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11.发明申请公开(公告)号：US20180108841A1
公开(公告)日：2018-04-19
申请号：US15525493
申请日：2016-09-20
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanzhao LI , Boris KRISTAL , Chieh Hsing CHUNG , Long WANG , Zhuo CHEN
CPC classification number: H01L51/0015 , H01L27/3211 , H01L51/0009 , H01L51/0013 , H01L51/0027 , H01L51/003 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0077 , H01L51/502 , H01L51/5056 , H01L51/5072 , H01L51/56
Abstract: Embodiments of the present disclosure relate to a quantum dot light emitting diode subpixel array, a method for manufacturing the same, and a display device. The method for manufacturing the quantum dot light emitting diode subpixel array according to embodiments of the present disclosure comprises a quantum dot accepting layer forming step of forming a quantum dot accepting layer on a substrate; a thermosensitive quantum dot material layer applying step of applying a thermosensitive quantum dot material layer containing a thermosensitive organic ligand on the quantum dot accepting layer; and a thermosensitive quantum dot material transferring step of subjecting the organic ligand of the thermosensitive quantum dot material in a predetermined area of the thermosensitive quantum dot material layer to a chemical reaction by heating such that the thermosensitive quantum dot material in the predetermined area is transferred onto a corresponding subpixel region on the quantum dot accepting layer.
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公开(公告)号：US20220113630A1
公开(公告)日：2022-04-14
申请号：US17356629
申请日：2021-06-24
Inventor： Zhuo CHEN
Abstract: A manufacturing method of a patterned quantum dot light-emitting layer includes: forming a sacrificial layer on a side of a base substrate, wherein the sacrificial layer includes a first component and a second component mixed in the first component; forming a patterned photoresist layer on a side of the sacrificial layer facing away from the base substrate; etching the sacrificial layer by taking the patterned photoresist layer as a mask to form a patterned sacrificial layer; forming a quantum dot film layer on a side of the photoresist layer facing away from the sacrificial layer; making the second component decompose under the preset condition to produce the bubbles, to make the first component form the porous structure; and forming the patterned quantum dot light-emitting layer by removing the photoresist layer, the sacrificial layer and the quantum dot film layer attached to the sacrificial layer, by dissolution via a solvent.
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公开(公告)号：US20190267510A1
公开(公告)日：2019-08-29
申请号：US15781309
申请日：2017-10-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Zhuo CHEN
IPC: H01L33/06 , C08F292/00 , C08G61/08 , C09D11/36 , C09D11/50 , C08F212/08
Abstract: A quantum dot complex and its manufacturing method, intermediate and applications are provided. The quantum dot complex includes a quantum dot and a plurality of polymeric chain ligands, wherein each of the polymeric chain ligands includes a coordination unit and at least one polymeric chain, and the coordination unit connects the quantum dot with the polymeric chain; and the polymeric chain has a molecular weight distribution of not more than about 1.3. The surface of the quantum dot in the quantum dot complex is bonded to a plurality of polymeric chain ligands by coordination, and the length of the polymeric chain is accurately controllable, so that the viscosity and surface tension of an ink containing the quantum dot complex can be effectively controlled. Moreover, additives can be avoided and a low boiling point solvent can also be used, thereby ensuring the purity of the quantum dots in the ink.
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公开(公告)号：US20240381751A1
公开(公告)日：2024-11-14
申请号：US18249556
申请日：2022-04-29
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xu YUAN , Xiaoyuan ZHANG , Zhuo CHEN , Zhuo LI , Di ZHANG
IPC: H10K59/95 , H10K50/115 , H10K71/12 , H10K71/20 , H10K71/60
Abstract: A light-emitting substrate includes a substrate and a first light-emitting device. The first light-emitting device includes a first electrode, a first functional layer, a first light-emitting pattern and a second electrode that are sequentially disposed in a direction away from the substrate. The first functional layer is in contact with the first light-emitting pattern. The first light-emitting pattern includes a first light-emitting material. The first light-emitting material includes first light-emitting particles and first ligands combined with the first light-emitting particles. The first functional layer includes a first functional material. The first functional material includes first functional particles and second ligands combined with the first functional particles. A development characteristic of the first ligands is same as a development characteristic of the second ligands.
