公开(公告)号：US09209308B2

公开(公告)日：2015-12-08

申请号：US13985196

申请日：2012-11-08

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xuehui Zhang ,  Xiang Liu ,  Jainshe Xue

IPC: H01L21/84 ,  H01L29/04 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L29/78678 ,  G02F2001/134372 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/78693

Abstract: There is provided a thin film transistor, comprising a substrate (1) and a gate layer (3), a gate insulating layer (4), an active layer (5), an electrode metal layer (8) and a passivation layer (9) which are formed on the substrate (1) in sequence; the electrode metal layer (8) comprises a source electrode (8a) and a drain electrode (8b), which are separated from each other with a channel region being defined therebetween; between the gate layer (3) and the substrate (1), there is formed a first transparent conductive layer (2); between the active layer (5) and the electrode metal layer (8), there is formed a second transparent conductive layer (7). The transparent conductive layers (2, 7) are added so that adhesive force between the gate metal layer (3) and the substrate (1) is enhanced, diffusion of the electrode metal to the active layer (5) is prevented.

Abstract translation: 提供一种薄膜晶体管，其包括基板（1）和栅极层（3），栅极绝缘层（4），有源层（5），电极金属层（8）和钝化层（9） ），其顺序形成在基板（1）上; 所述电极金属层（8）包括源电极（8a）和漏电极（8b），所述源极电极（8a）和漏极电极（8b）彼此分离，沟道区域被限定在其间; 在栅极层（3）和基板（1）之间形成有第一透明导电层（2）; 在活性层（5）和电极金属层（8）之间形成有第二透明导电层（7）。 添加透明导电层（2,7），使得栅极金属层（3）和基板（1）之间的粘合力增强，从而防止了电极金属向有源层（5）的扩散。

公开(公告)号：US20140110677A1

公开(公告)日：2014-04-24

申请号：US13824540

申请日：2012-12-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuehui Zhang

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3274 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/3276 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0541 ,  H01L51/56

Abstract: According to embodiments of the present invention, there are provided an organic semiconductor array substrate, a method for manufacturing the same and a display device. The organic thin film transistor array substrate comprises a pixel structure formed on a transparent substrate; the pixel structure includes: a gate line, a data line, an organic thin film transistor, a pixel electrode, a common electrode line and a common electrode; the organic thin film transistor includes a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode; above the data line, the source electrode, the drain electrode and the pixel electrode, there are disposed in order a first bank insulating layer and a second bank insulating layer from bottom to top; and at openings and through holes of the first bank insulating layer and the second bank insulating layer, the pixel structure is formed by printing.

Abstract translation: 根据本发明的实施例，提供了一种有机半导体阵列基板，其制造方法和显示装置。 有机薄膜晶体管阵列基板包括形成在透明基板上的像素结构; 像素结构包括：栅极线，数据线，有机薄膜晶体管，像素电极，公共电极线和公共电极; 有机薄膜晶体管包括栅电极，栅极绝缘层，有机半导体层，源电极和漏电极; 在数据线上方，源电极，漏电极和像素电极，从下到上按顺序设置第一堤岸绝缘层和第二堤岸绝缘层; 并且在第一堤层绝缘层和第二堤岸绝缘层的开口和通孔处，通过印刷形成像素结构。

公开(公告)号：US09240562B2

公开(公告)日：2016-01-19

申请号：US13824651

申请日：2012-11-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuehui Zhang

IPC: H01L27/28 ,  H01L51/05 ,  H01L51/10

CPC classification number: H01L51/0516 ,  H01L27/283 ,  H01L51/0545 ,  H01L51/102

Abstract: According to embodiments of the present invention, there are disclosed an organic thin film transistor (OTFT) array substrate, a display device and a method for manufacturing the same, which are capable of improving quality of a channel. The OTFT array substrate comprises: a transparent substrate, a gate line and a data line which are formed on the transparent substrate, and a pixel unit which are defined by crossing of the gate line and the data line; the pixel unit including an organic thin film transistor (OTFT) and a pixel electrode; on a channel region of an active layer of the OTFT, there is provided a first passivation layer unit.

