公开(公告)号：US09502235B2

公开(公告)日：2016-11-22

申请号：US13991729

申请日：2012-12-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhanfeng Cao ,  Xuehui Zhang

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L21/02244 ,  H01L27/1248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: According to embodiments of the invention, a thin film transistor (TFT), a manufacturing method of the TFT, an array substrate and a display device are provided. The manufacturing method of the TFT comprises: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate formed with the gate electrode; forming an oxide semiconductor active layer, an etch stop layer and a source/drain electrode on the gate insulating layer, wherein the etch stop layer is obtained by an oxidation treatment.

Abstract translation: 根据本发明的实施例，提供薄膜晶体管（TFT），TFT的制造方法，阵列基板和显示装置。 TFT的制造方法包括：在基板上形成栅电极; 在形成有栅电极的基板上形成栅极绝缘层; 在栅极绝缘层上形成氧化物半导体活性层，蚀刻停止层和源极/漏极，其中通过氧化处理获得蚀刻停止层。

公开(公告)号：US20140061634A1

公开(公告)日：2014-03-06

申请号：US13991729

申请日：2012-12-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhanfeng Cao ,  Xuehui Zhang

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L21/02244 ,  H01L27/1248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: According to embodiments of the invention, a thin film transistor (TFT), a manufacturing method of the TFT, an array substrate and a display device are provided. The manufacturing method of the TFT comprises: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate formed with the gate electrode; forming an oxide semiconductor active layer, an etch stop layer and a source/drain electrode on the gate insulating layer, wherein the etch stop layer is obtained by an oxidation treatment.

Abstract translation: 根据本发明的实施例，提供了薄膜晶体管（TFT），TFT的制造方法，阵列基板和显示装置。 TFT的制造方法包括：在基板上形成栅电极; 在形成有栅电极的基板上形成栅极绝缘层; 在栅极绝缘层上形成氧化物半导体活性层，蚀刻停止层和源极/漏极，其中通过氧化处理获得蚀刻停止层。

公开(公告)号：US20140054565A1

公开(公告)日：2014-02-27

申请号：US13824651

申请日：2012-11-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuehui Zhang

IPC: H01L51/05

CPC classification number: H01L51/0516 ,  H01L27/283 ,  H01L51/0545 ,  H01L51/102

Abstract: According to embodiments of the present invention, there are disclosed an organic thin film transistor (OTFT) array substrate, a display device and a method for manufacturing the same, which are capable of improving quality of a channel. The OTFT array substrate comprises: a transparent substrate, a gate line and a data line which are formed on the transparent substrate, and a pixel unit which are defined by crossing of the gate line and the data line; the pixel unit including an organic thin film transistor (OTFT) and a pixel electrode; on a channel region of an active layer of the OTFT, there is provided a first passivation layer unit.

Abstract translation: 根据本发明的实施例，公开了能够提高通道质量的有机薄膜晶体管（OTFT）阵列基板，显示装置及其制造方法。 OTFT阵列基板包括：形成在透明基板上的透明基板，栅极线和数据线以及通过栅极线与数据线的交叉限定的像素单元; 所述像素单元包括有机薄膜晶体管（OTFT）和像素电极; 在OTFT的有源层的沟道区上设置有第一钝化层单元。

公开(公告)号：US09905787B2

公开(公告)日：2018-02-27

申请号：US13824605

申请日：2012-11-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuehui Zhang

IPC: G02F1/13 ,  G02F1/1362 ,  H01L51/05 ,  H01L29/66 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/28 ,  H01L51/10 ,  H01L29/786

CPC classification number: H01L51/0541 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/1288 ,  H01L27/283 ,  H01L29/66757 ,  H01L29/7869 ,  H01L51/102 ,  H01L51/105

Abstract: According to embodiments of the present invention, there are provided an array substrate, a method for manufacturing the same and a display device, capable of reducing production difficulty of the array substrate. The manufacturing process of the array substrate is simplified, and the production cost is reduced. The array substrate comprises thin film transistor in a top-gate, bottom-contact configuration which is located on a substrate. Regarding the thin film transistor, its gate electrode is connected to a gate line, its source electrode is connected to a data line, and its drain electrode is connected to a pixel electrode.

