公开(公告)号：US08461013B2

公开(公告)日：2013-06-11

申请号：US12776870

申请日：2010-05-10

申请人： Shinji Maekawa ,  Gen Fujii ,  Junya Maruyama ,  Toru Takayama ,  Yumiko Fukumoto ,  Yasuyuki Arai

发明人： Shinji Maekawa ,  Gen Fujii ,  Junya Maruyama ,  Toru Takayama ,  Yumiko Fukumoto ,  Yasuyuki Arai

IPC分类号： H01L21/76

CPC分类号： G06K19/07749 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/13 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78684

摘要： An IC card is more expensive than a magnetic card, and an electronic tag is also more expensive as a substitute for bar codes. Therefore, the present invention provides an extremely thin integrated circuit that can be mass-produced at low cost unlike a chip of a conventional silicon wafer, and a manufacturing method thereof. One feature of the present invention is that a thin integrated circuit is formed by a formation method that can form a pattern selectively, on a glass substrate, a quartz substrate, a stainless substrate, a substrate made of synthetic resin having flexibility, such as acryl, or the like except for a bulk substrate. Further, another feature of the present invention is that an ID chip in which a thin film integrated circuit and an antenna according to the present invention are mounted is formed.

摘要翻译： IC卡比磁卡贵，电子标签也更昂贵代替条形码。 因此，本发明提供了与常规硅晶片的芯片相比可以以低成本批量生产的极薄的集成电路及其制造方法。 本发明的一个特征在于，通过可以在玻璃基板，石英基板，不锈钢基板，具有柔软性的合成树脂制成的基板（例如丙烯酸酯）上形成图案的形成方法形成薄的集成电路 ，或类似物，除了大量衬底。 此外，本发明的另一个特征是形成其中安装有根据本发明的薄膜集成电路和天线的ID芯片。

公开(公告)号：US08278195B2

公开(公告)日：2012-10-02

申请号：US13287597

申请日：2011-11-02

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

IPC分类号： H01L21/469

CPC分类号： H01J37/32477 ,  C23C16/4401 ,  C23C16/5096 ,  Y10S438/905

摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.

摘要翻译： 在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加 同时保持设备的扩大和易于加工的性能。 等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

公开(公告)号：US20120175619A1

公开(公告)日：2012-07-12

申请号：US13367805

申请日：2012-02-07

申请人： Shunpei YAMAZAKI ,  Toru Takayama ,  Satoshi Murakami ,  Hajime Kimura

发明人： Shunpei YAMAZAKI ,  Toru Takayama ,  Satoshi Murakami ,  Hajime Kimura

IPC分类号： H01L33/08

CPC分类号： G02F1/1368 ,  G02F1/133305 ,  G02F1/136277 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3265 ,  H01L51/5237 ,  H01L2251/5315 ,  H05B33/04

摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

摘要翻译： 提供一种用于防止发光装置的劣化并保留每个像素所需的足够的电容器元件（电容器）的结构。 依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。 设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。 提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。

公开(公告)号：US08129721B2

公开(公告)日：2012-03-06

申请号：US11396436

申请日：2006-04-03

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

IPC分类号： H01L29/04

CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

摘要翻译： 本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触 并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

公开(公告)号：US08120031B2

公开(公告)日：2012-02-21

申请号：US11882146

申请日：2007-07-31

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Satoshi Murakami ,  Hajime Kimura

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Satoshi Murakami ,  Hajime Kimura

IPC分类号： H01L29/04 ,  H01L27/01 ,  H01L23/58

CPC分类号： G02F1/1368 ,  G02F1/133305 ,  G02F1/136277 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3265 ,  H01L51/5237 ,  H01L2251/5315 ,  H05B33/04

摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

摘要翻译： 提供一种用于防止发光装置的劣化并保留每个像素所需的足够的电容器元件（电容器）的结构。 依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。 设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。 提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。