Abstract translation: 根据本发明的实施例，公开了能够提高通道质量的有机薄膜晶体管（OTFT）阵列基板，显示装置及其制造方法。 OTFT阵列基板包括：形成在透明基板上的透明基板，栅极线和数据线以及通过栅极线与数据线的交叉限定的像素单元; 所述像素单元包括有机薄膜晶体管（OTFT）和像素电极; 在OTFT的有源层的沟道区上设置有第一钝化层单元。

公开(公告)号：US08952387B2

公开(公告)日：2015-02-10

申请号：US13822920

申请日：2012-11-28

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ce Ning ,  Xuehui Zhang ,  Jing Yang

IPC: H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L29/12 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/062 ,  H01L31/113 ,  H01L21/00 ,  H01L21/84 ,  H01L27/12 ,  H01L21/3213 ,  G02F1/1362

CPC classification number: H01L27/1225 ,  G02F2001/136236 ,  G02F2001/13629 ,  H01L21/32139 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288

Abstract: According to embodiments of the present invention, there are provided a TFT array substrate, a method for manufacturing the TFT array substrate and an electronic device. The method for manufacturing the TFT array substrate includes: a first patterning process, in which a pattern of a pixel electrode formed by a first transparent conductive layer and patterns of a drain electrode and a source electrode that are separated from each other and a data line, which are formed by a first metal layer, are formed on a transparent substrate; a second patterning process, in which a pattern of a gate insulating layer and a pattern of an active layer formed by a transparent oxide layer are formed on the transparent substrate subjected to the first patterning process; and a third patterning process, in which a pattern of a common electrode formed by a second transparent conductive layer and patterns of a gate electrode and a gate line which are formed by a second metal layer are formed on the transparent substrate subjected to the second patterning process.

Abstract translation: 根据本发明的实施例，提供了TFT阵列基板，TFT阵列基板的制造方法和电子设备。 制造TFT阵列基板的方法包括：第一图案形成工艺，其中由第一透明导电层形成的像素电极的图案和彼此分离的漏极和源电极的图案以及数据线 由第一金属层形成，形成在透明基板上; 第二图案化工艺，其中在经过第一图案化工艺的透明衬底上形成栅极绝缘层的图案和由透明氧化物层形成的有源层的图案; 以及第三图案化工艺，其中通过第二透明导电层形成的公共电极的图案和由第二金属层形成的栅电极和栅极线的图案形成在经过第二图案化的透明基板上 处理。

公开(公告)号：US20140183519A1

公开(公告)日：2014-07-03

申请号：US13822920

申请日：2012-11-28

Applicant: BOE TECHNOLOGY GROUP CO. LTD.

Inventor： Ce Ning ,  Xuehui Zhang ,  Jing Yang

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  G02F2001/136236 ,  G02F2001/13629 ,  H01L21/32139 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288

Abstract: According to embodiments of the present invention, there are provided a TFT array substrate, a method for manufacturing the TFT array substrate and an electronic device. The method for manufacturing the TFT array substrate comprises: a first patterning process, in which a pattern of a pixel electrode formed by a first transparent conductive layer and patterns of a drain electrode and a source electrode that are separated from each other and a data line, which are formed by a first metal layer, are formed on a transparent substrate; a second patterning process, in which a pattern of a gate insulating layer and a pattern of an active layer formed by a transparent oxide layer are formed on the transparent substrate subjected to the first patterning process; and a third patterning process, in which a pattern of a common electrode formed by a second transparent conductive layer and patterns of a gate electrode and a gate line which are formed by a second metal layer are formed on the transparent substrate subjected to the second patterning process.

Abstract translation: 根据本发明的实施例，提供了TFT阵列基板，TFT阵列基板的制造方法和电子设备。 制造TFT阵列基板的方法包括：第一图案化工艺，其中由第一透明导电层形成的像素电极的图案以及彼此分离的漏电极和源电极的图案以及数据线 由第一金属层形成，形成在透明基板上; 第二图案化工艺，其中在经过第一图案化工艺的透明衬底上形成栅极绝缘层的图案和由透明氧化物层形成的有源层的图案; 以及第三图案化工艺，其中通过第二透明导电层形成的公共电极的图案和由第二金属层形成的栅电极和栅极线的图案形成在经过第二图案化的透明基板上 处理。

公开(公告)号：US20140091331A1

公开(公告)日：2014-04-03

申请号：US13703483

申请日：2012-09-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Xuehui Zhang ,  Jing Yang

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/326

Abstract: The embodiments of the invention provide a display device, a thin film transistor, an array substrate and a manufacturing method thereof. The manufacturing method comprises: step A, forming patterns of a source electrode, a drain electrode, a data line and a pixel electrode; step B, forming an active layer and agate insulating layer in order, and forming a via hole in the gate insulating layer for connecting the data line and an external circuit; and step C, forming patterns of a gate electrode, a gate line and a common electrode line, or forming a pattern of a gate electrode, a gate line and a common electrode.

Abstract translation: 本发明的实施例提供一种显示装置，薄膜​​晶体管，阵列基板及其制造方法。 制造方法包括：步骤A，形成源电极，漏电极，数据线和像素电极的图案; 步骤B，依次形成有源层和玛瑙绝缘层，并在用于连接数据线和外部电路的栅极绝缘层中形成通孔; 和步骤C，形成栅电极，栅极线和公共电极线的图案，或形成栅电极，栅极线和公共电极的图案。