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公开(公告)号：US20130168395A1
公开(公告)日：2013-07-04
申请号：US13340776
申请日：2011-12-30
CPC分类号： B65D79/02 , A61J1/03 , A61J2200/72 , B65D41/04 , B65D55/10 , B65D2213/00
摘要： Method and apparatus to provide a self-locking container to prevent unwanted access to materials stored in the container as a result of exposure to conditions that compromise the effectiveness or safety of the materials. A container may be threaded to receive a threaded lid, and the container may comprise a bolt movable within a channel from a retracted position, which allows the lid to be threadably connected or removed, to a locked position, which prevents removal of the lid. The bolt is movable to the locked position by a drive member, such as a bimetallic strip or a shape-memory element that drive the bolt in response to exposure to the condition that compromises the material.
摘要翻译： 提供自锁容器的方法和装置，以防止由于暴露于损害材料的有效性或安全性的条件而导致存储在容器中的材料的不期望的访问。 容器可以是螺纹以接收带螺纹的盖子，并且容器可以包括螺栓，该螺栓可在通道内从缩回位置移动，该缩回位置允许盖子被螺纹连接或移除到锁定位置，从而防止盖子移除。 螺栓通过驱动构件（例如双金属条或形状记忆元件）可移动到锁定位置，该双金属条或形状记忆元件响应于暴露于损害材料的状况而驱动螺栓。
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公开(公告)号：US20120189767A1
公开(公告)日：2012-07-26
申请号：US13432037
申请日：2012-03-28
申请人： Lawrence A. Clevenger , Zhengwen Li , Kevin S. Petrarca , Roger A. Quon , Carl J. Radens , Brian C. Sapp
发明人： Lawrence A. Clevenger , Zhengwen Li , Kevin S. Petrarca , Roger A. Quon , Carl J. Radens , Brian C. Sapp
CPC分类号： B81C1/00698 , B81B2201/0292
摘要： A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.
摘要翻译： 连续的深沟槽包括在一对第一平行侧壁之间具有恒定宽度的第一沟槽部分，第二沟槽部分和第三沟槽部分各自具有比第一沟槽部分更大的宽度并横向连接到第一沟槽部分。 使用非共形沉积工艺来形成导电层，该导电层在邻接的深沟槽部分内具有锥形几何形状，使得导电层不存在于邻接的深沟槽的底表面上。 形成间隙填充层以堵塞第一沟槽部分中的空间。 将导电层图案化为在第一沟槽部分内具有锥形垂直部分的两个导电板。 在去除间隙填充层的剩余部分之后，形成在导电板的锥形垂直部分之间具有小间隔距离的装置。
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公开(公告)号：US20100319962A1
公开(公告)日：2010-12-23
申请号：US12488948
申请日：2009-06-22
申请人： Lawrence A. Clevenger , Zhengwen Li , Kevin S. Petrarca , Roger A. Quon , Carl J. Radens , Brian C. Sapp
发明人： Lawrence A. Clevenger , Zhengwen Li , Kevin S. Petrarca , Roger A. Quon , Carl J. Radens , Brian C. Sapp
CPC分类号： B81C1/00698 , B81B2201/0292
摘要： A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.
摘要翻译： 连续的深沟槽包括在一对第一平行侧壁之间具有恒定宽度的第一沟槽部分，第二沟槽部分和第三沟槽部分各自具有比第一沟槽部分更大的宽度并横向连接到第一沟槽部分。 使用非共形沉积工艺来形成导电层，该导电层在邻接的深沟槽部分内具有锥形几何形状，使得导电层不存在于邻接的深沟槽的底表面上。 形成间隙填充层以堵塞第一沟槽部分中的空间。 将导电层图案化为在第一沟槽部分内具有锥形垂直部分的两个导电板。 在去除间隙填充层的剩余部分之后，形成在导电板的锥形垂直部分之间具有小间隔距离的装置。
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公开(公告)号：US07759188B2
公开(公告)日：2010-07-20
申请号：US12002828
申请日：2007-12-19
IPC分类号： H01L21/8242
CPC分类号： H01L27/1203 , H01L21/84 , H01L29/66666 , H01L29/78642
摘要： A method of fabricating a vertical field effect transistor (“FET”) is provided which includes a transistor body region and source and drain regions disposed in a single-crystal semiconductor-on-insulator (“SOI”) region of a substrate adjacent a sidewall of a trench. The substrate includes a buried insulator layer underlying the SOI region and a bulk region underlying the buried insulator layer. A buried strap conductively connects the SOI region to a lower node disposed below the SOI region and a body contact extends from the transistor body region to the bulk region of the substrate, the body contact being insulated from the buried strap.