公开(公告)号：US08071981B2

公开(公告)日：2011-12-06

申请号：US12839113

申请日：2010-07-19

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

IPC分类号： H01L29/24

CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

摘要翻译： 本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触 并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

公开(公告)号：US08062935B2

公开(公告)日：2011-11-22

申请号：US12579642

申请日：2009-10-15

申请人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

IPC分类号： H01L21/00

CPC分类号： H01L21/02672 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1251 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757

摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film an a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

摘要翻译： 提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。 通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜 或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火， 。 通过选择性地形成覆盖膜来形成具有薄膜晶体管的动态电路，同时获得漏电流低的晶体管和迁移率高的晶体管，即将成为有源层的半导体层 晶体管，然后通过其热结晶。

公开(公告)号：US08044397B2

公开(公告)日：2011-10-25

申请号：US12266589

申请日：2008-11-07

申请人： Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L29/04

CPC分类号： H01L51/5246 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3276 ,  H01L29/78672 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5243 ,  H01L51/5253 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5323

摘要： To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.

摘要翻译： 实现使用塑料膜的高性能液晶显示装置或发光元件。 CPU形成在第一玻璃基板上，然后与第一基板分离。 具有发光元件的像素部分形成在第二玻璃基板上，然后与第二基板分离。 两者相互结合。 因此，可以实现高集成度。 此外，在这种情况下，包括CPU的分离层也用作发光元件的密封层。

公开(公告)号：US08040456B2

公开(公告)日：2011-10-18

申请号：US10756833

申请日：2004-01-14

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

IPC分类号： G02F1/1335

CPC分类号： G02F1/1362 ,  G02F1/133305 ,  G02F1/133603 ,  G02F2001/13613 ,  H01L27/14678 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592

摘要： To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.

摘要翻译： 为了使便携式电子设备复杂化而不妨碍重量和尺寸的减小，更具体地说，为了使安装在便携式电子设备中的液晶显示装置复杂化而不会妨碍机械强度，液晶显示装置包括第一塑料基板， 布置在第一塑料基板上的发光装置，覆盖发光装置的树脂，与树脂接触的绝缘膜，与绝缘膜接触的半导体装置，液晶单元， 电连接到半导体器件和第二塑料基板，其中半导体器件和液晶单元设置在第一塑料基板和第二塑料基板之间。

公开(公告)号：US20110221409A1

公开(公告)日：2011-09-15

申请号：US13110971

申请日：2011-05-19

申请人： Kazutoshi NAKAMURA ,  Toru Takayama ,  Yuki Kamata ,  Akio Nakagawa ,  Yoshinobu Sano ,  Toshiyuki Naka

发明人： Kazutoshi NAKAMURA ,  Toru Takayama ,  Yuki Kamata ,  Akio Nakagawa ,  Yoshinobu Sano ,  Toshiyuki Naka

IPC分类号： G05F1/00 ,  H03H11/26

CPC分类号： H03K5/00006 ,  G06F1/08 ,  H02J1/00 ,  H02M3/156 ,  H03K2005/00293 ,  H03L7/0996 ,  Y10T307/50

摘要： A semiconductor device includes: a voltage-control-type clock generation circuit having a plurality of stages of first delay elements and whose oscillation frequency is controlled according to a control voltage applied to the first delay elements; a delay circuit having a plurality of stages of second delay elements connected serially; and a selection circuit selecting one from pulse signals output by the plurality of stages of respective second delay elements. The first delay elements and the second delay elements have a same structure formed on a same semiconductor substrate, and a delay amount of the second delay elements is adjusted according to the control voltage.

摘要翻译： 一种半导体器件包括：具有多级的第一延迟元件的电压控制型时钟产生电路，其振荡频率根据施加到第一延迟元件的控制电压而被控制; 具有串联连接的多级第二延迟元件的延迟电路; 以及选择电路，从由各个第二延迟元件的多级输出的脉冲信号中选择一个。 第一延迟元件和第二延迟元件具有形成在同一半导体衬底上的相同结构，并且根据控制电压来调整第二延迟元件的延迟量。