公开(公告)号：US5846332A

公开(公告)日：1998-12-08

申请号：US680724

申请日：1996-07-12

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32834 ,  H01J2237/2001

摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

摘要翻译： 衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。 本发明减少了导电材料在支撑晶片的基座周边部分和排出腔室的泵送通道中的热沉积。 放置在基座上的优选也用于使晶片居中的外围环与基座热隔离，使得其温度保持基本上低于晶片的温度。 尽管其热隔离，外围环电连接到基座以防止电弧。 泵浦通道衬有各种元件，其中一些元件是电浮动的，并且被设计成使得沉积在这些元件上的导电材料不会有害地影响用于处理晶片的等离子体。

公开(公告)号：US5369207A

公开(公告)日：1994-11-29

申请号：US90419

申请日：1993-07-12

申请人： Stefan Wolff ,  Hans Renz ,  Guenter Mohrhardt

发明人： Stefan Wolff ,  Hans Renz ,  Guenter Mohrhardt

IPC分类号： C07D251/34 ,  C08G18/02 ,  C08G18/28 ,  C08G18/78 ,  C08G18/79 ,  C08G18/80 ,  C09D175/00 ,  C09D175/12 ,  C08G18/30

CPC分类号： C08G18/8064 ,  C08G18/283 ,  C08G18/7837 ,  C08G18/791 ,  C08G18/798

摘要： A process for the preparation of isocyanurate and urethane group-containing and, if desired, uretdiode and allophanate group-containing polyisocyanate mixtures by partially cyclizing organic, preferably (cyclo)aliphatic diisocyanates, in the presence of trimerization catalysts, deactivating these catalysts, reacting the partially trimerized, isocyanurate and, if desired, uretdiode group-containing polyisocyanate mixture with 0.5 to 10 mol % of at least one aliphatic or cycloaliphatic alcohol and/or polyoxyalkylene alcohol, and separating off the monomeric diisocyanates.

摘要翻译： 通过在三聚催化剂的存在下部分环化有机（优选（环））脂族二异氰酸酯，通过使这些催化剂失活来使得制备含异氰脲酸酯和氨基甲酸酯基团的方法，并且如果需要，含有脲基和脲基甲酸酯基的多异氰酸酯混合物， 部分三聚，异氰脲酸酯，并且如果需要，含有脲基团的多异氰酸酯混合物与0.5至10mol％的至少一种脂族或脂环族醇和/或聚氧化烯醇，并分离出单体二异氰酸酯。

公开(公告)号：US20090301965A1

公开(公告)日：2009-12-10

申请号：US12333945

申请日：2008-12-12

申请人： Jörg SCHWERDT ,  Stefan Wolff ,  Jan Parmentier

发明人： Jörg SCHWERDT ,  Stefan Wolff ,  Jan Parmentier

IPC分类号： C02F3/26

CPC分类号： C02F3/1221 ,  C02F1/78 ,  C02F2301/043 ,  Y02W10/15

摘要： The process according to the invention for treating water in a treatment plant comprising a reaction chamber in which a biodegradable material present in the water is biodegraded at least partly by microorganisms, in the course of which, at least temporarily, water is transferred out of the reaction chamber into a separating chamber and the biodegradable material and the microorganisms are separated at least partly from the water therein, a return stream comprising biodegradable material and at least some of the microorganisms flowing out of the separating chamber into the reaction chamber via a recycle line, is characterized in that at least some of the following substances: a) the biodegradable material and b) the microorganisms are treated with ozone (O3), an amount of 15 to 150 milligrams of ozone per kilogram of dry substance of the biodegradable material and of the microorganisms being added per hour in the reaction chamber.

