relative to one another, and a plurality of chain links configured to house at least one cable for delivering power to the process assembly.

公开(公告)号：US20220068674A1

公开(公告)日：2022-03-03

申请号：US17008588

申请日：2020-08-31

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Tejas Ulavi ,  Sanjeev Baluja

IPC: H01L21/67 ,  F27D5/00 ,  H05B3/22 ,  H01L21/687 ,  C23C16/455 ,  C23C16/46

Abstract: A heater assembly having a top seal and a second seal configured to account for deviation in processing heights and motor runoff of a heater standoff. The top seal is positioned between a shield plate and a top plate and the bottom seal is positioned between a heater mounting base and the heater standoff.

公开(公告)号：US20210292898A1

公开(公告)日：2021-09-23

申请号：US17204428

申请日：2021-03-17

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Tejas Ulavi ,  Ashutosh Agarwal

IPC: C23C16/458 ,  C23C16/44 ,  C23C16/52

Abstract: Apparatus and methods for providing backside pressure control and edge purge gas to a substrate in a processing chamber. A support region of a substrate support is defined by an outer band. The support region comprises one or more openings in the top surface of the substrate support. The outer band comprises a plurality of spaced apart posts. Processing chambers, methods of processing a substrate and non-transitory computer-readable medium containing instructions to process a substrate are also disclosed.

公开(公告)号：US11049699B2

公开(公告)日：2021-06-29

申请号：US16516419

申请日：2019-07-19

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Amit Kumar Bansal ,  Nitin Pathak ,  Ajit Balakrishna

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/02

Abstract: Embodiments of the present disclosure relate to apparatus for improving quality of films deposited on a substrate by a CVD process. More specifically, a branched gas feed assembly uniformly distributes a process gas entering an annular plenum. Each conduit of a first plurality of conduits having substantially equal flow conductance is in fluid communication with one or more conduits of a second plurality of conduits having substantially equal flow conductance. Each conduit of the second plurality of conduits terminates at one of a plurality of outlets. Each outlet of the plurality of outlets is in fluid communication with one or more inlet ports of a plurality of inlet ports formed in the annular plenum. Each inlet port of the plurality of inlet ports is spaced equidistant about a central axis of the annular plenum.

公开(公告)号：US10787739B2

公开(公告)日：2020-09-29

申请号：US16658393

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Jared Ahmad Lee ,  Tejas Ulavi ,  Michael Rice

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/67

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

公开(公告)号：US20200131635A1

公开(公告)日：2020-04-30

申请号：US16658393

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Jared Ahmad Lee ,  Tejas Ulavi ,  Michael Rice

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/458

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

公开(公告)号：US11791190B2

公开(公告)日：2023-10-17

申请号：US17314714

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Arkaprava Dan ,  Mike Murtagh ,  Sanjeev Baluja

IPC: H01L21/683 ,  H02N13/00 ,  G01R27/26 ,  H01L21/67

CPC classification number: H01L21/6833 ,  G01R27/2605 ,  H01L21/67242 ,  H02N13/00

Abstract: Substrate supports, substrate support assemblies and methods of using the substrate supports are described. The substrate support has a support surface with at least two electrodes and a plurality of purge channels bounded by a seal band. A power supply connected to the electrodes configured as an electrostatic chuck. A capacitance of the substrate is measured while on the substrate support to determine the chucking state of the substrate.