公开(公告)号：US07486546B2

公开(公告)日：2009-02-03

申请号：US11806636

申请日：2007-06-01

Applicant: Min-Chuan Wang ,  Chih-Sheng Lin ,  Chia-Pao Chang ,  Keng-Li Su

Inventor： Min-Chuan Wang ,  Chih-Sheng Lin ,  Chia-Pao Chang ,  Keng-Li Su

IPC: G11C11/00

CPC classification number: G11C7/062 ,  G11C7/06 ,  G11C11/1673 ,  G11C11/5607 ,  G11C2207/063 ,  G11C2211/5634 ,  G11C2211/5645

Abstract: The invention provides a multi-state sense amplifier, coupled to at least one memory cell with changeable resistance and a plurality of reference cells. The first current mirror circuit, coupled to the output terminal of the memory cell, generates a second memory cell current at a first node according to a first memory cell current through the memory cell. The second current mirror circuit, coupled to the output terminal of the reference cells, generates a plurality of second reference currents at a plurality of second nodes according to a plurality of first reference currents through the reference cells. The load circuit, coupled to the first node, the second nodes, and a ground, provides equal loads for the second memory cell current and the second reference currents to respectively generate a memory cell voltage at the first node and a plurality of reference voltages at the second nodes.

Abstract translation: 本发明提供一种多状态读出放大器，耦合到具有可变电阻的至少一个存储单元和多个参考单元。 耦合到存储器单元的输出端的第一电流镜电路根据通过存储单元的第一存储单元电流在第一节点产生第二存储单元电流。 耦合到参考单元的输出端的第二电流镜电路根据通过参考单元的多个第一参考电流在多个第二节点处产生多个第二参考电流。 耦合到第一节点，第二节点和地的负载电路为第二存储器单元电流和第二参考电流提供相等的负载，以分别在第一节点处产生存储单元电压和多个参考电压 第二个节点。

公开(公告)号：US20080007992A1

公开(公告)日：2008-01-10

申请号：US11806636

申请日：2007-06-01

Applicant: Min-Chuan Wang ,  Chih-Sheng Lin ,  Chia-Pao Chang ,  Keng-Li Su

Inventor： Min-Chuan Wang ,  Chih-Sheng Lin ,  Chia-Pao Chang ,  Keng-Li Su

IPC: G11C11/02 ,  G11C7/06

CPC classification number: G11C7/062 ,  G11C7/06 ,  G11C11/1673 ,  G11C11/5607 ,  G11C2207/063 ,  G11C2211/5634 ,  G11C2211/5645

Abstract: The invention provides a multi-state sense amplifier, coupled to at least one memory cell with changeable resistance and a plurality of reference cells. The first current mirror circuit, coupled to the output terminal of the memory cell, generates a second memory cell current at a first node according to a first memory cell current through the memory cell. The second current mirror circuit, coupled to the output terminal of the reference cells, generates a plurality of second reference currents at a plurality of second nodes according to a plurality of first reference currents through the reference cells. The load circuit, coupled to the first node, the second nodes, and a ground, provides equal loads for the second memory cell current and the second reference currents to respectively generate a memory cell voltage at the first node and a plurality of reference voltages at the second nodes.

Abstract translation: 本发明提供一种多状态读出放大器，耦合到具有可变电阻的至少一个存储单元和多个参考单元。 耦合到存储器单元的输出端的第一电流镜电路根据通过存储单元的第一存储单元电流在第一节点产生第二存储单元电流。 耦合到参考单元的输出端的第二电流镜电路根据通过参考单元的多个第一参考电流在多个第二节点处产生多个第二参考电流。 耦合到第一节点，第二节点和接地的负载电路为第二存储器单元电流和第二参考电流提供相等的负载，以分别在第一节点处产生存储器单元电压和多个参考电压 第二个节点。

公开(公告)号：US08507909B2

公开(公告)日：2013-08-13

申请号：US13308523

申请日：2011-11-30

Applicant: Ra-Min Tain ,  Ming-Ji Dai ,  Shyh-Shyuan Sheu ,  Chih-Sheng Lin ,  Shih-Hsien Wu

Inventor： Ra-Min Tain ,  Ming-Ji Dai ,  Shyh-Shyuan Sheu ,  Chih-Sheng Lin ,  Shih-Hsien Wu

IPC: H01L23/58

CPC classification number: G01B7/18 ,  G01L1/18 ,  G01L1/2206 ,  H01L2224/16145

Abstract: A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface. The first heater comprises a plurality of first switches connected in series to generate heat.

