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    SELF-REFERENCED MRAM CELL THAT CAN BE READ WITH REDUCED POWER CONSUMPTION
    11.
    发明申请
    SELF-REFERENCED MRAM CELL THAT CAN BE READ WITH REDUCED POWER CONSUMPTION 有权
    自动参考的MRAM电池可以读取降低功耗

    公开(公告)号：US20160012874A1

    公开(公告)日：2016-01-14

    申请号：US14772916

    申请日：2014-02-21

    Applicant: CROCUS TECHNOLOGY SA

    Inventor： Quentin Stainer

    IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

    CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

    Abstract: Self-referenced magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a sense layer; a storage layer having a storage magnetization; a tunnel barrier layer between the sense and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature. The sense layer includes a first sense layer having a first sense magnetization, a second sense layer having a second sense magnetization and spacer layer between the first and second sense layers. The MRAM cell can be read with low power consumption.

    Abstract translation: 自参考磁性随机存取存储器（MRAM）单元，包括包括感测层的磁性隧道结; 具有存储磁化的存储层; 感测层和存储层之间的隧道势垒层; 和反铁磁层交换耦合存储层，使得当反铁磁层低于临界温度时，可以固定存储磁化，并且当反铁磁层在等于或高于临界温度时被加热而自由变化。 感测层包括具有第一感测磁化的第一感测层，具有第二感测磁化的第二感测层和在第一和第二感测层之间的间隔层。 可以以低功耗读取MRAM单元。

    SELF-REFERENCED MAGNETIC RANDOM ACCESS MEMORY ELEMENT COMPRISING A SYNTHETIC STORAGE LAYER
    12.
    发明申请
    SELF-REFERENCED MAGNETIC RANDOM ACCESS MEMORY ELEMENT COMPRISING A SYNTHETIC STORAGE LAYER 有权
    自适应磁带随机存取元件包含合成存储层

    公开(公告)号：US20130148419A1

    公开(公告)日：2013-06-13

    申请号：US13711820

    申请日：2012-12-12

    Applicant: Crocus Technology SA

    Inventor： Ioan Lucian Prejbeanu ,  Lucien Lombard ,  Quentin Stainer ,  Kenneth Mackay

    IPC: G11C11/16

    CPC classification number: G11C11/161 ,  G01R33/093 ,  G01R33/098 ,  G11C11/15 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10

    Abstract: The present disclosure concerns a MRAM element comprising a magnetic tunnel junction comprising: a storage layer, a sense layer, and a tunnel barrier layer included between the storage layer and the sense layer; the storage layer comprising a first magnetic layer having a first storage magnetization; a second magnetic layer having a second storage magnetization; and a non-magnetic coupling layer separating the first and second magnetic layers such that the first storage magnetization is substantially antiparallel to the second storage magnetization; the first and second magnetic layers being arranged such that: at a read temperature the first storage magnetization is substantially equal to the second storage magnetization; and at a write temperature which is higher than the read temperature the second storage magnetization is larger than the first storage magnetization. The disclosed MRAM element generates a low stray field when the magnetic tunnel junction is cooled at a low temperature.

    Abstract translation: 本公开涉及一种包括磁性隧道结的MRAM元件，包括：存储层，感测层和包括在存储层和感测层之间的隧道势垒层; 所述存储层包括具有第一存储磁化的第一磁性层; 具有第二存储磁化的第二磁性层; 以及分离所述第一和第二磁性层的非磁性耦合层，使得所述第一存储磁化基本上反平行于所述第二存储磁化; 第一和第二磁性层布置成使得在读取温度下，第一存储磁化基本上等于第二存储磁化; 并且在写入温度高于读取温度时，第二存储磁化强度大于第一存储磁化强度。 当磁性隧道结在低温下被冷却时，所公开的MRAM元件产生低杂散场。

    MLU-BASED MAGNETIC DEVICE HAVING AN AUTHENTICATION AND PHYSICAL UNCLONABLE FUNCTION AND AUTHENTICATION METHOD USING SAID MLU DEVICE
    14.
    发明申请
    MLU-BASED MAGNETIC DEVICE HAVING AN AUTHENTICATION AND PHYSICAL UNCLONABLE FUNCTION AND AUTHENTICATION METHOD USING SAID MLU DEVICE 有权