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15.发明公开公开(公告)号：US20240363796A1
公开(公告)日：2024-10-31
申请号：US18768451
申请日：2024-07-10
CPC classification number: H01L33/06 , H01L33/005 , H01L33/14 , H10K50/15 , H10K71/00
Abstract: A quantum dot light emitting structure and a method for manufacturing the quantum dot light emitting structure, and an array substrate are disclosed. The quantum dot light emitting structure includes: a quantum dot light emitting layer; an electrode; and an electron transport layer located between the quantum dot light emitting layer and the electrode, the quantum dot light emitting structure further comprises an electron blocking layer located in the electron transport layer, a root-mean-square (RMS) roughness of a surface, close to the quantum dot light emitting layer, of the electron transport layer is different from a root-mean-square (RMS) roughness of a surface, away from the quantum dot light emitting layer, of the electron transport layer.
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Patent Agency Ranking
公开(公告)号：US20240224559A1
公开(公告)日：2024-07-04
申请号：US17921087
申请日：2021-12-15
Inventor： Tieshi WANG , Zhuo CHEN , Zhuo LI , Xu YUAN , Di ZHANG
IPC: H10K50/115 , C09K11/06 , H10K59/35 , H10K71/15 , H10K85/10
CPC classification number: H10K50/115 , C09K11/06 , H10K59/35 , H10K71/15 , H10K85/141 , H10K85/151
Abstract: A light emitting device and a fabricating method thereof, and a light emitting apparatus. The light emitting device includes: a substrate, and an assisting layer and a quantum-dot layer that are provided in stack on one side of the substrate, and the assisting layer is close to the substrate; a material of the assisting layer includes a non-polar polymer; and the quantum-dot layer includes quantum dots and a first ligand material coordinated to the quantum dots, and a property of the first ligand material changes by an effect of illumination, so that a solubility of the quantum-dot layer in an organic solvent changes.
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公开(公告)号：US20210370331A1
公开(公告)日：2021-12-02
申请号：US16339783
申请日：2018-09-30
Inventor： Zehua WANG , Naisheng LI , Zhuo CHEN , Yonghui WEI
Abstract: A coating apparatus includes: a nozzle, having a spraying direction; and a rotation part, having a rotation axis, the rotation part being connected with the nozzle to drive the nozzle to rotate around the rotation axis. The spraying direction and an extension direction of the rotation axis are not perpendicular to each other.
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18.发明申请公开(公告)号：US20190296241A1
公开(公告)日：2019-09-26
申请号：US16129622
申请日：2018-09-12
Applicant: BOE Technology Group Co., Ltd.
Inventor： Zhuo CHEN , Yuanming ZHANG , Wenhai MEI
Abstract: A method for patterning a quantum dot layer, a method for manufacturing a display device and a transfer template are provided in embodiments of the disclosure; the method for patterning a quantum dot layer, comprising: preparing a quantum dot layer on a substrate, the quantum dot layer comprising a reserved portion and a portion to be removed; bonding the portion to be removed with a plurality of convex portions provided on a transfer template, by pressing the transfer template against the quantum dot layer; and removing the portion to be removed with a removal of the transfer template, while retaining the reserved portion on the substrate.
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公开(公告)号：US20180356380A1
公开(公告)日：2018-12-13
申请号：US15736750
申请日：2017-04-27
Applicant: Boe Technology Group Co., Ltd.
Inventor： Changcheng JU , Xiyuan WANG , Zhuo CHEN , Long WANG
Abstract: The present disclosure provides a semiconductor hydrogen sensor and a manufacturing method thereof. The semiconductor hydrogen sensor comprises: a substrate; a gas-sensitive material pattern and a metal electrode pattern arranged in a same layer and distributed alternatingly on a side of the substrate; and a two-dimensional material filter layer arranged on a side surface of the gas-sensitive material pattern and the metal electrode pattern facing away from the substrate.
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20.发明申请公开(公告)号：US20180294414A1
公开(公告)日：2018-10-11
申请号：US15865502
申请日：2018-01-09
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wenhai MEI , Zhuo CHEN , Yuanming ZHANG
CPC classification number: H01L51/0007 , H01L21/02109 , H01L51/0003 , H01L51/0092 , H01L51/502
Abstract: A QLED device and manufacturing method thereof, a QLED display panel and a QLED display device are disclosed which improve the surface and internal structure of the quantum dot layer in the QLED devices. The method for manufacturing a QLED device includes forming a first electrode layer; forming a quantum dot layer on the first electrode layer; infiltrating a mixed solvent containing a bifunctional molecule into the quantum dot layer so as to improve the structure of the quantum dot layer; and forming a second electrode layer on the quantum dot layer.
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