Abstract translation: 提供了包括第一芯片，第一电路层，第一加热器，第一应力传感器和第二电路层的测量装置。 第一芯片具有第一通孔硅通孔，第一表面和与第一表面相对的第二表面。 第一电路层设置在第一表面上。 第一加热器和第一应力传感器设置在第一表面上并连接到第一电路层。 第二电路层设置在第二表面上。 第一加热器包括串联连接以产生热量的多个第一开关。

公开(公告)号：US20100176413A1

公开(公告)日：2010-07-15

申请号：US12685350

申请日：2010-01-11

Applicant: Chih-Sheng Lin ,  Che-Hsiung Wu

Inventor： Chih-Sheng Lin ,  Che-Hsiung Wu

IPC: H01L33/00 ,  H01L21/28

CPC classification number: H01L33/46 ,  H01L33/14 ,  H01L33/38

Abstract: A light-emitting diode device includes: a substrate; a light-emitting layered structure formed on the substrate; a multi-functional layer having a first main portion and formed on the light-emitting layered structure for spreading current laterally and for reflecting light emitted from the light-emitting layered structure; and first and second electrodes electrically coupled to the light-emitting layered structure. The first electrode is formed on the light-emitting layered structure and has a first electrode main part. The first main portion of the multi-functional layer is aligned below and is provided with a size larger than that of the first electrode main part.

Abstract translation: 发光二极管装置包括：基板; 形成在基板上的发光层状结构; 具有第一主要部分并形成在发光层状结构上用于横向扩散电流并用于反射从发光层状结构发射的光的多功能层; 以及电耦合到发光层状结构的第一和第二电极。 第一电极形成在发光层状结构上并具有第一电极主体部分。 多功能层的第一主要部分在下方对准并且具有比第一电极主体部分大的尺寸。

公开(公告)号：US07385866B2

公开(公告)日：2008-06-10

申请号：US11347052

申请日：2006-02-03

Applicant: Chih-Sheng Lin ,  Chia-Pao Chang ,  Jan-Ruei Lin

Inventor： Chih-Sheng Lin ,  Chia-Pao Chang ,  Jan-Ruei Lin

IPC: G11C7/02

CPC classification number: G11C7/067 ,  G11C7/062 ,  G11C7/14

Abstract: A memory device is provided. The device comprises a sense amplifier having a cell input terminal and a reference input terminal, a first sub-array coupled to the cell input terminal through a first switch and coupled to the reference input terminal through a second switch, a second sub-array coupled to the cell input terminal through a third switch and coupled to the reference input terminal through a fourth switch, and a reference cell array coupled between the second switch and the fourth switch and coupled to the reference input terminal.

Abstract translation: 提供存储器件。 该器件包括具有单元输入端和参考输入端的读出放大器，通过第一开关耦合到单元输入端并通过第二开关耦合到参考输入端的第一子阵列，第二子阵列耦合 通过第三开关耦合到单元输入端，并通过第四开关耦合到参考输入端，以及耦合在第二开关和第四开关之间并耦合到参考输入端的参考单元阵列。