    公开(公告)号：US20210110023A1

    公开(公告)日：2021-04-15

    申请号：US16982099

    申请日：2019-03-18

    Applicant: Crocus Technology SA

    Inventor： Quentin Stainer ,  Myckael Mouchel ,  Yann Conraux

    IPC: G06F21/44 ,  H04L9/32 ,  G06G7/12

    Abstract: A MLU-based magnetic device including a plurality of MLU-based magnetic cells, each MLU cell including a first ferromagnetic layer having a first magnetization, a second ferromagnetic layer having a second magnetization, and a spacing layer between the first and second ferromagnetic layers. An input device is configured for generating an input signal adapted for changing the orientation of the first magnetization relative to the second magnetization and vary a resistance of the MLU device. A bit line is configured for passing a sense signal adapted for measuring the resistance. A processing unit is configured for computing an electrical variation from the sense signal and outputting an electrical variation signature. The present disclosure further pertains to an authentication method for reading the MLU device.

    SELF-REFERENCED MRAM CELL AND MAGNETIC FIELD SENSOR COMPRISING THE SELF-REFERENCED MRAM CELL
    17.
    发明申请
    SELF-REFERENCED MRAM CELL AND MAGNETIC FIELD SENSOR COMPRISING THE SELF-REFERENCED MRAM CELL 有权

    公开(公告)号：US20170243625A1

    公开(公告)日：2017-08-24

    申请号：US15516098

    申请日：2015-09-24

    Applicant: CROCUS Technology SA

    Inventor： Quentin Stainer

    IPC: G11C11/16 ,  G01R33/09

    CPC classification number: G11C11/1675 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1673

    Abstract: A self-referenced MRAM cell including a reference layer having a fixed reference magnetization, a sense layer having a free sense magnetization, a tunnel barrier, a biasing layer having bias magnetization and a biasing antiferromagnetic layer pinning the bias magnetization in a bias direction when MRAM cell is at temperature equal or below a bias threshold temperature. The bias magnetization is arranged for inducing a bias field adapted for biasing the sense magnetization in a direction opposed to the bias direction, such that the biased sense magnetization varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization. The present disclosure further concerns a magnetic field sensor including a plurality of the self-referenced MRAM cell and a method for programming the magnetic field sensor.

    MRAM-based programmable magnetic device for generating random numbers
    19.
    发明授权
    MRAM-based programmable magnetic device for generating random numbers 有权

    公开(公告)号：US10191719B2

    公开(公告)日：2019-01-29

    申请号：US15552508

    申请日：2016-02-22

    Applicant: CROCUS Technology SA

    Inventor： Sebastien Bandiera ,  Quentin Stainer

    IPC: G06F7/58

    Abstract: A programmable magnetic device for generating random numbers during a programming operation, including an array of a plurality of magnetic tunnel junctions. Each magnetic tunnel junction includes a reference layer having a reference magnetization; a tunnel barrier layer; and a storage layer having a storage magnetization. The programmable magnetic device is arranged such that, during the programming operation, the storage magnetization is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.

    Magnetic device configured to perform an analog adder circuit function and method for operating such magnetic device
    20.
    发明授权
    Magnetic device configured to perform an analog adder circuit function and method for operating such magnetic device 有权

    公开(公告)号：US10157652B2

    公开(公告)日：2018-12-18

    申请号：US15578841

    申请日：2016-05-31

    Applicant: CROCUS Technology SA

    Inventor： Quentin Stainer

    IPC: G11C11/00 ,  G11C11/16 ,  H03F15/00 ,  G06G7/14 ,  H01F10/32 ,  H01L43/08

    Abstract: A magnetic device configured to perform an analog adder circuit function and including a plurality of magnetic units. Each magnetic unit includes n magnetic tunnel junctions electrically connected in series via a current line. Each magnetic tunnel junction includes a storage magnetic layer having a storage magnetization, a sense magnetic layer having a sense magnetization, and a tunnel barrier layer. Each magnetic unit also includes n input lines, each being configured to generate a magnetic field adapted for varying a direction of the sense magnetization and a resistance of the n magnetic tunnel junctions, based on an input. Each of the n magnetic units is configured to add said n inputs to generate an output signal that varies in response to the n resistances.

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