公开(公告)号：US11171010B2

公开(公告)日：2021-11-09

申请号：US16663970

申请日：2019-10-25

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Rutger Meyer Timmerman Thijssen

IPC: H01L21/263 ,  H01L21/308 ,  H01L21/3065

Abstract: Embodiments described herein relate to methods forming optical device structures. One embodiment of the method includes exposing a substrate to ions at an ion angle relative to a surface normal of a surface of the substrate to form an initial depth of a plurality of depths. A patterned mask is disposed over the substrate and includes two or more projections defining exposed portions of the substrate or a device layer disposed on the substrate. Each projection has a trailing edge at a bottom surface contacting the device layer, a leading edge at a top surface of each projection, and a height from the top surface to the device layer. Exposing the substrate to ions at the ion angle is repeated to form at least one subsequent depth of the plurality of depths.

公开(公告)号：US11112694B2

公开(公告)日：2021-09-07

申请号：US15931333

申请日：2020-05-13

Applicant: Applied Materials, Inc.

Inventor： Andre P. LaBonte ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen

IPC: G03F7/00 ,  G03F7/20 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/302 ,  G02B5/18 ,  G02B27/01

Abstract: A method for forming a device structure is disclosed. The method of forming the device structure includes forming a variable-depth structure in a device material layer using cyclic-etch process techniques. A plurality of device structures is formed in the variable-depth structure to define vertical or slanted device structures therein. The variable-depth structure and the vertical or slanted device structures are formed using an etch process.

公开(公告)号：US10954594B2

公开(公告)日：2021-03-23

申请号：US14957440

申请日：2015-12-02

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Qiwei Liang ,  Tobin Kaufman-Osborn ,  Ludovic Godet ,  Srinivas D. Nemani

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677 ,  C23C16/455

Abstract: The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.

公开(公告)号：US10935799B2

公开(公告)日：2021-03-02

申请号：US16168185

申请日：2018-10-23

Applicant: APPLIED Materials, Inc.

Inventor： Rutger Meyer Timmerman Thijssen ,  Ludovic Godet ,  Morgan Evans ,  Joseph C. Olson

IPC: G02B5/18 ,  G02B27/09 ,  G02B27/01

Abstract: A method of forming an optical grating component. The method may include providing a substrate, the substrate comprising an underlayer and a hard mask layer, disposed on the underlayer. The method may include patterning the hard mask layer to define a grating field and etching the underlayer within the grating field to define a variable height of the underlayer along a first direction, the first direction being parallel to a plane of the substrate. The method may include forming an optical grating within the grating field using an angled ion etch, the optical grating comprising a plurality of angled structures, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the plurality of angled structures define a variable depth along the first direction, based upon the variable height of the underlayer.

公开(公告)号：US10801890B1

公开(公告)日：2020-10-13

申请号：US16539930

申请日：2019-08-13

Applicant: Applied Materials, Inc.

Inventor： Jinxin Fu ,  Yifei Wang ,  Ian Matthew McMackin ,  Rutger Meyer Timmerman Thijssen ,  Ludovic Godet

IPC: G01J3/30 ,  G01J3/18 ,  G02B7/04 ,  G01J3/02 ,  G01J3/42

Abstract: Embodiments of the present disclosure relate to measurement systems and methods for diffracting light. The measurement system includes a stage, an optical arm, and one or more detector arms. The method of diffracting light includes a method of diffracting light is provided, including projecting light beams having wavelength λlaser to a first zone of a first substrate at the fixed beam angle θ0 and the maximum orientation angle ϕmax, obtaining a displacement angle Δθ, determining a target maximum beam angle θt-max, wherein θt-max=θ0+Δθ, and determining a test grating pitch Pt-grating by a modified grating pitch equation Pt-grating=λlaser/(sin θt-max+sin θ0). The measurement system and method allow for measurement of nonuniform properties of regions of an optical device, such as grating pitches and grating orientations.

公开(公告)号：US20200299830A1

公开(公告)日：2020-09-24

申请号：US16823182

申请日：2020-03-18

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: C23C14/56 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34

Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

公开(公告)号：US10775158B2

公开(公告)日：2020-09-15

申请号：US16240301

申请日：2019-01-04

Applicant: APPLIED Materials, Inc.

Inventor： Joseph C. Olson ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Morgan Evans

IPC: G01B11/22 ,  H01L21/306 ,  C03C15/00 ,  G02B5/18

Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optical grating layer, and forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled trenches disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the optical grating layer. The method may further include delivering light from a light source into the optical grating layer, and measuring at least one of: an undiffracted portion of the light exiting the optical grating layer, and a diffracted portion of the light exiting the optical grating layer.

公开(公告)号：US20200158495A1

公开(公告)日：2020-05-21

申请号：US16240301

申请日：2019-01-04

Applicant: APPLIED Materials, Inc.

Inventor： Joseph C. Olson ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Morgan Evans

IPC: G01B11/22 ,  G02B5/18 ,  C03C15/00

Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optical grating layer, and forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled trenches disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the optical grating layer. The method may further include delivering light from a light source into the optical grating layer, and measuring at least one of: an undiffracted portion of the light exiting the optical grating layer, and a diffracted portion of the light exiting the optical grating layer.

公开(公告)号：US10474033B2

公开(公告)日：2019-11-12

申请号：US15692087

申请日：2017-08-31

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Ludovic Godet ,  Srinivas D. Nemani ,  Daniel J. Woodruff ,  Randy Harris ,  Robert B. Moore

IPC: G03D5/00 ,  G03F7/20 ,  H01L21/687 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US10108093B2

公开(公告)日：2018-10-23

申请号：US15782425

申请日：2017-10-12

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Ludovic Godet ,  Christopher Bencher

IPC: G03F7/40 ,  G03F7/38 ,  G03F7/004 ,  G03F7/26

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.