Abstract:
A heat-dissipating device includes a MOSFET heat dissipator, a south bridge heat dissipator, a north bridge heat dissipator and a water block connector. A heat pipe is provided between each heat dissipator to connect these heat dissipators in series. Further, the north bridge heat dissipator has a heat-dissipating bottom plate and a heat-dissipating body attached to a half portion of the heat-dissipating bottom plate. Further, the water block connector comprises a hollow base and two connecting tubes that are provided on two locations of the base and in communication with each other. The base of the water block connector is attached to the other half portion of the heat-dissipating bottom plate of the north bridge heat dissipater. When the water cooling is used, the two connecting tubes of the water block connector can be connected in series with a water-cooling circulation system.
Abstract:
A cooling device for interface card for cooling a heating component on an interface card includes a heat sink and a water cooling head, wherein the heat sink has a heat conducting seat and a plurality of cooling fins. A cooling flow path is formed between any two adjacent cooling fins. In addition, the water block is attached onto the plural cooling fins of the heat sink. Thereby, the operational heat, generated from the heating element, is firstly absorbed by the heat-conducting seat and is then distributed uniformly cross to the plural fins. In addition to the heat dissipation proceeded between the fins and the ambient air, the operational heat is further conducted to the water block, undergoing a heat exchange with the coolant flowing in the water block, and thus a desired cooling effectiveness is achieved.
Abstract:
A water-cooling heat dissipator mounted on an electronic heat-generating element includes a water-cooling head member and at least one heat pipe. The water-cooling head member includes a first cover and a second cover connected to the first cover. Both ends of the first cover and the second cover are formed with a receiving portion corresponding to each other, respectively. The receiving portions are adapted to be connected to the conduit connectors. A channel portion is formed between the first cover and the second cover for receiving one end of the heat pipe. With the above arrangement, the present invention can perform the heat dissipations of different heat-generating elements simultaneously to make the heat-generating elements operate under acceptable working temperatures. Further, the present invention can be widely used in the heat dissipation of compact electronic products.
Abstract:
A method for cleaning a silicon wafer by a wet bench method with improved cleaning efficiency and without oxide formation is disclosed. In the method, the wafer may first be cleaned in a first cleaning solution that includes a base or an acid, and then the wafer is rinsed in a second solution that includes DI water and ozone. The ozone concentration in the DI water may be between about 1 ppm and about 20 ppm, and preferably between about 3 ppm and about 10 ppm. A diluted HF cleaning step may be utilized after the ozone/DI water rinsing step to remove any possible oxide formation on the silicon surface before a final rinsing step and drying step.
Abstract:
A method for cleaning a semiconductor substrate. Introduced into a semiconductor substrate processing chamber is a semiconductor substrate. The semiconductor substrate and the semiconductor substrate processing chamber are maintained at a temperature not exceeding about 800 degrees centigrade. Introduced substantially simultaneously with the semiconductor substrate into the semiconductor substrate processing chamber is a low flow of a first oxidant gas. Introduced into the semiconductor substrate processing chamber immediately subsequent to the low flow of the first oxidant gas is a high flow of a second oxidant gas. Introduced into the semiconductor wafer processing chamber no earlier than the high flow of the second oxidant gas is a flow of a chlorine containing getter material. The semiconductor substrate is exposed to the high flow of the second oxidant gas and the flow of the chlorine containing getter material at a temperature not exceeding 800 degrees centigrade for a time period sufficient to remove organic contaminant residues and metal ion contaminant residues from the surface of the semiconductor substrate.
Abstract:
The disclosure relates to a charging system, which includes a crankshaft chamber, two cylinder chambers, a crankshaft connecting rod mechanism, two pistons, an intake pipe, two draft tubes, and a rotating rod control mechanism. The crankshaft connecting rod mechanism is installed in the crankshaft chamber. Each piston is received in the cylinder chambers and connected with the crankshaft connecting rod mechanism. The intake pipe only communicates with the crankshaft chamber. One end of each draft tube only communicates with the crankshaft chamber and another end only communicates with each cylinder chamber. The check valve is installed in the crankshaft chamber. The rotating rod control mechanism includes a rotating rod and a sealing block fixedly connected and rotating with the rotating rod. The sealing block blocks and seals a joint between the crankshaft chamber and each draft tube.
Abstract:
A heat dissipating module includes a first heat conducting plate, a second heat conducting plate and at least one heat pipe. The second heat conducting plate is disposed opposite to the first heat conducting plate. Each of the at least one heat pipe includes a first fixing portion, a first curved portion, a second fixing portion, a second curved portion and a connecting portion. The first fixing portion is positioned on the first heat conducting plate and the second fixing portion is positioned on the second heat conducting plate. The first curved portion is curved and extended from the first fixing portion. The second curved portion is curved and extended from the second fixing portion. The connecting portion is connected between the first curved portion and the second curved portion. At least parts of the first curved portion and at least parts of the second curved portion are not coplanar.
Abstract:
The water-cooling heat dissipation alarm system according to the present invention comprises a water-cooling heat dissipation system and an alarm device, in which the water-cooling heat dissipation system is mutually connected to a water block, a heat exchanger, a water tank and a circulation pump through the pipe, wherein the circulation pump outputs a frequency signal being in proportional to the rotation speed thereof. The alarm device is placed in the circulation pump, which receives the frequency signal outputted from the circulation pump and determines action conditions in the water flow and the circulation pump, then performs alarm operation based the determination in order to provide precise system abnormality alarm.
Abstract:
A cooling structure for interface card for cooling the heating component on an interface card includes a heat sink, a metallic hood, and a water block, wherein the heat sink has a heat conducting seat and a plurality of cooling fins, while the heat conducting seat is attached to the heating component of the interface card. Furthermore, the metallic hood arranged on the heat sink is connected thereto. Finally, the water block is arranged on the metallic hood; thereby, the operational heat, generated from the heating element, is absorbed by the heat-conducting seat and is then conducted to the fins of the heat sink, so that the operational heat is distributed to the metallic hood by heat conducting process, making the operational heat that is generated by the heating component carried away through the heat exchanging function of the water block, and thus a desired cooling effectiveness is achieved.
Abstract:
A water block includes a first casing, a solder paste, and a second casing. The first casing has a solder reserve area formed on an outer edge thereof. The solder paste is coated on the solder reserve area. The second casing is jointed with the first casing via the solder past to form a channel space. The present invention uses tin solder as a soldering material, so that the soldering temperature is between 200° C. and 400° C. Hence, the present invention avoids oxygenation and weakened bond strength due to high temperatures. Therefore, when the solder paste melts, the flux separates from the tin solder and bubbles of the tin solder are removed from the solder reserve area at a soldering temperature of between 200˜400° C. Moreover, the bond strength of the joint surface between two casings is increased, so cooling liquids won't easily leak out from the strong joint surface.