摘要翻译： 根据本发明的用于在处理设备中处理水的方法，其包括反应室，其中存在于水中的可生物降解的材料至少部分地被微生物降解，其中至少暂时将水从 反应室进入分离室，并且所述可生物降解的材料和所述微生物至少部分地与其中的水分离，所述返回流包含可生物降解的材料，并且所述微生物中的至少一些通过再循环管线流出所述分离室进入所述反应室 其特征在于，至少一些以下物质：a）生物可降解材料和b）微生物用臭氧（O 3）处理，每千克干物质的可生物降解材料含有15至150毫克臭氧， 的微生物在反应室中每小时加入。

公开(公告)号：US06366346B1

公开(公告)日：2002-04-02

申请号：US09196459

申请日：1998-11-19

申请人： Thomas Nowak ,  Sebastien Raoux ,  Dave Silvetti ,  Stefan Wolff ,  Russ Newman ,  Imad Yousif ,  Ned Matthew

发明人： Thomas Nowak ,  Sebastien Raoux ,  Dave Silvetti ,  Stefan Wolff ,  Russ Newman ,  Imad Yousif ,  Ned Matthew

IPC分类号： G01R3100

CPC分类号： H01J37/32834 ,  C23C16/4401 ,  H01J37/32935

摘要： A method and apparatus for determining the composition of an effluent stream from a vacuum processing chamber. A cell placed in the effluent stream from the vacuum processing chamber creates a glow discharge from the constituents in the effluent stream. An optical detector measures a particular wavelength corresponding to the presence of a particular species. In one embodiment the output from the optical detector is used to determine the endpoint of a chamber cleaning process.

摘要翻译： 一种用于确定来自真空处理室的流出物流的组成的方法和装置。 从真空处理室放置在流出物流中的电池从流出物流中的成分产生辉光放电。 光学检测器测量对应于特定物种的存在的特定波长。 在一个实施例中，来自光学检测器的输出用于确定腔室清洁过程的终点。

公开(公告)号：US06270859B1

公开(公告)日：2001-08-07

申请号：US09049856

申请日：1998-03-27

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C1634

摘要： A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.

公开(公告)号：US06189482B1

公开(公告)日：2001-02-20

申请号：US08799415

申请日：1997-02-12

申请人： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Talex Sajoto ,  Stefan Wolff ,  Leonid Selyutin ,  Ashok Sinha

发明人： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Talex Sajoto ,  Stefan Wolff ,  Leonid Selyutin ,  Ashok Sinha

IPC分类号： C23C1600

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321

摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400° C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以200埃/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

公开(公告)号：US08926002B2

公开(公告)日：2015-01-06

申请号：US13589243

申请日：2012-08-20

申请人： Joachim Schaefer ,  Uwe Schmitz ,  Stefan Wolff ,  Stephan Walter

发明人： Joachim Schaefer ,  Uwe Schmitz ,  Stefan Wolff ,  Stephan Walter

IPC分类号： B62D25/08 ,  B60R21/34

CPC分类号： B62D25/081 ,  B60R21/34 ,  B60R2021/343

摘要： A motor vehicle body includes, but is not limited to a front hood, a windshield rising from a rear edge of the front hood and a cross member substantially extending over the width of the windshield, of which a front edge supports a front lower edge of the windshield and a rear edge is supported on a structural element of the body. A top side of the cross member faces the passenger cell and a bottom side faces the engine compartment. Between the front edge and the rear edge the cross member comprises at least one first region, in which the top side is concavely curved in a section plane running in vehicle longitudinal direction and which yields to a load by intensifying the curvature along an apex line yielding towards the engine compartment and pivoting of two zones extending on both sides of the apex line towards each other.

