公开(公告)号：US07419843B2

公开(公告)日：2008-09-02

申请号：US11212605

申请日：2005-08-29

申请人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/00

CPC分类号： G01Q70/10 ,  G01Q70/16

摘要： A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

摘要翻译： 一种制造具有电阻尖端的半导体探针的方法。 该方法包括在硅衬底上形成具有矩形形状的第一和第二掩模膜，首先蚀刻硅衬底的上表面，通过蚀刻第一掩模膜形成与尖端颈部的宽度相对应的第三掩模膜，形成 通过使用第三掩模膜作为掩模对硅衬底进行第二次蚀刻，使尖端颈部的宽度达到预定宽度，并且在除去第三掩模膜之后通过退火硅衬底来形成尖端的峰形成部分。 可以制造具有均匀高度的半导体探针和具有均匀颈部宽度的尖端。

公开(公告)号：US20060060779A1

公开(公告)日：2006-03-23

申请号：US11219732

申请日：2005-09-07

申请人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

发明人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： G21K7/00

CPC分类号： G11B9/1409 ,  G01Q60/30 ,  Y10S977/875 ,  Y10S977/878 ,  Y10S977/879

摘要： A semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist layer orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist layer on the substrate to cover a portion of the first photoresist layer and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresist layers; and removing the first and second photoresist layers, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.

摘要翻译： 具有电阻尖端的半导体探针及其制造方法。 该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂层，并且蚀刻所述掩模层使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂层以覆盖所述第一光致抗蚀剂层的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂层覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂层，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

公开(公告)号：US20080030909A1

公开(公告)日：2008-02-07

申请号：US11723567

申请日：2007-03-21

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： G11B5/33 ,  G11B5/127 ,  G11B5/82

CPC分类号： G11B9/02 ,  Y10T29/49032

摘要： An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.

摘要翻译： 提供电场读/写头，其制造方法以及包括电场读/写头的数据读/写装置。 数据读/写装置包括从记录介质读取和写入数据的电场读/写头。 电场读/写头包括半导体衬底，电阻区，源极和漏极区以及写入电极。 半导体衬底包括具有相邻边缘的第一表面和第二表面。 电阻区域形成为从第一表面的一端的中心部分延伸到第二表面。 源极区域和漏极区域形成在电阻区域的两侧并且与第一表面分离。 写电极形成在电阻区上，绝缘层位于写电极和电阻区之间。

公开(公告)号：US08064324B2

公开(公告)日：2011-11-22

申请号：US12126427

申请日：2008-05-23

申请人： Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

发明人： Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

IPC分类号： G11B9/00

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field effect read/write head for recording/reproducing information on/from a ferroelectric recording medium using an electric field effect includes a semiconductor substrate, a recess portion formed in an upper surface of the semiconductor substrate facing the ferroelectric recording medium, and a recording/reproduction portion provided in the recess portion.

摘要翻译： 一种用于使用电场效应从铁电记录介质上记录/再现信息的电场效应读/写头包括半导体衬底，形成在半导体衬底的面对铁电记录介质的上表面的凹部，以及 记录/再现部分。

公开(公告)号：US20090021862A1

公开(公告)日：2009-01-22

申请号：US11957511

申请日：2007-12-17

申请人： Hyoung-soo Ko ,  Chul-min Park ,  Ju-hwan Jung ,  Seung-bum Hong ,  Dae-young Jeon

发明人： Hyoung-soo Ko ,  Chul-min Park ,  Ju-hwan Jung ,  Seung-bum Hong ,  Dae-young Jeon

IPC分类号： G11B5/187 ,  H01L21/336 ,  H01L29/78

CPC分类号： G11B9/02 ,  G11B5/6082 ,  H01L29/78

摘要： An electric field read/write head, a method of manufacturing the same, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a resistance region formed in a substrate which comprises an end surface facing a recording medium; a source and a drain formed in the substrate and disposed on both sides of the resistance region, respectively; and an insulating layer and a write electrode formed sequentially on the resistance region, wherein the length (l) to width (w) ratio (l/w) of the resistance region satisfies (l/w)≧0.2.

摘要翻译： 提供电场读/写头，其制造方法和包括电场读/写头的信息存储装置。 电场读/写头包括：形成在基板中的电阻区域，包括面向记录介质的端面; 源极和漏极，分别形成在衬底中并设置在电阻区域的两侧; 以及在电阻区域上依次形成的绝缘层和写入电极，其中电阻区域的长度（1）与宽度（w）比（1 / w）满足（1 / w）> = 0.2。

公开(公告)号：US20070211542A1

公开(公告)日：2007-09-13

申请号：US11604263

申请日：2006-11-27

申请人： Hyoung-soo Ko ,  Seung-bum Hong ,  Dong-ki Min ,  Hong-sik Park

发明人： Hyoung-soo Ko ,  Seung-bum Hong ,  Dong-ki Min ,  Hong-sik Park

IPC分类号： G11C7/10

CPC分类号： G11C29/50 ,  G11C7/10 ,  G11C11/22 ,  G11C2029/5602

摘要： A multi-probe for writing data to and/or reading data from a recording medium. The multi-probe includes a plurality of probes. All of the probes are working probes for writing the data to and/or reading the data from the recording medium.

