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公开(公告)号：US20240118573A1
公开(公告)日：2024-04-11
申请号：US17768411
申请日：2021-03-09
发明人： Wenbo DONG , Chaoyue WANG , Wei ZHANG , Chao LI
IPC分类号： G02F1/13357 , F21V8/00
CPC分类号： G02F1/13362 , G02B6/0041
摘要： An edge-lit backlight module (7) includes a light guide plate (71), at least one polarizer (72) and at least one light source (73). The light guide plate (71) has side faces (71a). A polarizer (72) is disposed opposite to a side face (71a) of the light guide plate (71). A light source (73) is disposed on a side of a polarizer (72) away from the light guide plate (71). The at least one polarizer (72) is configured to convert light emitted from a light source (73) disposed on a side of the polarizer away from the light guide plate to the light guide plate (71) into linearly polarized light.
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公开(公告)号：US20220299829A1
公开(公告)日：2022-09-22
申请号：US17515032
申请日：2021-10-29
发明人： Jilei GAO , Wei ZHANG , Miao YU , Benzhi XU , Chao LI , Qi LIU , Xipeng WANG , Yonggang ZHANG
IPC分类号： G02F1/1362
摘要： A display panel and a display device are disclosed. The display panel includes a plurality of sub-pixels arranged in an array; gate line light shielding parts extending in a row direction are arranged on horizontal non-display areas between every two adjacent rows of sub-pixels; vertical non-display areas are arranged between every two sub-pixels adjacent in a row direction; at least one of the vertical non-display areas is provided with a vertical light shielding part, and the vertical light shielding part is configured to prevent two sub-pixels on two sides, in the row direction, of the vertical light shielding part from light leakage at a junction; and a gap is formed between the vertical light shielding part and each of two gate line light shielding parts adjacent to the vertical light shielding part.
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公开(公告)号：US20210151605A1
公开(公告)日：2021-05-20
申请号：US16642638
申请日：2019-03-04
发明人： Zhi WANG , Guangcai YUAN , Feng GUAN , Chen XU , Xueyong WANG , Jianhua DU , Chao LI , Lei CHEN
IPC分类号： H01L29/786 , H01L29/66
摘要： The present disclosure relates to a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a first semiconductor layer, a gate dielectric layer, and a gate electrode sequentially stacked on the substrate, the first semiconductor layer has a first portion located in a channel region of the thin film transistor and a second portion in source/drain regions of the thin film transistor and located on both sides of the first portion, the second portion and first sub-portions of the first portion adjacent to the second portion include an amorphous semiconductor material, a second sub-portion of the first portion between the first sub-portions includes a polycrystalline semiconductor material, and a second semiconductor layer located in the source/drain regions and in contact with the second portion, wherein a conductivity of the second semiconductor layer is higher than a conductivity of the amorphous semiconductor material.
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公开(公告)号：US20210111200A1
公开(公告)日：2021-04-15
申请号：US16846888
申请日：2020-04-13
发明人： Yupeng GAO , Guangcai YUAN , Feng GUAN , Zhi WANG , Jianhua DU , Zhaohui QIANG , Chao LI
IPC分类号： H01L27/12 , H01L29/24 , H01L29/786 , H01L29/66
摘要： The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.
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15.发明公开公开(公告)号：US20240092628A1
公开(公告)日：2024-03-21
申请号：US18517694
申请日：2023-11-22
发明人： Xiaochen MA , Guangcai YUAN , Ce NING , Xin GU , Xiao ZHANG , Chao LI
CPC分类号： B81B1/002 , B01L3/502715 , B81C1/00071 , B01L2300/0645 , B81B2201/05 , B81B2203/0338 , B81C2201/0111 , B81C2201/036
摘要： A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate. The micro-nano channels have a high resolution or an ultra-high resolution, and have different sizes and shapes.
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公开(公告)号：US20220128751A1
公开(公告)日：2022-04-28
申请号：US17485126
申请日：2021-09-24
发明人： Chao LI
IPC分类号： F21V8/00
摘要： A light-transmitting assembly of a display device, a signal indicator, and the display device are provided in the embodiments of the present disclosure. The light-transmitting assembly of the display device includes: a light-transmitting adjustment member including a plurality of first patterns, a light transmittance of each first pattern is less than a light transmittance of a region of the light-transmitting adjustment member other than the first pattern, and each light-shielding area ratio of the first patterns is a ratio of a sum of areas of all the first patterns in any one region of the light-transmitting adjustment member to an area of the any one region.
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公开(公告)号：US20210028315A1
公开(公告)日：2021-01-28
申请号：US16641078
申请日：2019-02-22
发明人： Zhaohui QIANG , Feng GUAN , Zhi WANG , Yupeng GAO , Yang LYU , Chao LI , Jianhua DU , Lei CHEN
IPC分类号： H01L29/786 , H01L29/66 , H01L29/45 , H01L29/417
摘要： The present disclosure provides a thin film transistor, a pixel structure, a display device, and a manufacturing method. The thin film transistor includes: a gate on the substrate; a gate insulating layer covering the gate and the substrate; a first support portion and a second support portion, which are provided on the gate insulating layer covering the substrate and located on both sides of the gate, wherein the first support portion is not connected to the second support portion; a semiconductor layer on the first support portion, the second support portion, and the gate insulating layer covering the gate; and a source and a drain respectively connected to the semiconductor layer. The first support portion and the second support portion are respectively configured to support the semiconductor layer.
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公开(公告)号：US20220252921A1
公开(公告)日：2022-08-11
申请号：US17500233
申请日：2021-10-13
发明人： Qi LIU , Wei ZHANG , Xipeng WANG , Jilei GAO , Yonggang ZHANG , Xin ZHOU , Chao LI , Bin LI , Benzhi XU
IPC分类号： G02F1/1339 , G02F1/1362
摘要： The present disclosure provides a display panel, a manufacturing method thereof, and a display device. The display panel includes: a first substrate and a second substrate arranged opposite to each other, and a first spacer located between the first substrate and the second substrate, both ends of the first spacer are in contact with the first substrate and the second substrate respectively; a surface of the first substrate close to the second substrate includes a recess, and an end of the first spacer in contact with the first substrate is embedded in the recess.
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公开(公告)号：US20210005769A1
公开(公告)日：2021-01-07
申请号：US16909526
申请日：2020-06-23
发明人： Chao LI , Jianhua DU , Feng GUAN , Yupeng GAO , Zhaohui QIANG , Zhi WANG , Yang LYU , Chao LUO
IPC分类号： H01L31/105 , H01L27/12 , H01L31/12 , H01L31/18
摘要： The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.
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公开(公告)号：US20190204603A1
公开(公告)日：2019-07-04
申请号：US16214904
申请日：2018-12-10
发明人： Chao LI , Wei LI , Yanfeng LI , Yanqing CHEN , Ning WANG , Weida QIN , Pan GUO , Yongchao WANG , Haoyi XIN
摘要： A display panel includes a base substrate, and a plurality of sub-pixels disposed on the base substrate and located at least in a left eye display area and a right eye display area of the display panel. The left eye display area and the right eye display area are arranged side by side. An area of the display panel outside the left eye display area and the right eye display area is a non-display area.
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