INTEGRATED ON-CHIP POLARIZER
    12.
    发明申请
    INTEGRATED ON-CHIP POLARIZER 有权
    集成在芯片偏振器

    公开(公告)号:US20170003451A1

    公开(公告)日:2017-01-05

    申请号:US14944562

    申请日:2015-11-18

    Abstract: A low loss high extinction ratio on-chip polarizer is disclosed. The polarizer is formed of a mode convertor followed by a mode squeezer and a dump waveguide, and may be configured to pass a desired waveguide mode and reject undesired modes. An embodiment is described that transmits a TE0 mode while blocking a TM0 mode by converting it into a higher-order TEn mode in a waveguide taper, squeezing out the TEn mode in a second waveguide taper to lessen its confinement, and then dumping the TEn mode in a waveguide bend that is configured to pass the TE0 mode.

    Abstract translation: 公开了一种低损耗高消光比片上偏振器。 偏振器由模式转换器,随后是模式压缩器和倾倒波导形成,并且可以被配置为通过期望的波导模式并拒绝不期望的模式。 描述了一种实施例,其通过在波导锥形中将TM0模式转换成高阶TEn模式而阻止TM0模式而发送TE0模式,在第二波导锥度中挤出TEn模式以减小其限制,然后倾倒TEn模式 在配置成通过TE0模式的波导弯管中。

    INTEGRATED POLARIZATION SPLITTER AND ROTATOR
    13.
    发明申请
    INTEGRATED POLARIZATION SPLITTER AND ROTATOR 有权
    集成极化分离器和旋转器

    公开(公告)号:US20160246005A1

    公开(公告)日:2016-08-25

    申请号:US15048107

    申请日:2016-02-19

    Abstract: An integrated polarization splitter and rotator (PSR) employs the TE0 and TE1 modes of propagating light, rather than the TE0 and TM0 modes used in conventional prior art PSR. The integrated PSR exhibits appreciably flatter wavelength response because it does not require a directional coupler to de-multiplex incoming polarizations. The PSR allows tuning of the TM0 loss to reduce polarization dependent loss (PDL). This integrated polarization splitter and rotator is applicable to all integrated platforms including Silicon-on-Insulator (SOI) and III-V semiconductor compound systems. The PSR may be very compact (12×2 μm2), and provides low loss (

    Abstract translation: 集成的偏振分离器和旋转器(PSR)采用传播光的TE0和TE1模式,而不是常规现有技术PSR中使用的TE0和TM0模式。 集成的PSR具有明显的平坦的波长响应,因为它不需要定向耦合器来对入射偏振进行去多路复用。 PSR允许调整TM0损耗以减少偏振相关损耗(PDL)。 该集成偏振分离器和旋转器适用于所有集成平台,包括绝缘体上硅(SOI)和III-V半导体复合系统。 PSR可能非常紧凑(12×2μm2),并提供低损耗(C波段<0.3 dB)和超宽带操作。 PSR还可以更好地控制偏振相关损耗。

    ULTRA-RESPONSIVE PHASE SHIFTERS FOR DEPLETION MODE SILICON MODULATORS
    14.
    发明申请
    ULTRA-RESPONSIVE PHASE SHIFTERS FOR DEPLETION MODE SILICON MODULATORS 有权
    用于隔离模式硅调制器的超声波相位切换器

    公开(公告)号:US20160062156A1

    公开(公告)日:2016-03-03

    申请号:US14840409

    申请日:2015-08-31

    Abstract: A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

    Abstract translation: 描述了基于实验验证的模型的基于载波耗尽的硅调制器的新型移相器设计。 据信,迄今为止忽略不完全电离的作用将对超灵敏移相器产生重大影响。 预期观察到与20dB / cm的低传播损耗相关联的0.3V·cm的低V&pgr L产品。 移相器基于重叠的植入步骤,其中仔细选择剂量和能量以利用反掺杂产生S形结。 该接头具有特别有吸引力的V&pgr; L品质因数,同时实现了极低的电容和光损耗。 这种改进将使得能够构造出显着更小的马赫 - 曾德调制器,尽管如此,驱动电压也将较低,插入损耗也大大降低。 所描述的制造过程具有最小的复杂性; 特别地,不需要高分辨率光刻步骤。

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