公开(公告)号：US20160138161A1

公开(公告)日：2016-05-19

申请号：US14815283

申请日：2015-07-31

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Shaunak MUKHERJEE ,  Kelvin CHAN ,  Abhijit Basu MALLICK

IPC: C23C16/505 ,  H01J37/32 ,  C09D1/00

CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/56 ,  H01J37/32357

Abstract: Embodiments described herein generally relate to apparatus and methods for reducing hydrogen content of a film. Apparatus may include a chamber body, a support member coupled to a lift mechanism, and a source of hydrogen radicals. The chamber may have a radical conduit coupled with the source of hydrogen radicals at a first end and coupled with the chamber body at a second end. The chamber may have a dual-channel showerhead coupled with a lid rim. The dual-channel showerhead may be disposed between the radical source and the support member. The showerhead may face the support member. Methods may include forming a first film having a hydrogen content of about 1% to about 50% on a substrate in a chamber, and exposing the first film to hydrogen radicals to form a second film having reduced hydrogen content.

Abstract translation: 本文所述的实施方案一般涉及用于降低膜的氢含量的装置和方法。 设备可以包括室主体，联接到升降机构的支撑构件和氢自由基源。 腔室可以具有在第一端处与氢自由基源耦合的基本导管并且在第二端处与腔体连接。 该腔室可以具有与盖缘耦合的双通道淋浴头。 双通道喷头可以设置在激进源和支撑构件之间。 淋浴头可面向支撑构件。 方法可以包括在室中的基底上形成具有约1％至约50％的氢含量的第一膜，并将第一膜暴露于氢自由基以形成具有降低的氢含量的第二膜。

公开(公告)号：US20160017487A1

公开(公告)日：2016-01-21

申请号：US14472311

申请日：2014-08-28

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Shaunak MUKHERJEE ,  Martin Jay SEAMONS ,  Kelvin CHAN ,  Abhijit Basu MALLICK ,  Bok Hoen KIM ,  Jianhua ZHOU

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/40 ,  C23C16/44

CPC classification number: C23C16/34 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/403

Abstract: A method of processing a substrate includes positioning the substrate within a processing zone of a processing chamber and removing an oxide layer from a surface of the substrate by introducing first radicals into the processing zone. The method further includes, after removing the oxide layer, introducing at least one first precursor gas into the processing zone and depositing at least one dielectric layer onto the surface by exposing the at least one first precursor gas to second radicals. After positioning the substrate within the processing zone, the substrate is not removed from the processing chamber until each of removing the oxide layer and depositing the at least one dielectric layer is performed.

Abstract translation: 一种处理衬底的方法包括将衬底定位在处理室的处理区内，并通过将第一自由基引入处理区从衬底的表面去除氧化物层。 该方法还包括在除去氧化物层之后，通过将至少一种第一前体气体暴露于第二自由基将至少一种第一前体气体引入到处理区域中并将至少一个电介质层沉积到表面上。 在将衬底定位在处理区域内之前，基板不会从处理室中移除，直到执行去除氧化物层和沉积至少一个电介质层。

公开(公告)号：US20150376788A1

公开(公告)日：2015-12-31

申请号：US14468665

申请日：2014-08-26

Applicant: Applied Materials, Inc.

Inventor： Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Yihong CHEN ,  Abhijit Basu MALLICK ,  Oscar LOPEZ ,  Ningli LIU

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505

CPC classification number: C23C16/45565 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/5096 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449

Abstract: Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

Abstract translation: 本文公开的实施例通常包括用于基于基团的沉积电介质膜的装置。 该设备包括处理室，耦合到处理室的自由基源，设置在处理室中的基板支撑件和设置在自由基源和基板支撑件之间的双通道喷头。 双通道淋浴头包括多个管和围绕多个管的内部容积。 多个管和内部体积被嵌入在双通道喷头中的一个或多个环形通道包围。 双通道喷头还包括连接到一个或多个通道的第一入口和连接到内部容积的第二入口。 处理室可以是PECVD室，并且该装置能够执行循环过程（基于交替自由基的CVD和PECVD）。

公开(公告)号：US20150221480A1

公开(公告)日：2015-08-06

申请号：US14601274

申请日：2015-01-21

Applicant: Applied Materials, Inc.

Inventor： Ren-Guan DUAN ,  Juan Carlos ROCHA-ALVAREZ ,  Jianhua ZHOU ,  Ningli LIU ,  Yihong CHEN ,  Abhijit Basu MALLICK ,  Sudhir R. GONDHALEKAR

IPC: H01J37/32 ,  C09D1/00

CPC classification number: H01J37/32477 ,  C09D1/00 ,  C09D7/61 ,  H01J37/32467

Abstract: In one embodiment, a processing chamber is disclosed wherein at least one surface of the processing chamber has a coating comprising SivYwMgxAlyOz, wherein v ranges from about 0.0196 to 0.2951, w ranges from about 0.0131 to 0.1569, x ranges from about 0.0164 to 0.0784, y ranges from about 0.0197 to 0.1569, z ranges from about 0.5882 to 0.6557, and v+w+x+y+z=1.

Abstract translation: 在一个实施方案中，公开了一种处理室，其中处理室的至少一个表面具有包含SivYwMg x AlyO z的涂层，其中v为约0.0196至0.2951，w为约0.0131至0.1569，x为约0.0164至0.0784，y为 范围为约0.0197至0.1569，z范围为约0.5882至0.6557，v + w + x + y + z = 1。

公开(公告)号：US20150167160A1

公开(公告)日：2015-06-18

申请号：US14270216

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Shaunak MUKHERJEE ,  Amit CHATTERJEE ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Ningli LIU ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Mukund SRINIVASAN

IPC: C23C16/452

CPC classification number: C23C16/452 ,  H01J37/32357 ,  H01J37/32422

Abstract: One or more precursor gases, such as one or more silicon-containing gases, which may be one or more organosilicon and/or tetraalkyl orthosilicate gases, are introduced into a processing chamber and exposed to radicals. Dielectric films deposited using the techniques disclosed herein may contain silicon. The deposited films may exhibit few defects, low shrinkage, and high etch selectivity, mechanical stability, and thermal stability. The deposition conditions can be very mild, so damage to the substrate and the as-deposited films from UV radiation and ion bombardment is minimal or nonexistent.

Abstract translation: 一种或多种前体气体，例如一种或多种含硅气体，其可以是一种或多种有机硅和/或原硅酸四烷基酯，被引入处理室并暴露于自由基。 使用本文公开的技术沉积的介质膜可以含有硅。 沉积膜可能表现出很少的缺陷，低收缩率和高蚀刻选择性，机械稳定性和热稳定性。 沉积条件可能非常温和，因此对紫外辐射和离子轰击对基底和沉积膜的损伤最小或不存在。