摘要翻译： 提供一种制造垂直场效应晶体管（“FET”）的方法，其包括晶体管本体区域和设置在邻近侧壁的衬底的单晶半导体绝缘体（“SOI”）区域中的源极和漏极区域 的沟渠 衬底包括在SOI区域下面的掩埋绝缘体层和埋在掩埋绝缘体层下面的主体区域。 掩埋带导电地将SOI区域连接到设置在SOI区域下方的下部节点，并且主体接触从晶体管本体区域延伸到衬底的主体区域，身体接触部与掩埋带绝缘。
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15.发明授权Self-aligned strap for embedded trench memory on hybrid orientation substrate 失效用于混合取向基板上嵌入式沟槽存储器的自对准带公开(公告)号：US07737482B2
公开(公告)日：2010-06-15
申请号：US11538982
申请日：2006-10-05
IPC分类号： H01L29/76
CPC分类号： H01L27/1203 , H01L21/743 , H01L21/84 , H01L27/10829 , H01L27/10867 , H01L27/1087 , H01L27/1207 , H01L29/78
摘要： Structures including a self-aligned strap for embedded trench memory (e.g., trench capacitor) on hybrid orientation technology (HOT) substrate, and related method, are disclosed. One structure includes a hybrid orientation substrate including a semiconductor-on-insulator (SOI) section and a bulk semiconductor section; a transistor over the SOI section; a trench capacitor in the bulk semiconductor section; and a self-aligned strap extending from a source/drain region of the transistor to an electrode of the trench capacitor. The method does not require additional masks to generate the strap, results in a self-aligned strap and improved device performance. In one embodiment, the strap is a silicide strap.
摘要翻译： 公开了包括用于混合取向技术（HOT）衬底上的嵌入式沟槽存储器（例如，沟槽电容器）的自对准带的结构以及相关方法。 一种结构包括：包含绝缘体上半导体（SOI）部分和体半导体部分的混合取向衬底; SOI部分上的晶体管; 体半导体部分中的沟槽电容器; 以及从晶体管的源极/漏极区域延伸到沟槽电容器的电极的自对准带。 该方法不需要额外的掩模来生成带，导致自对准带和改进的设备性能。 在一个实施例中，带是硅化物带。
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公开(公告)号：US07732288B2
公开(公告)日：2010-06-08
申请号：US12367764
申请日：2009-02-09
申请人： Huilong Zhu , Lawrence A. Clevenger , Omer H. Dokumaci , Oleg Gluschenkov , Kaushik A. Kumar , Carl J. Radens , Dureseti Chidambarrao
发明人： Huilong Zhu , Lawrence A. Clevenger , Omer H. Dokumaci , Oleg Gluschenkov , Kaushik A. Kumar , Carl J. Radens , Dureseti Chidambarrao
IPC分类号： H01L29/76 , H01L31/062
CPC分类号： H01L29/0843 , H01L21/26506 , H01L21/26586 , H01L29/6653 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： A method for fabricating a semiconductor structure. The novel transistor structure comprises first and second source/drain (S/D) regions whose top surfaces are lower than a top surface of the channel region of the transistor structure. A semiconductor layer and a gate stack on the semiconductor layer are provided. The semiconductor layer includes (i) a channel region directly beneath the gate stack, and (ii) first and second semiconductor regions essentially not covered by the gate stack, and wherein the channel region is disposed between the first and second semiconductor regions. The first and second semiconductor regions are removed. Regions directly beneath the removed first and second semiconductor regions are removed so as to form first and second source/drain regions, respectively, such that top surfaces of the first and second source/drain regions are below a top surface of the channel region.