公开(公告)号：US6147361A

公开(公告)日：2000-11-14

申请号：US163383

申请日：1998-09-30

Applicant: Chih-Sheng Lin ,  Shun-Yi Lee

Inventor： Chih-Sheng Lin ,  Shun-Yi Lee

IPC: H01L23/544 ,  H01L23/58

CPC classification number: G01R31/2858 ,  H01L22/34 ,  H01L2924/0002

Abstract: A polysilicon sensor is described which can be incorporated onto a silicon wafer containing integrated circuits for the purpose of detecting and monitoring electromigration(EM) in metal test stripes representative of the interconnection metallurgy used by the integrated circuits. The sensor capitalizes on the property of silicon whereby a small increase in temperature causes a large increase in carrier concentration. In this regard, the local temperature rise of an adjacent metal line undergoing EM failure manifests itself as a decrease in resistance of the sensor. The sensor is particularly suited for testing multi-level metallurgies such as those having an aluminum alloy sandwiched between metallic layers such as those used for diffusion barriers and anti-reflective coatings. Its fabrication is compatible with conventional MOSFET processes which use a self-aligned polysilicon gate. It can be particularly useful when built into the wafer kerf area or into a manufacturing test site(MTS) where it can be used to qualify the metallization of a particular job. Structures built into the wafer kerf can be tested immediately after metallization while those built into MTS chips can be reserved for long term reliability testing.

Abstract translation: 描述了一种多晶硅传感器，其可以并入到含有集成电路的硅晶片上，目的是检测和监测代表集成电路使用的互连冶金的金属测试条带中的电迁移（EM）。 该传感器利用硅的性质，其中温度的小的增加导致载流子浓度的大幅增加。 在这方面，经历EM故障的相邻金属线的局部温度升高本身就表现为传感器的电阻降低。 该传感器特别适用于测试多层次冶金，例如具有夹在金属层之间的铝合金的那些，例如用于扩散阻挡层和抗反射涂层的那些。 其制造与使用自对准多晶硅栅极的常规MOSFET工艺兼容。 当内置于晶圆切割区域或制造测试点（MTS）中时，特别有用，可用于对特定作业的金属化进行限定。 内置于晶圆切口的结构可以在金属化后立即进行测试，而内置于MTS芯片的结构可以保留用于长期可靠性测试。

公开(公告)号：US5627101A

公开(公告)日：1997-05-06

申请号：US566808

申请日：1995-12-04

Applicant: Chih-Sheng Lin ,  Shun-Yi Lee

Inventor： Chih-Sheng Lin ,  Shun-Yi Lee

IPC: G01R31/28 ,  H01L23/544 ,  H01L21/283 ,  H01L21/66

CPC classification number: G01R31/2858 ,  H01L22/34 ,  G01R31/2853 ,  H01L2924/0002 ,  Y10S438/927

Abstract: A polysilicon sensor is described which can be incorporated onto a silicon wafer containing integrated circuits for the purpose of detecting and monitoring electromigration(EM) in metal test stripes representative of the interconnection metallurgy used by the integrated circuits. The sensor capitalizes on the property of silicon whereby a small increase in temperature causes a large increase in carrier concentration. In this regard, the local temperature rise of an adjacent metal line undergoing EM failure manifests itself as a decrease in resistance of the sensor. The sensor is particularly suited for testing multi-level metallurgies such as those having an aluminum alloy sandwiched between metallic layers such as those used for diffusion barriers and anti-reflective coatings. Its fabrication is compatible with conventional MOSFET processes which use a self-aligned polysilicon gate. It can be particularly useful when built into the wafer kerf area or into a manufacturing test site(MTS) where it can be used to qualify the metallization of a particular job. Structures built into the wafer kerf can be tested immediately after metallization while those built into MTS chips can be reserved for long term reliability testing.

Abstract translation: 描述了一种多晶硅传感器，其可以并入到含有集成电路的硅晶片上，目的是检测和监测代表集成电路使用的互连冶金的金属测试条带中的电迁移（EM）。 该传感器利用硅的性质，其中温度的小的增加导致载流子浓度的大幅增加。 在这方面，经历EM故障的相邻金属线的局部温度升高本身就表现为传感器的电阻降低。 该传感器特别适用于测试多层次冶金，例如具有夹在金属层之间的铝合金的那些，例如用于扩散阻挡层和抗反射涂层的那些。 其制造与使用自对准多晶硅栅极的常规MOSFET工艺兼容。 当内置于晶圆切割区域或制造测试点（MTS）中时，特别有用，可用于对特定作业的金属化进行限定。 内置于晶圆切口的结构可以在金属化后立即进行测试，而内置于MTS芯片的结构可以保留用于长期可靠性测试。

