公开(公告)号：US20230175120A1

公开(公告)日：2023-06-08

申请号：US18062010

申请日：2022-12-05

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Sze Chieh Tan ,  Vicknesh Sahmuganathan ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  John Sudijono ,  Jiteng Gu ,  Kian Ping Loh

IPC: C23C16/27 ,  H01J37/32

CPC classification number: C23C16/274 ,  C23C16/279 ,  H01J37/32192 ,  H01J2237/3321

Abstract: Methods of depositing an adamantane film are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which an adamantane seed layer is deposited on a substrate, converting to a diamond nuclei layer having an increased crystallinity relative to the adamantane seed layer and then grown into full nanocrystalline diamond film from the diamond nuclei layer.

公开(公告)号：US11615966B2

公开(公告)日：2023-03-28

申请号：US16932801

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Praket Prakash Jha ,  Abhijit Basu Mallick

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/3065

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may define a feature within the semiconductor substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. A bias power may be applied to the substrate support from a bias power source. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.

公开(公告)号：US20230058831A1

公开(公告)日：2023-02-23

申请号：US17407533

申请日：2021-08-20

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/56

Abstract: Exemplary methods of semiconductor processing may include etching one or more features partially through a stack of layers formed on a substrate. The methods may include halting the etching prior to penetrating fully through the stack of layers formed on the substrate. The methods may include forming a layer of carbon-containing material along the stack of layers on the substrate. The layer of carbon-containing material may include a metal. The methods may include etching the one or more features fully through the stack of layers on the substrate.

公开(公告)号：US20230057258A1

公开(公告)日：2023-02-23

申请号：US17407504

申请日：2021-08-20

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/311

Abstract: Exemplary methods of semiconductor processing may include forming a layer of carbon-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The substrate may include an exposed region of a first dielectric material and an exposed region of a metal-containing material. The layer of carbon-containing material may be selectively formed over the exposed region of the metal-containing material. Forming the layer of carbon-containing material may include one or more cycles of providing a first molecular species that selectively couples with the metal-containing material. Forming the layer of carbon-containing material may include providing a second molecular species that selectively couples with the first molecular species. The methods may include selectively depositing a second dielectric material on the exposed region of the first dielectric material.

公开(公告)号：US20220411918A1

公开(公告)日：2022-12-29

申请号：US17361231

申请日：2021-06-28

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC: C23C16/30 ,  C23C16/06 ,  C23C16/448 ,  C23C16/04

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

公开(公告)号：US20220384188A1

公开(公告)日：2022-12-01

申请号：US17330035

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Bhaskar Jyoti Bhuyan ,  Mark J. Saly ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/32

Abstract: Exemplary deposition methods may include delivering a ruthenium-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. At least one of the ruthenium-containing precursor or the hydrogen-containing precursor may include carbon. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a ruthenium-and-carbon material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20220336212A1

公开(公告)日：2022-10-20

申请号：US17235241

申请日：2021-04-20

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/311 ,  H01J37/32

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a boron-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the boron-containing precursor at a temperature above about 250° C. The methods may include forming a silicon-and-carbon-containing layer on the substrate.

公开(公告)号：US20220238531A1

公开(公告)日：2022-07-28

申请号：US17720465

申请日：2022-04-14

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-Yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US20220216058A1

公开(公告)日：2022-07-07

申请号：US17142626

申请日：2021-01-06

Applicant: Applied Materials, Inc.

Inventor： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/285 ,  H01L23/532

Abstract: Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

公开(公告)号：US11361991B2

公开(公告)日：2022-06-14

申请号：US16975794

申请日：2019-03-07

Applicant: Applied Materials, Inc.

Inventor： Xin Liu ,  Fei Wang ,  Rui Cheng ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/768 ,  C23C16/01 ,  C23C16/24 ,  C23C16/455 ,  C23C16/46 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/06

Abstract: Embodiments of the present disclosure relate to processes for filling trenches. The process includes depositing a first amorphous silicon layer on a surface of a layer and a second amorphous silicon layer in a portion of a trench formed in the layer, and portions of side walls of the trench are exposed. The first amorphous silicon layer is removed. The process further includes depositing a third amorphous silicon layer on the surface of the layer and a fourth amorphous silicon layer on the second amorphous silicon layer. The third amorphous silicon layer is removed. The deposition/removal cyclic processes may be repeated until the trench is filled with amorphous silicon layers. The amorphous silicon layers form a seamless amorphous silicon gap fill in the trench since the amorphous silicon layers are formed from bottom up.