摘要翻译： 机动车体包括但不限于前罩，从前罩的后边缘上升的挡风玻璃和大致延伸在挡风玻璃的宽度上的横向构件，其前缘支撑前挡风玻璃的前下边缘 挡风玻璃和后缘被支撑在身体的结构元件上。 横向构件的顶侧面向乘客舱，底侧面向发动机舱。 在前边缘和后边缘之间，横向构件包括至少一个第一区域，其中顶侧在沿车辆纵向方向运动的截面中凹形弯曲，并且通过沿着顶点线增强曲率而产生负载 朝向发动机室并且在顶点线的两侧朝向彼此延伸的两个区域的枢转。

公开(公告)号：US6129044A

公开(公告)日：2000-10-10

申请号：US409477

申请日：1999-10-06

申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32 ,  C23C16/00 ,  G06F19/00

CPC分类号： C23C16/4411 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/2001

摘要： The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

摘要翻译： 本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。 根据实施例，本发明提供了一种用于基板处理的装置。 该装置使热交换介质通过真空室的室主体中的通道循环，并将具有用于支撑基板的表面的加热器基座加热到加热器温度。 热交换介质的热交换温度为约60℃以下。 该设备还以流速将气体流入室中，以将膜沉积在基底上，其中流速提供了低于加热器温度的基底的有效温度，并且其中膜在沉积之后满足均匀性和电阻规格 一些基板。 在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。 因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

公开(公告)号：US6035101A

公开(公告)日：2000-03-07

申请号：US56703

申请日：1998-03-26

申请人： Talex Sajoto ,  Leonid Selyutin ,  Jun Zhao ,  Stefan Wolff

发明人： Talex Sajoto ,  Leonid Selyutin ,  Jun Zhao ,  Stefan Wolff

IPC分类号： H05B3/68 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  H01L21/00 ,  H01L21/285 ,  H01L21/31 ,  C23C16/00 ,  F27B5/14 ,  F28F7/00 ,  H01L21/68

CPC分类号： C23C16/463 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/5096 ,  H01L21/67109

摘要： The present invention provides systems, methods and apparatus for heating substrates in a processing chamber to temperatures up to at least 700.degree. C. In accordance with an embodiment of the invention a heater assembly with an inner core of high thermal conductivity is encased in a shell of lower thermal conductivity, creating a nearly isothermal interface between the core and shell. The inner core is brazed to the shell, promoting thermal transfer, and acts as a thermal short between opposing surfaces of the shell. The heater assembly is designed to minimize thermal stresses arising from the difference in the thermal expansion coefficients of the various components of the multi-layered heater assembly. In one embodiment of the invention, two independently-powered heating elements are arranged concentrically to each other to create a dual zone heater. A thermal gap in the inner core between the inner and outer heating elements de-couples the zones and provides a more controllable temperature profile at the surface of the heater, including excellent temperature uniformity. In one embodiment, an RF isolator is placed between a heater and a support shaft, allowing the heater to be powered as an electrode in a plasma process.

摘要翻译： 本发明提供了用于将处理室中的衬底加热至至少700℃的温度的系统，方法和设备。根据本发明的实施例，具有高导热性的内芯的加热器组件被包封在壳体 具有较低的导热性，从而在芯和壳之间产生接近等温的界面。 内芯被钎焊到壳体上，促进热传递，并且作为壳体的相对表面之间的热短路。 加热器组件被设计成最小化由多层加热器组件的各种部件的热膨胀系数的差异引起的热应力。 在本发明的一个实施例中，两个独立供电的加热元件彼此同心地布置以产生双区加热器。 内部加热元件和外部加热元件之间的内部芯片的热间隙使这些区域脱耦并在加热器表面提供更可控的温度分布，包括优异的温度均匀性。 在一个实施例中，RF隔离器被放置在加热器和支撑轴之间，允许加热器在等离子体工艺中作为电极供电。

公开(公告)号：US5994678A

公开(公告)日：1999-11-30

申请号：US798004

申请日：1997-02-12

申请人： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Charles Dornfest ,  Stefan Wolff ,  Lee Luo ,  Eller Juco

发明人： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin ,  Charles Dornfest ,  Stefan Wolff ,  Lee Luo ,  Eller Juco

IPC分类号： C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  H05B3/06 ,  C23C16/00

CPC分类号： C23C16/463 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/5096

摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

摘要翻译： 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许通过腔室的15升/分钟的流速具有最小的背侧沉积并且最小化在室的底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。