公开(公告)号：US08581419B2

公开(公告)日：2013-11-12

申请号：US12968285

申请日：2010-12-15

Applicant: Keng-Li Su ,  Hsin-Chi Lai ,  Chih-Sheng Lin ,  Zhe-Hui Lin

Inventor： Keng-Li Su ,  Hsin-Chi Lai ,  Chih-Sheng Lin ,  Zhe-Hui Lin

IPC: H01L23/48

CPC classification number: H01L25/0657 ,  H01L23/642 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06537 ,  H01L2225/06541

Abstract: A multi-chip stack structure including a first chip, a second chip, a shielding layer, and a plurality of conductive bumps is provided. The second chip is stacked on the first chip. The second chip has a plurality of through silicon via (TSV) structures to conduct a reference voltage. The shielding layer and the plurality of conductive bumps are disposed between the first chip and the second chip, and are electrically connected to the plurality of TSV structures. The shielding layer can isolate noises and improve signal coupling between two adjacent chips.

Abstract translation: 提供了包括第一芯片，第二芯片，屏蔽层和多个导电凸块的多芯片堆叠结构。 第二芯片堆叠在第一芯片上。 第二芯片具有多个贯穿硅通孔（TSV）结构以导通参考电压。 屏蔽层和多个导电凸块设置在第一芯片和第二芯片之间，并且电连接到多个TSV结构。 屏蔽层可以隔离噪声并改善两个相邻芯片之间的信号耦合。

公开(公告)号：US08236154B2

公开(公告)日：2012-08-07

申请号：US12139883

申请日：2008-06-16

Applicant: Sz-Hau Chen ,  Chih-Sheng Lin ,  Guan-Tin Chen ,  Yueh-Hui Lin ,  Thomas Y. S. Shen

Inventor： Sz-Hau Chen ,  Chih-Sheng Lin ,  Guan-Tin Chen ,  Yueh-Hui Lin ,  Thomas Y. S. Shen

IPC: G01N27/327

CPC classification number: B82Y15/00 ,  B82Y30/00 ,  G01N27/3272

Abstract: The present invention provides a surface-modified electrode strip for measuring an electrochemical signal that is synergistically amplified by means of a nano-scaled gold particle layer and a lipid-soluble electron mediator layer. A biosensor comprising the electrode strip is also provided.

Abstract translation: 本发明提供一种用于测量电化学信号的表面改性电极条，其通过纳米级金颗粒层和脂溶性电子介体层协同放大。 还提供了包括电极条的生物传感器。

公开(公告)号：US08111156B2

公开(公告)日：2012-02-07

申请号：US12262152

申请日：2008-10-30

Applicant: Kai-Tai Song ,  Chia-Hao Lin ,  Chih-Sheng Lin ,  Su-Hen Yang

Inventor： Kai-Tai Song ,  Chia-Hao Lin ,  Chih-Sheng Lin ,  Su-Hen Yang

IPC: G08B13/00

CPC classification number: G08B25/009 ,  G08B13/19645 ,  G08B13/19647

Abstract: This invention is an intruder detection system which integrates wireless sensor network and security robots. Multiple ZigBee wireless sensor modules installed in the environment can detect intruders and abnormal conditions with various sensors, and transmit alert to the monitoring center and security robot via the wireless mesh network. The robot can navigate in the environment autonomously and approach to a target place using its localization system. If any possible intruder is detected, the robot can approach to that location, and transmit images to the mobile devices of the securities and users, in order to determine the exact situation in real time.

Abstract translation: 本发明是一种综合无线传感器网络和安全机器人的入侵者检测系统。 安装在环境中的多个ZigBee无线传感器模块可以通过各种传感器检测入侵者和异常情况，并通过无线网状网络向监控中心和安全机器人发送警报。 机器人可以自主地在环境中导航，并使用其定位系统接近目标地点。 如果检测到任何可能的入侵者，机器人可以接近该位置，并将图像发送到证券和用户的移动设备，以便实时确定确切的情况。