公开(公告)号：US09754979B2

公开(公告)日：2017-09-05

申请号：US13703483

申请日：2012-09-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Xuehui Zhang ,  Jing Yang

IPC: H01L29/18 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/326

Abstract: The embodiments of the invention provide a display device, a thin film transistor, an array substrate and a manufacturing method thereof. The manufacturing method comprises: step A, forming patterns of a source electrode, a drain electrode, a data line and a pixel electrode; step B, forming an active layer and agate insulating layer in order, and forming a via hole in the gate insulating layer for connecting the data line and an external circuit; and step C, forming patterns of a gate electrode, a gate line and a common electrode line, or forming a pattern of a gate electrode, a gate line and a common electrode.

公开(公告)号：US09281353B2

公开(公告)日：2016-03-08

申请号：US13824540

申请日：2012-12-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuehui Zhang

IPC: H01L27/32 ,  H01L51/56 ,  G02F1/1362 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L27/3274 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/3276 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0541 ,  H01L51/56

Abstract: According to embodiments of the present invention, there are provided an organic semiconductor array substrate, a method for manufacturing the same and a display device. The organic thin film transistor array substrate comprises a pixel structure formed on a transparent substrate; the pixel structure includes: a gate line, a data line, an organic thin film transistor, a pixel electrode, a common electrode line and a common electrode; the organic thin film transistor includes a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode; above the data line, the source electrode, the drain electrode and the pixel electrode, there are disposed in order a first bank insulating layer and a second bank insulating layer from bottom to top; and at openings and through holes of the first bank insulating layer and the second bank insulating layer, the pixel structure is formed by printing.

Abstract translation: 根据本发明的实施例，提供了一种有机半导体阵列基板，其制造方法和显示装置。 有机薄膜晶体管阵列基板包括形成在透明基板上的像素结构; 像素结构包括：栅极线，数据线，有机薄膜晶体管，像素电极，公共电极线和公共电极; 有机薄膜晶体管包括栅电极，栅极绝缘层，有机半导体层，源电极和漏电极; 在数据线上方，源电极，漏电极和像素电极，从下到上按顺序设置第一堤岸绝缘层和第二堤岸绝缘层; 并且在第一堤层绝缘层和第二堤岸绝缘层的开口和通孔处，通过印刷形成像素结构。

公开(公告)号：US20140070181A1

公开(公告)日：2014-03-13

申请号：US13824605

申请日：2012-11-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuehui Zhang

IPC: H01L51/05 ,  H01L27/28 ,  H01L51/10

CPC classification number: H01L51/0541 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/1288 ,  H01L27/283 ,  H01L29/66757 ,  H01L29/7869 ,  H01L51/102 ,  H01L51/105

Abstract: According to embodiments of the present invention, there are provided an array substrate, a method for manufacturing the same and a display device, capable of reducing production difficulty of the array substrate. The manufacturing process of the array substrate is simplified, and the production cost is reduced. The array substrate comprises thin film transistor in a top-gate, bottom-contact configuration which is located on a substrate. Regarding the thin film transistor, its gate electrode is connected to a gate line, its source electrode is connected to a data line, and its drain electrode is connected to a pixel electrode.

Abstract translation: 根据本发明的实施例，提供了能够降低阵列基板的制造难度的阵列基板，其制造方法和显示装置。 阵列基板的制造工序简化，生产成本降低。 阵列衬底包括位于衬底上的顶栅，底接触构型的薄膜晶体管。 关于薄膜晶体管，其栅电极连接到栅极线，其源电极连接到数据线，并且其漏电极连接到像素电极。

公开(公告)号：US20140061615A1

公开(公告)日：2014-03-06

申请号：US13985195

申请日：2012-12-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuehui Zhang

IPC: H01L51/05

CPC classification number: H01L51/0512 ,  G02F1/136286 ,  H01L27/283 ,  H01L27/3274 ,  H01L51/0541 ,  H01L51/10

Abstract: There are provided an organic thin film transistor array substrate and a method for manufacturing the same which increases the manufacturing efficiency of the organic thin film transistor array substrate. In the method, a pattern layer of pixel electrode, and a pattern layer of source electrode and data line and a pattern layer of drain electrode, which are located above the pattern layer of pixel electrode, are formed on a substrate through one patterning process; an organic semiconductor layer that covers the pattern layer of source electrode and data line and the pattern layer of drain electrode and a gate insulating layer that covers the organic semiconductor layer are formed through one patterning process; and a pattern layer of gate electrode and gate line is formed through one patterning process on the substrate formed with the gate insulating layer.