摘要翻译： 用于将数据写入和/或从记录介质读取数据的多探头。 多探针包括多个探针。 所有探头都是用于将数据写入和/或从记录介质读取数据的工作探头。

公开(公告)号：US20080279062A1

公开(公告)日：2008-11-13

申请号：US11930223

申请日：2007-10-31

申请人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

发明人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

IPC分类号： G11B5/00

CPC分类号： G11B9/02

摘要： Provided are an electric field read/write device and a method of driving an electric field read/write device. The method including an electric field read/write head comprising a resistance region disposed between a source region and a drain region and a writing electrode disposed on the resistance region, wherein the method includes: applying a controlling voltage to the writing electrode, wherein the controlling voltage is smaller than a threshold voltage which causes polarization of a recording medium, and reproducing data recorded in the recording medium according to change of an amount of a current flowing through the resistance region according to a polarization direction of electric domains of the recording medium.

摘要翻译： 提供电场读/写装置和驱动电场读/写装置的方法。 该方法包括：电场读/写头，包括设置在源极区域和漏极区域之间的电阻区域和设置在电阻区域上的写入电极，其中所述方法包括：向所述写入电极施加控制电压，其中所述控制 电压小于导致记录介质的极化的阈值电压，并且根据记录介质的电畴的偏振方向根据流过电阻区域的电流量的变化再现记录在记录介质中的数据。

公开(公告)号：US20080138924A1

公开(公告)日：2008-06-12

申请号：US11872065

申请日：2007-10-15

申请人： Chul-min PARK ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Chul-min PARK ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/44

CPC分类号： G01Q60/30

摘要： A method of manufacturing an electric field sensor having an electric field shield. The method includes providing a substrate doped with a first impurity; forming a resistive tip having a resistance region doped with a low concentration of a second impurity at an apex of a protruding portion of the substrate, and first and second semiconductor electrode regions doped with a high concentration of the second impurity on both slopes of the protruding portion with the resistive region therebetween, wherein the second impurity has a polarity opposite to that of the first impurity; forming a dielectric layer on the resistive tip; forming a mask having a high aspect ratio on the dielectric layer; depositing a metal layer on the dielectric layer; and exposing the dielectric layer formed on the resistance region through the metal layer by removing the mask.

摘要翻译： 一种制造具有电场屏蔽的电场传感器的方法。 该方法包括提供掺杂有第一杂质的衬底; 在所述基板的突出部的顶点形成具有掺杂有低浓度的第二杂质的电阻区域的电阻端头，以及在所述突出部的两个斜面上掺杂有高浓度的所述第二杂质的第一和第二半导体电极区域 其中所述第二杂质具有与所述第一杂质的极性相反的极性; 在电阻尖端上形成电介质层; 在介电层上形成具有高纵横比的掩模; 在介电层上沉积金属层; 并且通过去除掩模，使形成在电阻区域上的电介质层通过金属层曝光。

公开(公告)号：US20100232061A1

公开(公告)日：2010-09-16

申请号：US12300177

申请日：2007-05-10

申请人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Yong-su Kim ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Yong-su Kim ,  Seung-bum Hong

IPC分类号： G11B5/127 ,  H01L21/336 ,  H01L21/78

CPC分类号： G11B9/02

摘要： Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.

摘要翻译： 提供一种用于从信息存储介质的表面电荷读取信息的电场信息读取头，电场信息读取头包括半导体衬底，该半导体衬底具有形成在面向记录的表面的一端的中心部分的电阻区域 介质，电阻区域被轻掺杂杂质，形成在电阻区两侧的源区和漏区，源极区和漏区比电阻区更加掺杂杂质。 源极区域和漏极区域沿着面向记录介质的半导体衬底的表面延伸，并且电极分别与源极区域和漏极区域电连接。 此外，提供了制造电场信息读取头的方法和在晶片上批量生成电场信息读取头的方法。

公开(公告)号：US07659562B2

公开(公告)日：2010-02-09

申请号：US11723567

申请日：2007-03-21

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/34 ,  H01L29/74 ,  H01L31/111 ,  H01L27/14 ,  H01L29/82 ,  H01L29/84 ,  H01L43/00 ,  G11B5/187 ,  G11B9/00

CPC分类号： G11B9/02 ,  Y10T29/49032

摘要： An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.

摘要翻译： 提供电场读/写头，其制造方法以及包括电场读/写头的数据读/写装置。 数据读/写装置包括从记录介质读取和写入数据的电场读/写头。 电场读/写头包括半导体衬底，电阻区，源极和漏极区以及写入电极。 半导体衬底包括具有相邻边缘的第一表面和第二表面。 电阻区域形成为从第一表面的一端的中心部分延伸到第二表面。 源极区域和漏极区域形成在电阻区域的两侧并且与第一表面分离。 写电极形成在电阻区上，绝缘层位于写电极和电阻区之间。