公开(公告)号：US20250009671A1

公开(公告)日：2025-01-09

申请号：US18737814

申请日：2024-06-07

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Miaojun Wang ,  Balaji Ganapathy ,  Jonathan Frankel ,  Shivkumar Chiruvolu ,  Pravin K. Narwankar

IPC: A61K9/50 ,  A61K31/397 ,  A61K31/4422 ,  A61K31/517

Abstract: A pharmaceutical composition containing a metal oxide coated particle comprising 1) an amorphous solid dispersion (ASD) core containing an active pharmaceutical ingredient (API) and a polymer; and 2) a metal oxide coating, and the method of making said metal oxide coated particle by atomic layer deposition (ALD). The metal oxide coated particle is useful because it prevents the ASD from crystallization and helps maintain the ASD in an amorphous form.

公开(公告)号：US20230364023A1

公开(公告)日：2023-11-16

申请号：US18199614

申请日：2023-05-19

Applicant: Applied Materials, Inc.

Inventor： Miaojun Wang ,  Jonathan Frankel ,  Pravin K. Narwankar ,  Suneel Kumar Rastogi ,  Shivkumar Chiruvolu ,  Fei Wang ,  Balaji Ganapathy ,  Shrikant Swaminathan

IPC: A61K9/50

CPC classification number: A61K9/501 ,  A61K9/5089

Abstract: Methods for providing an inorganic oxide coating to high aspect ratio particles containing an active pharmaceutical ingredient are described as are compositions containing such coated particles.

公开(公告)号：US12064522B2

公开(公告)日：2024-08-20

申请号：US17492363

申请日：2021-10-01

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Miaojun Wang ,  Colin C. Neikirk ,  Jonathan Frankel ,  Pravin K. Narwankar

IPC: A61K9/50

CPC classification number: A61K9/5089 ,  A61K9/501

Abstract: A method of preparing a pharmaceutical composition having a drug-containing core enclosed by one or more silicon oxide materials is provided. The method entails alternating exposing the particles to gaseous or vaporous SiCl4 and gaseous or vaporous H2O at a reduced temperature and in the absence of a catalyst.

公开(公告)号：US20230355536A1

公开(公告)日：2023-11-09

申请号：US18199625

申请日：2023-05-19

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Geetika Bajaj ,  Pravin K. Narwankar

IPC: A61K9/50

CPC classification number: A61K9/5089 ,  A61K9/501

Abstract: This disclosure pertains to coated drug compositions and methods of preparing coated drug compositions with a low temperature o-zone based silicon oxide coating. Specifically, the instant application discloses a method to coat active pharmaceutical ingredient particles using a silicon precursor and ozone at a low temperature.

公开(公告)号：US20220105048A1

公开(公告)日：2022-04-07

申请号：US17492363

申请日：2021-10-01

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Miaojun Wang ,  Colin C. Neikirk ,  Jonathan Frankel ,  Pravin K. Narwankar

IPC: A61K9/50

Abstract: A method of preparing a pharmaceutical composition having a drug-containing core enclosed by one or more silicon oxide materials is provided. The method entails alternating exposing the particles to gaseous or vaporous SiCl4 and gaseous or vaporous H2O at a reduced temperature and in the absence of a catalyst.

公开(公告)号：US20210351035A1

公开(公告)日：2021-11-11

申请号：US17379508

申请日：2021-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Fei Wang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/02 ,  A61K9/00 ,  A61K31/438 ,  A61K31/4409 ,  A61K31/47 ,  A61K31/497 ,  A61K47/12 ,  A61K47/26 ,  A61K47/36 ,  H01L21/3065

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

公开(公告)号：US20190287808A1

公开(公告)日：2019-09-19

申请号：US15920146

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Prerna Sonthalia Goradia ,  Fei Wang ,  Geetika Bajaj ,  Nitin Ingle ,  Zihui Li ,  Robert Jan Visser ,  Nitin Deepak

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/308 ,  H01J37/32

Abstract: Precursors, such as interhalogens and/or compounds formed of noble gases and halogens, may be supplied in a gaseous form to a semiconductor processing chamber at a predetermined amount, flow rate, pressure, and/or temperature in a cyclic manner such that atomic layer etching of select semiconductor materials may be achieved in each cycle. In the etching process, the element of the precursor that has a relatively higher electronegativity may react with select semiconductor materials to form volatile etching byproducts. The element of the precursor that has a relatively lower electronegativity may form a gas that may be recycled to re-form an precursor with one or more halogen-containing materials using a plasma process.

公开(公告)号：US20170148642A1

公开(公告)日：2017-05-25

申请号：US15337781

申请日：2016-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Fei Wang ,  Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Robert Jan Visser

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31144 ,  C09D183/08 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31116

Abstract: Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent exposure to an etchant or a deposition precursor may then be used to selectively remove silicon nitride or to selectively deposit additional material on the silicon nitride.

公开(公告)号：US20160307771A1

公开(公告)日：2016-10-20

申请号：US14690165

申请日：2015-04-17

Applicant: Applied Materials, Inc.

Inventor： Jingjing Xu ,  Fei Wang ,  Anchuan Wang ,  Nitin K. Ingle ,  Robert Jan Visser

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF may be combined with one or more of several precursors in the substrate processing region and near the substrate to increase the silicon nitride etch rate and/or the silicon nitride selectivity. The silicon nitride etch selectivity is increased most notably when compared with silicon of various forms. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The HF may be flowed through one set of channels in a dual-channel showerhead while the other precursor is flowed through a second set of channels in the dual-channel showerhead.

Abstract translation: 描述了在图案化异质结构上蚀刻氮化硅的方法，并且包括使用无水气相HF的气相蚀刻。 HF可以与衬底处理区域和衬底附近的几种前体中的一种或多种组合以增加氮化硅蚀刻速率和/或氮化硅选择性。 当与各种形式的硅相比时，氮化硅蚀刻选择性最显着地增加。 根据实施例，在衬底处理区域的外部或内部，在任何等离子体中都不会激发前体。 HF可以在双通道喷头中流过一组通道，而另一个前体流经双通道喷头中的第二组通道。

公开(公告)号：US20230097519A1

公开(公告)日：2023-03-30

申请号：US17955431

申请日：2022-09-28

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Pravin K. Narwankar

IPC: A61K9/50

Abstract: This disclosure pertains to coated drug compositions and methods of preparing coated drug compositions with a low temperature silicon oxide coating. Specifically, the instant application discloses a method to coat active pharmaceutical ingredient particles using a silicon precursor and a catalyst at a low temperature.