Abstract translation: 提供了有机薄膜晶体管阵列基板及其制造方法，其提高了有机薄膜晶体管阵列基板的制造效率。 在该方法中，通过一个图案化工艺在基板上形成位于像素电极的图案层上方的像素电极的图案层，源电极和数据线的图案层以及漏极的图案层， 通过一个图案化工艺形成覆盖源电极和数据线的图案层的有机半导体层和漏极的图案层和覆盖有机半导体层的栅极绝缘层; 并且在形成有栅极绝缘层的基板上通过一个图案化工艺形成栅电极和栅极线的图案层。

公开(公告)号：US09515101B2

公开(公告)日：2016-12-06

申请号：US14098756

申请日：2013-12-06

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuehui Zhang

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L27/12 ,  H01L29/45

CPC classification number: H01L27/1259 ,  H01L27/124 ,  H01L29/458

Abstract: The present invention provides an array substrate and a method for manufacturing the same, and a display device. Wherein, after forming a pattern corresponding to a source/drain electrode layer, a transparent conducting layer is formed, and then a passivation layer is formed on the transparent conducting layer. Because the transparent conducting layer has a characteristic of anti-etching, it is hard to be damaged, so that the problem of damage of copper in the source/drain electrode layer is solved without increasing the process steps for forming the array substrate.

Abstract translation: 本发明提供一种阵列基板及其制造方法以及显示装置。 其中，在形成与源极/漏极电极层对应的图案之后，形成透明导电层，然后在透明导电层上形成钝化层。 由于透明导电层具有抗蚀刻的特性，因此难以被破坏，从而在不增加形成阵列基板的工艺步骤的情况下解决了源极/漏电极层中的铜损坏的问题。

公开(公告)号：US09219238B2

公开(公告)日：2015-12-22

申请号：US13985195

申请日：2012-12-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuehui Zhang

IPC: H01L51/05 ,  H01L27/28 ,  H01L27/32 ,  H01L51/10 ,  G02F1/1362

CPC classification number: H01L51/0512 ,  G02F1/136286 ,  H01L27/283 ,  H01L27/3274 ,  H01L51/0541 ,  H01L51/10

Abstract: Disclosed is an organic thin film transistor array substrate and a method for manufacturing. The method increases the manufacturing efficiency of the organic thin film transistor array substrate. In the method, a pixel electrode, a source electrode, a data line and a drain electrode are formed on a substrate through one patterning process, where both of the pattern layer for the source electrode and the pattern layer for the data line and the drain electrode are located above the pixel electrode. An organic semiconductor layer and a gate insulating layer that covers the organic semiconductor layer are formed through one patterning process, where the organic semiconductor layer covers both of the pattern layer for the source electrode and the pattern layer for the data line and the drain electrode. A gate electrode and a gate line are formed through one patterning process on the substrate formed with the gate insulating layer.

Abstract translation: 公开了一种有机薄膜晶体管阵列基板及其制造方法。 该方法提高了有机薄膜晶体管阵列基板的制造效率。 在该方法中，像素电极，源电极，数据线和漏电极通过一个图案化工艺形成在衬底上，其中用于源电极的图案层和用于数据线的图案层和漏极 电极位于像素电极上方。 通过一个图案化工艺形成覆盖有机半导体层的有机半导体层和栅极绝缘层，其中有机半导体层覆盖用于源电极的图案层和用于数据线和漏电极的图案层两者。 在形成有栅极绝缘层的基板上通过一个图案化工艺形成栅电极和栅极线。