摘要翻译： 一种半导体结构的制造方法。 新颖的晶体管结构包括顶表面低于晶体管结构的沟道区的顶表面的第一和第二源极/漏极（S / D）区域。 提供半导体层上的半导体层和栅极堆叠。 半导体层包括（i）栅极叠层正下方的沟道区，以及（ii）基本上不被栅极叠层覆盖的第一和第二半导体区，并且其中沟道区设置在第一和第二半导体区之间。 去除第一和第二半导体区域。 除去去除的第一和第二半导体区域正下方的区域，以便分别形成第一和第二源极/漏极区域，使得第一和第二源极/漏极区域的顶表面在通道区域的顶表面之下。
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17.发明申请Method of multi-port memory fabrication with parallel connected trench capacitors in a cell 失效在单元中并联连接沟槽电容器的多端口存储器制造方法公开(公告)号：US20090176339A1
公开(公告)日：2009-07-09
申请号：US12316748
申请日：2008-12-16
IPC分类号： H01L21/8242
CPC分类号： G11C8/16 , G11C11/405 , G11C11/4097 , H01L27/0207 , H01L27/108 , H01L27/10861
摘要： A method is provided for fabricating a multi-port memory in which a plurality of parallel connected capacitors are in a cell. A plurality of trench capacitors are formed which have capacitor dielectric layers extending along walls of the plurality of trenches, the plurality of trench capacitors having first capacitor plates and second capacitor plates opposite the capacitor dielectric layers from the first capacitor plates. The first capacitor plates are conductively tied together and the second capacitor plates are conductively tied together. In this way, the first capacitor plates are adapted to receive a same variable voltage and the second capacitor plates are adapted to receive a same fixed voltage.
摘要翻译： 提供了一种用于制造其中多个并联电容器在单元中的多端口存储器的方法。 形成多个沟槽电容器，其具有沿多个沟槽的壁延伸的电容器电介质层，所述多个沟槽电容器具有第一电容器板和与第一电容器板相对的电容器电介质层的第二电容器板。 第一电容器板导电地连接在一起，并且第二电容器板被导电地连接在一起。 以这种方式，第一电容器板适于接收相同的可变电压，并且第二电容器板适于接收相同的固定电压。
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公开(公告)号：US20090142894A1
公开(公告)日：2009-06-04
申请号：US12367764
申请日：2009-02-09
申请人： Huilong Zhu , Lawrence A. Clevenger , Omer H. Dokumaci , Oleg Gluschenkov , Kaushik A. Kumar , Carl J. Radens , Dureseti Chidambarrao
发明人： Huilong Zhu , Lawrence A. Clevenger , Omer H. Dokumaci , Oleg Gluschenkov , Kaushik A. Kumar , Carl J. Radens , Dureseti Chidambarrao
IPC分类号： H01L21/336
CPC分类号： H01L29/0843 , H01L21/26506 , H01L21/26586 , H01L29/6653 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： A method for fabricating a semiconductor structure. The novel transistor structure comprises first and second source/drain (S/D) regions whose top surfaces are lower than a top surface of the channel region of the transistor structure. A semiconductor layer and a gate stack on the semiconductor layer are provided. The semiconductor layer includes (i) a channel region directly beneath the gate stack, and (ii) first and second semiconductor regions essentially not covered by the gate stack, and wherein the channel region is disposed between the first and second semiconductor regions. The first and second semiconductor regions are removed. Regions directly beneath the removed first and second semiconductor regions are removed so as to form first and second source/drain regions, respectively, such that top surfaces of the first and second source/drain regions are below a top surface of the channel region.
