公开(公告)号：US11242600B2

公开(公告)日：2022-02-08

申请号：US16904169

申请日：2020-06-17

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar Bansal ,  Saket Rathi ,  Tuan Anh Nguyen

IPC: C23C16/40 ,  C23C16/455

Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed in the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.

公开(公告)号：US10854491B2

公开(公告)日：2020-12-01

申请号：US16357101

申请日：2019-03-18

Applicant: Applied Materials, Inc.

Inventor： Jason M. Schaller ,  Michael Rohrer ,  Tuan Anh Nguyen ,  William Tyler Weaver ,  Gregory John Freeman ,  Robert Brent Vopat

IPC: H01L21/68 ,  C23C16/458 ,  H01L21/687 ,  H01L21/67 ,  C23C16/455 ,  C23C16/52 ,  G05B19/418 ,  H01L21/02

Abstract: A method and apparatus for of improving processing results in a processing chamber by orienting a substrate support relative to a surface within the processing chamber. The method comprising orienting a supporting surface of a substrate support in a first orientation relative to an output surface of a showerhead, where the first orientation of the supporting surface relative to the output surface is not coplanar, and depositing a first layer of material on a substrate disposed on the supporting surface that is oriented in the first orientation.

公开(公告)号：US10438860B2

公开(公告)日：2019-10-08

申请号：US15136611

申请日：2016-04-22

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar Bansal ,  Juan Carlos Rocha ,  Karthik Janakiraman ,  Tuan Anh Nguyen

IPC: C23C16/458 ,  H01L21/66 ,  H01L21/02 ,  H01L21/285 ,  H01L21/687 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67

Abstract: The implementations described herein generally relate to steps for the dynamic, real-time control of the process spacing between a substrate support and a gas distribution medium during a deposition process. Multiple dimensional degrees of freedom are utilized to change the angle and spacing of a substrate plane with respect to the gas distributing medium at any time during the deposition process. As such, the substrate and/or substrate support may be leveled, tilted, swiveled, wobbled, and/or moved during the deposition process to achieve improved film uniformity. Furthermore, the independent tuning of each layer may be had due to continuous variations in the leveling of the substrate plane with respect to the showerhead to average effective deposition on the substrate, thus improving overall stack deposition performance.

公开(公告)号：US11530751B2

公开(公告)日：2022-12-20

申请号：US16651192

申请日：2018-09-28

Applicant: Applied Materials, Inc.

Inventor： Tuan Anh Nguyen

IPC: F16K3/06 ,  F16K3/02 ,  F16K31/04 ,  F16K51/02 ,  H01J37/32

Abstract: The present disclosure generally relates to an isolation device for use in processing systems. The isolation device includes a body having a flow aperture formed therethrough. In one embodiment, the isolation device is disposed between a remote plasma source and a process chamber. A closure mechanism is pivotally disposed within the body. The closure mechanism can be actuated to enable or disable fluid communication between the remote plasma source and the process chamber. In one embodiment, the closure mechanism includes a shaft and a seal plate coupled to the shaft. A cross-arm is coupled to the shaft opposite the seal plate. The cross-arm is configured to selectively rotate the shaft and the seal plate of the closure mechanism.

公开(公告)号：US11434569B2

公开(公告)日：2022-09-06

申请号：US16400054

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： Tuan Anh Nguyen ,  Jason M. Schaller ,  Edward P. Hammond, IV ,  David Blahnik ,  Tejas Ulavi ,  Amit Kumar Bansal ,  Sanjeev Baluja ,  Jun Ma ,  Juan Carlos Rocha

IPC: C23C16/505 ,  C23C16/44 ,  C23C16/458

Abstract: Embodiments described herein relate to ground path systems providing a shorter and symmetrical path for radio frequency (RF) energy to propagate to a ground to reduce generation of the parasitic plasma. The ground path system bifurcates the processing volume of the chamber to form an inner volume that isolates an outer volume of the processing volume.

公开(公告)号：US10233543B2

公开(公告)日：2019-03-19

申请号：US14965061

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Sam H. Kim ,  Tuan Anh Nguyen

IPC: C23C16/455

Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and a underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

公开(公告)号：US11574825B2

公开(公告)日：2023-02-07

申请号：US16588959

申请日：2019-09-30

Applicant: Applied Materials, Inc.

Inventor： Tuan Anh Nguyen ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/68 ,  H01L21/02 ,  H01L21/66

Abstract: A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.

公开(公告)号：US11017986B2

公开(公告)日：2021-05-25

申请号：US16001264

申请日：2018-06-06

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Yi Yang ,  Truong Nguyen ,  Nattaworn Boss Nunta ,  Joseph F. Aubuchon ,  Tuan Anh Nguyen ,  Karthik Janakiraman

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44 ,  C23C16/509

Abstract: Disclosed embodiments generally relate to a processing chamber that includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate that includes inner and outer trenches surrounding the central gas channel, and a first and second gas channels formed in the gas manifold. The first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench and a second gas distribution plate The first gas channel is in further fluid communication with a third gas distribution plate that is disposed below the second gas distribution plate, and a plurality of pass-through channels that are disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate as well as a central opening in fluid communication with the central gas channel The second gas distribution plate further includes a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.

公开(公告)号：US10669629B2

公开(公告)日：2020-06-02

申请号：US16192228

申请日：2018-11-15

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Sam H. Kim ,  Tuan Anh Nguyen

IPC: C23C16/455

Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

公开(公告)号：US10249525B2

公开(公告)日：2019-04-02

申请号：US15705031

申请日：2017-09-14

Applicant: Applied Materials, Inc.

Inventor： Jason M. Schaller ,  Michael Paul Rohrer ,  Tuan Anh Nguyen ,  William Tyler Weaver ,  Gregory John Freeman ,  Robert Brent Vopat

IPC: H01L21/68 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  G05B19/418 ,  H01L21/02 ,  H01L21/687

Abstract: A method and apparatus for of improving processing results in a processing chamber by orienting a substrate support relative to a surface within the processing chamber. The method comprising orienting a supporting surface of a substrate support in a first orientation relative to an output surface of a showerhead, where the first orientation of the supporting surface relative to the output surface is not coplanar, and depositing a first layer of material on a substrate disposed on the supporting surface that is oriented in the first orientation.