公开(公告)号：US20240132350A1

公开(公告)日：2024-04-25

申请号：US17769400

申请日：2020-10-15

Applicant: BASF SE ,  UNIVERSITY OF CALIFORNIA, OAKLAND

Inventor： Klemens MASSONNE ,  Hendrik DE WINNE ,  Torsten MATTKE ,  Ahmad DEHESTANI ,  Sabine WEIGUNY ,  Stephan ZUEND ,  Eric Wesley MCFARLAND ,  Behzad TANGEYSH ,  Shizhao SU ,  Sabine FRISCHHUT

IPC: C01B7/04 ,  B01J10/00 ,  B01J19/02 ,  B01J19/24 ,  B01J27/08

CPC classification number: C01B7/04 ,  B01J10/005 ,  B01J19/02 ,  B01J19/2465 ,  B01J27/08 ,  B01J2219/0263

Abstract: The invention relates to a process for preparation of chlorine from hydrogen chloride comprising circulating a liquid melt comprising copper ions Cun+ with n being a number in the range from 1 to 2, alkali cations and chloride ions Cl in a reactor system comprising three bubble lift reactors I, II and III, each comprising a reaction zone i, ii and iii respectively, wherein: ⋅(a) in the reaction zone i of the first bubble lift reactor I, a liquid melt comprising copper ions Cun+, alkali cations and chloride ions Cl— is contacted with oxygen at a temperature in the range from 395 to 405° C. so that the molar ratio Cun+:Cu+ in the liquid melt increases, obtaining a liquid melt having an increased molar ratio Cun+:Cu+ ⋅(b) the liquid melt obtained in (a) is circulated to the reaction zone ii in the second bubble lift reactor II, where the liquid melt is contacted with hydrogen chloride at a temperature in the range from 395 to 405° C. so that water is formed, obtaining a liquid melt being enriched in chloride anions (CI-) compared to the liquid melt obtained according to (a); ⋅(c) circulating the liquid melt obtained in (b) to the reaction zone iii in the third bubble lift reactor III, which is operated at a temperature in the range from 420 to 430° C. so that chlorine (Cl2) is formed, wherein Cl2 is removed from the reaction zone iii and the third bubble lift reactor III respectively in gaseous form, leaving a liquid melt depleted of Cl-compared to the liquid melt obtained according to (b). The invention further relates to a reactor system comprising three bubble lift reactors I, II and III.

公开(公告)号：US20230046318A1

公开(公告)日：2023-02-16

申请号：US17778429

申请日：2020-11-16

Applicant: BASF SE ,  Wayne State University

Inventor： Sinja Verena KLENK ,  Alexander Georg HUFNNAGEL ,  Hagen WILMER ,  Daniel LÖFFLER ,  Sabine WEIGUNY ,  Kerstin SCHIERLE-ARNDT ,  Charles Hartger WINTER ,  Nilanka WEERATHUNGA SIRIKKATHUGE

IPC: C23C16/455 ,  C23C16/18

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR2, PR2, OR, SR, CR2, SiR2, X is H, R′ or NR′2, wherein at least one X is H, n is 1 or 2, and R and R′ is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US20220298638A1

公开(公告)日：2022-09-22

申请号：US17616751

申请日：2020-05-27

Applicant: BASF SE ,  Wayne State University

Inventor： Sinja Verena KLENK ,  David Dominique SCHWEINFURTH ,  Lukas MAYR ,  Sabine WEIGUNY ,  Charles WINTER ,  Nilanka WEERATHUNGA SIRIKKATHUGE

IPC: C23C16/455 ,  C07F5/06

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), (III), (IV), (V), (VI), or (VII) in the gaseous state (I) (II) (III) (IV) . . . (V) (VI) (VII) wherein A is NR or O, E is CR″, CNR″2, N, PR″2, or SOR″, G is CR′ or N, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R′ and R″ are hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

公开(公告)号：US20180134557A1

公开(公告)日：2018-05-17

申请号：US15569792

申请日：2016-04-19

Applicant: BASF SE

Inventor： Eberhard BECKMANN ,  Sabine WEIGUNY ,  Martin GÄRTNER ,  Katharina FEDERSEL

IPC: C01B17/66 ,  D21C9/10 ,  D06P1/00

CPC classification number: C01B17/665 ,  D06L4/13 ,  D06L4/30 ,  D06P1/0004 ,  D06P1/647 ,  D06P1/67341 ,  D06P1/6735 ,  D06P1/67366 ,  D06P1/67375 ,  D21C9/1089

Abstract: The present invention relates to a method for reducing or preventing the decomposition of a composition Z comprising Z1 a salt of dithionous acid in an amount ranging from 50 to 100 wt % and optionally Z2 an additive selected from the group consisting of alkali metal carbonate, alkaline earth metal carbonate, alkali metal or alkaline earth metal tripolyphosphate (Na5P3O10), alkali metal or alkaline earth metal sulfite, disulfite or sulfate, dextrose and complexing agents in a combined amount ranging from 0.0001 to 40 wt %, which comprises contacting the components Z1 and optionally Z2 in the solid and/or dry or solvent-dissolved or -suspended state with at least one of the following compounds V in the solid and/or dry or solvent-dissolved or -suspended state, wherein the compounds V are selected from the group consisting of: (a) oxides of the alkali metals lithium, sodium, potassium, rubidium, cesium, or of magnesium, (b) sodium tetrahydroborate (NaBH4), (c) anhydrous copper(II) sulfate (Cu(SO4)), phosphorus pentoxide and (d) basic amino acids arginine, lysine, histidine, wherein the solvent for Z1, optionally Z2 and V is practically water-free.

公开(公告)号：US20180044357A1

公开(公告)日：2018-02-15

申请号：US15557178

申请日：2016-03-02

Applicant: BASF SE

Inventor： Jan SPIELMANN ,  Falko ABELS ,  Florian BLASBERG ,  Katharina FEDERSEL ,  Christian SCHILDKNECHT ,  Daniel LOEFFLER ,  Torben ADERMANN ,  Juergen FRANK ,  Kerstin SCHIERLE-ARNDT ,  Sabine WEIGUNY

IPC: C07F7/08 ,  C23C16/455 ,  C23C16/18 ,  C09D1/00

CPC classification number: C07F7/0814 ,  C07D207/08 ,  C09D1/00 ,  C23C16/18 ,  C23C16/409 ,  C23C16/45553

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular the present invention relates to a process comprising bringing a com-pound of general formula (I) into the gaseous or aerosol state Ln-M-XmL=formula and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, are independent of each other hydrogen, an alkyl group, an aryl group, or a SiA3 group with A being an alkyl or aryl group, and at least two of R1, R2, R3, R4 are a SiA3 group, n is an integer from 1 to 4, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 4.