摘要翻译： 一种半导体结构的制造方法。 新颖的晶体管结构包括顶表面低于晶体管结构的沟道区的顶表面的第一和第二源极/漏极（S / D）区域。 提供半导体层上的半导体层和栅极堆叠。 半导体层包括（i）栅极叠层正下方的沟道区，以及（ii）基本上不被栅极叠层覆盖的第一和第二半导体区，并且其中沟道区设置在第一和第二半导体区之间。 去除第一和第二半导体区域。 除去去除的第一和第二半导体区域正下方的区域，以便分别形成第一和第二源极/漏极区域，使得第一和第二源极/漏极区域的顶表面在通道区域的顶表面之下。
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公开(公告)号：US20080286909A1
公开(公告)日：2008-11-20
申请号：US11867840
申请日：2007-10-05
申请人： Huilong Zhu , Lawrence A. Clevenger , Omer H. Dokumaci , Kaushik A. Kumar , Carl J. Radens , Dureseti Chidambarrao
发明人： Huilong Zhu , Lawrence A. Clevenger , Omer H. Dokumaci , Kaushik A. Kumar , Carl J. Radens , Dureseti Chidambarrao
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L29/1083 , H01L29/66795
摘要： A novel transistor structure and method for fabricating the same. First, a substrate, a semiconductor region, a gate dielectric region, and a gate block are provided. The semiconductor region, the gate dielectric region, and the gate block are on the substrate. The gate dielectric region is sandwiched between the semiconductor region and the gate block. The semiconductor region is electrically insulated from the gate block by the gate dielectric region. The semiconductor region and the gate dielectric region share an interface surface which is essentially perpendicular to a top surface of the substrate. The semiconductor region and the gate dielectric region do not share any interface surface that is essentially parallel to a top surface of the substrate. Next, a gate region is formed from the gate block. Then, first and second source/drain regions are formed in the semiconductor region.
摘要翻译： 一种新颖的晶体管结构及其制造方法。 首先，提供衬底，半导体区域，栅极介质区域和栅极块。 半导体区域，栅极电介质区域和栅极块在衬底上。 栅极电介质区域夹在半导体区域和栅极块之间。 半导体区域通过栅极电介质区域与栅极块电绝缘。 半导体区域和栅极电介质区域共享基本上垂直于衬底顶表面的界面。 半导体区域和栅极介电区域不共享基本上平行于衬底顶表面的任何界面表面。 接下来，从栅极块形成栅极区域。 然后，在半导体区域中形成第一和第二源极/漏极区域。
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公开(公告)号：US07439559B2
公开(公告)日：2008-10-21
申请号：US11469039
申请日：2006-08-31
IPC分类号： H01L29/74
CPC分类号： H01L29/78642 , H01L27/10864 , H01L27/1087
摘要： A method of forming a memory cell having a trench capacitor and a vertical transistor in a semiconductor substrate includes a step of providing a bonded semiconductor wafer having a lower substrate with an [010] axis parallel to a first wafer axis and an upper semiconductor layer having an [010] axis oriented at forty-five degrees with respect to the wafer axis, the two being connected by a layer of bonding insulator; etching a trench through the upper layer and lower substrate; enlarging the lower portion of the trench and converting the cross section of the upper portion of the trench from octagonal to rectangular, so that sensitivity to alignment errors between the trench lithography and the active area lithography is reduced. An alternative version employs a bonded semiconductor wafer having a lower substrate formed from a (111) crystal structure and the same upper portion. Applications include a vertical transistor that becomes insensitive to misalignment between the trench and the lithographic pattern for the active area, in particular a DRAM cell with a vertical transistor.
摘要翻译： 在半导体衬底中形成具有沟槽电容器和垂直晶体管的存储单元的方法包括提供具有平行于第一晶片轴的[010]轴的下基板的接合半导体晶片的步骤，以及具有 相对于晶片轴线定向成四十五度的[010]轴，两者通过一层粘合绝缘体连接; 蚀刻通过上层和下衬底的沟槽; 扩大沟槽的下部并将沟槽的上部的横截面从八边形转换为矩形，从而降低对沟槽光刻和有源区光刻之间对准误差的敏感性。 替代方案采用具有由（111）晶体结构和相同上部形成的下基板的键合半导体晶片。 应用包括对于有源区域，特别是具有垂直晶体管的DRAM单元对沟槽和光刻图案之间的未对准变得不敏感的垂直晶体管。
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