公开(公告)号：US11894230B2

公开(公告)日：2024-02-06

申请号：US18101317

申请日：2023-01-25

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Eswaranand Venkatasubramanian ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono ,  Zhongxin Chen

IPC分类号： H10B41/27 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L21/0332 ,  H01L21/0337 ,  H10B41/27 ,  H01L21/31122 ,  H01L21/31144

摘要： Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

公开(公告)号：US20230260800A1

公开(公告)日：2023-08-17

申请号：US17671938

申请日：2022-02-15

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Vicknesh Sahmuganathan ,  Eswaranand Venkatasubramanian ,  Jiteng Gu ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31144 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02205

摘要： Hard masks and methods of forming hard masks are described. The hard mask has an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa. The method comprises exposing a substrate to a deposition gas comprising a dopant gas or a precursor (solid (e.g. Alkylborane compounds) or liquid (e.g. Borazine)), a carbon gas and argon at a temperature less than or equal to 550 C, and igniting a plasma from the deposition gas to form an ultrananocrystalline diamond film having an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa.

公开(公告)号：US12037679B2

公开(公告)日：2024-07-16

申请号：US17633010

申请日：2021-12-15

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Zhongxin Chen ,  Kian Ping Loh ,  John Sudijono ,  Haisen Xu ,  Sze Chieh Tan ,  Yuanxing Han ,  Jiecong Tang ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick

IPC分类号： C23C16/27 ,  C01B32/26 ,  C08F2/48 ,  C23C16/02 ,  C23C16/04 ,  C23C16/511

CPC分类号： C23C16/274 ,  C01B32/26 ,  C08F2/48 ,  C23C16/0272 ,  C23C16/042 ,  C23C16/511

摘要： Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.

公开(公告)号：US20230279540A1

公开(公告)日：2023-09-07

申请号：US17633010

申请日：2021-12-15

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Zhongxin Chen ,  Kian Ping Loh ,  John Sudijono ,  Haisen Xu ,  Sze Chieh Tan ,  Yuanxing Han ,  Jiecong Tang ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick

IPC分类号： C23C16/27 ,  C01B32/26 ,  C08F2/48 ,  C23C16/04 ,  C23C16/511 ,  C23C16/02

CPC分类号： C23C16/274 ,  C01B32/26 ,  C08F2/48 ,  C23C16/0272 ,  C23C16/042 ,  C23C16/511

摘要： Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.

公开(公告)号：US20230170217A1

公开(公告)日：2023-06-01

申请号：US18101317

申请日：2023-01-25

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Eswaranand Venkatasubramanian ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono ,  Zhongxin Chen

IPC分类号： H01L21/033 ,  H10B41/27

CPC分类号： H01L21/0332 ,  H01L21/0337 ,  H10B41/27 ,  H01L21/31144

摘要： Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

公开(公告)号：US11594416B2

公开(公告)日：2023-02-28

申请号：US17007441

申请日：2020-08-31

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Eswaranand Venkatasubramanian ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono ,  Zhongxin Chen

IPC分类号： H01L21/033 ,  H01L27/11556 ,  H01L21/311

摘要： Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

公开(公告)号：US20230175120A1

公开(公告)日：2023-06-08

申请号：US18062010

申请日：2022-12-05

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Sze Chieh Tan ,  Vicknesh Sahmuganathan ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  John Sudijono ,  Jiteng Gu ,  Kian Ping Loh

IPC分类号： C23C16/27 ,  H01J37/32

CPC分类号： C23C16/274 ,  C23C16/279 ,  H01J37/32192 ,  H01J2237/3321

摘要： Methods of depositing an adamantane film are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which an adamantane seed layer is deposited on a substrate, converting to a diamond nuclei layer having an increased crystallinity relative to the adamantane seed layer and then grown into full nanocrystalline diamond film from the diamond nuclei layer.

公开(公告)号：US20170263447A1

公开(公告)日：2017-09-14

申请号：US15608525

申请日：2017-05-30

申请人： National University of Singapore

发明人： Kian Ping Loh ,  Libo Gao ,  Antonio Helio Castro Neto

IPC分类号： H01L21/02 ,  H01L21/316 ,  H01L39/24 ,  C30B29/22 ,  C30B23/02 ,  C30B29/26

CPC分类号： H01L21/02107 ,  C01B32/186 ,  C01B32/194 ,  C23C16/01 ,  C23C16/0263 ,  C23C16/0281 ,  C23C16/26 ,  C30B23/02 ,  C30B29/225 ,  C30B29/26 ,  H01L21/02002 ,  H01L21/02326 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/02694 ,  H01L21/3205 ,  H01L29/1606 ,  H01L29/78684 ,  H01L39/2422

摘要： A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is etched and removed by infiltrating liquid to enable the in-situ transfer of the two-dimensional crystalline thin film directly onto the underlying substrate.

公开(公告)号：US09758381B2

公开(公告)日：2017-09-12

申请号：US14910095

申请日：2014-07-31

申请人： National University of Singapore

发明人： Kian Ping Loh ,  Libo Gao ,  Antonio Helio Castro Neto

IPC分类号： H01L21/02 ,  H01L29/16 ,  C01B31/04 ,  C23C16/01 ,  C23C16/02 ,  C23C16/26 ,  H01L29/786

CPC分类号： H01L21/02107 ,  C01B32/186 ,  C01B32/194 ,  C23C16/01 ,  C23C16/0263 ,  C23C16/0281 ,  C23C16/26 ,  C30B23/02 ,  C30B29/225 ,  C30B29/26 ,  H01L21/02002 ,  H01L21/02326 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/02694 ,  H01L21/3205 ,  H01L29/1606 ,  H01L29/78684 ,  H01L39/2422

摘要： A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is etched and removed by infiltrating liquid to enable the in-situ transfer of the two-dimensional crystalline thin film directly onto the underlying substrate.

公开(公告)号：US11804253B2

公开(公告)日：2023-10-31

申请号：US17273990

申请日：2019-09-06

申请人： NATIONAL UNIVERSITY OF SINGAPORE

发明人： Kian Ping Loh ,  Sock Mui Poh

IPC分类号： G11C16/04 ,  G11C11/22 ,  C23C14/06 ,  C23C14/30 ,  C23C14/54 ,  C23C14/56 ,  H01L21/02 ,  H10N70/00 ,  H01L29/872

CPC分类号： G11C11/22 ,  C23C14/0623 ,  C23C14/30 ,  C23C14/541 ,  C23C14/542 ,  C23C14/56 ,  H01L21/02568 ,  H10N70/028 ,  H10N70/841 ,  H10N70/8825 ,  H01L29/872

摘要： A continuous thin film comprises a metal chalcogenide, wherein the metal is selected from the periodic groups 13 or 14 and the chalcogen is: sulphur (S), selenide (Se), or tellurium (Te), and wherein the thin film has a thickness of less than 20 mm. Methods of forming the continuous thin film involve thermally evaporating precursors to form a thin film on the surface of a substrate. In a particular embodiment, molecular beam epitaxy (MBE) is used to grow indium selenide (In2Se3) thin film from two precursors (In2Se3 and Se) and the thin film is used to fabricate a ferroelectric resistive memory device.