公开(公告)号：US20220158118A1

公开(公告)日：2022-05-19

申请号：US17360421

申请日：2021-06-28

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jingwen FENG

IPC: H01L51/52 ,  H01L51/56 ,  H01L51/50

Abstract: Disclosed are a light emitting device, a display device and a manufacturing method of the light emitting device. The light emitting device includes a base substrate, a first electrode located on one side of the base substrate, a light emitting layer located on a side, away from the base substrate, of the first electrode, and a second electrode located on a side, away from the first electrode, of the light emitting layer, wherein a least one light adjusting layer is arranged between the first electrode and the second electrode, the light adjusting layer generates carriers when irradiated by light emitted by the light emitting layer, and the carriers enter the light emitting layer under the action of an electric field generated by the first electrode and the second electrode.

公开(公告)号：US20240237389A1

公开(公告)日：2024-07-11

申请号：US18617524

申请日：2024-03-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingwen FENG ,  Yichi ZHANG

IPC: H10K50/16 ,  H10K50/115 ,  H10K71/00 ,  H10K102/00

CPC classification number: H10K50/166 ,  H10K50/115 ,  H10K71/00 ,  H10K2102/00 ,  H10K2102/351

Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between the electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer; a material of the electron contribution layer includes a metal material. The embodiment of the present disclosure also provides a method for manufacturing the quantum dot light emitting diode and a display panel.

公开(公告)号：US20240188394A1

公开(公告)日：2024-06-06

申请号：US17777411

申请日：2021-04-25

Applicant: Beijing BOE Technology Development Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Jingwen FENG

IPC: H10K59/80 ,  G02B5/00

CPC classification number: H10K59/875 ,  G02B5/008

Abstract: A light-emitting element and a method for manufacturing the light-emitting element are provided in the present disclosure. The light-emitting element includes: an anode layer and a cathode layer arranged opposite to each other, a light-emitting layer disposed between the anode layer and the cathode layer, a hole transport layer disposed between the light-emitting layer and the anode layer, an electron transport layer disposed between the light-emitting layer and the cathode layer, and at least one metal nanofilm layer including metal nanostructures, the metal nanofilm layer being arranged between the anode layer and the cathode layer and spaced apart from the light-emitting layer at at least one film layer.

公开(公告)号：US20240088325A1

公开(公告)日：2024-03-14

申请号：US17766838

申请日：2021-04-29

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jingwen FENG

IPC: H01L33/06 ,  H01L25/075 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L25/0753 ,  H01L33/005 ,  H01L2933/0041

Abstract: Disclosed are a quantum dot light emitting diode and a manufacturing method therefor, a display panel and a display device, which belong to the field of display technology. The quantum dot light emitting diode comprises: an anode layer (2), a hole injection layer (3), a hole transport layer (4) and a quantum dot layer (5) which are provided in a stacked manner, a film material of the hole transport layer (4) comprising a mixture of nickel oxide and a target metal oxide, and the target metal oxide comprising at least one metal oxide other than the nickel oxide. The surface/bulk defects on the hole transport layer are passivated by doping the nickel oxide with the target metal oxide.

公开(公告)号：US20230416604A1

公开(公告)日：2023-12-28

申请号：US18244230

申请日：2023-09-09

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xuyong YANG ,  Fan CAO ,  Haiqiao YE ,  Yang LIU ,  Jingwen FENG

IPC: C09K11/88 ,  H10K50/115 ,  C09K11/08 ,  C09K11/70 ,  C09K11/74

CPC classification number: C09K11/883 ,  H10K50/115 ,  C09K11/0883 ,  C09K11/70 ,  C09K11/703 ,  C09K11/7492 ,  B82Y20/00

Abstract: The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.

公开(公告)号：US20220123248A1

公开(公告)日：2022-04-21

申请号：US17458782

申请日：2021-08-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingwen FENG ,  Yichi ZHANG

IPC: H01L51/50 ,  H01L51/56

Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between the electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer; a material of the electron contribution layer includes a metal material. The embodiment of the present disclosure also provides a method for manufacturing the quantum dot light emitting diode and a display panel.