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公开(公告)号：US07870357B2
公开(公告)日：2011-01-11
申请号：US12242870
申请日：2008-09-30
IPC分类号： G06F12/00
CPC分类号： G11C7/1039 , G06F13/1626 , G11C7/1006 , G11C7/22 , G11C11/4076 , G11C2207/2218 , G11C2207/229
摘要： A method of operating a memory component that includes a memory core includes receiving, from external control lines, a write command that specifies a write operation. The write command is stored for a first time period after receiving the write command. After the first time period, the write operation is initiated in response to the write command. During the write operation, unmasked portions of received data are written to the memory core, where the unmasked portions of the data are bits of the data that are identified by received mask information as not being masked.
摘要翻译： 一种操作包括存储器核心的存储器组件的方法，包括从外部控制线接收指定写入操作的写入命令。 写命令在接收到写命令后第一个时间段被存储。 在第一时间段之后，响应写入命令启动写入操作。 在写入操作期间，接收数据的未屏蔽部分被写入存储器核心，其中数据的未屏蔽部分是由接收到的掩码信息识别为不被掩蔽的数据的位。
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公开(公告)号：US07581121B2
公开(公告)日：2009-08-25
申请号：US11151791
申请日：2005-06-14
申请人： Richard M. Barth , Ely K. Tsern , Craig E. Hampel , Frederick A. Ware , Todd W. Bystrom , Bradley A. May , Paul G. Davis
发明人： Richard M. Barth , Ely K. Tsern , Craig E. Hampel , Frederick A. Ware , Todd W. Bystrom , Bradley A. May , Paul G. Davis
CPC分类号： G11C7/1072 , G06F1/3225 , G06F13/1689 , G06F13/1694 , G06F13/4239 , G11C7/20 , G11C8/12 , G11C11/4072 , G11C11/4074 , G11C11/4076 , G11C2207/2227 , G11C2207/2254 , Y02D10/151
摘要： A system comprising a storage location to store information representing a timing parameter pertaining to a random access memory device. An integrated circuit device generates a value that is representative of a period of time that elapses between the random access memory device exiting from a power down mode and a time at which the random access memory device is capable of receiving a command. The integrated circuit device generates the value from the information representing the timing parameter pertaining to the random access memory device.
摘要翻译： 一种系统，包括存储位置以存储表示随机存取存储器件的定时参数的信息。 集成电路装置生成代表在从断电模式退出的随机存取存储装置与随机存取存储装置能够接收指令的时间之间经过的时间段的值。 集成电路装置根据表示随机存取存储装置的定时参数的信息生成该值。
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13.发明授权Asynchronous, high-bandwidth memory component using calibrated timing elements 失效异步高带宽内存组件使用校准的时序元素公开(公告)号：US07529141B2
公开(公告)日：2009-05-05
申请号：US12041594
申请日：2008-03-03
IPC分类号： G11C7/00
CPC分类号： G11C7/1051 , G11C7/04 , G11C7/1039 , G11C7/106 , G11C7/1078 , G11C7/1087 , G11C7/22 , G11C29/02 , G11C29/028 , G11C29/50012 , G11C2207/2254
摘要： Disclosed herein are embodiments of an asynchronous memory device that use internal delay elements to enable memory access pipelining. In one embodiment, the delay elements are responsive to an input load control signal, and are calibrated with reference to periodically received timing pulses. Different numbers of the delay elements are configured to produce different asynchronous delays and to strobe sequential pipeline elements of the memory device.
摘要翻译： 这里公开了使用内部延迟元件来启用存储器访问流水线的异步存储器件的实施例。 在一个实施例中，延迟元件响应于输入负载控制信号，并且参考周期性接收的定时脉冲进行校准。 不同数量的延迟元件被配置为产生不同的异步延迟并选择存储器件的顺序流水线元件。
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14.发明授权Integrated circuit memory device having delayed write timing based on read response time 有权具有基于读取响应时间的延迟写入定时的集成电路存储器件公开(公告)号：US07496709B2
公开(公告)日：2009-02-24
申请号：US11953803
申请日：2007-12-10
申请人： Richard M. Barth , Frederick A. Ware , Donald C. Stark , Craig E. Hampel , Paul G. Davis , Abhijit M. Abhyankar , James A. Gasbarro , David Nguyen
发明人： Richard M. Barth , Frederick A. Ware , Donald C. Stark , Craig E. Hampel , Paul G. Davis , Abhijit M. Abhyankar , James A. Gasbarro , David Nguyen
IPC分类号： G06F12/00
CPC分类号： G11C7/22 , G11C7/1006 , G11C7/12 , G11C8/12 , G11C8/18 , G11C11/406 , G11C11/40611 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C2207/2218
摘要： An integrated circuit memory device includes a memory core to store write data, a first set of interconnect resources to receive the write data, and a second set of interconnect resources to receive a write command associated with the write data. Information indicating whether mask information is included with the write command, wherein the mask information, when included in the write command, specifies whether to selectively write portions of the write data to the memory core.
摘要翻译： 集成电路存储器件包括用于存储写入数据的存储器核心，用于接收写入数据的第一组互连资源以及用于接收与写入数据相关联的写入命令的第二组互连资源。 指示掩码信息是否包括在写入命令中的信息，其中当包括在写入命令中时，掩码信息指定是否选择性地将写入数据的部分写入存储器核心。
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公开(公告)号：US07360050B2
公开(公告)日：2008-04-15
申请号：US11681375
申请日：2007-03-02
申请人： Richard M. Barth , Frederick A. Ware , Donald C. Stark , Craig E. Hampel , Paul G. Davis , Abhijit M. Abhyankar , James A. Gasbarro , David Nguyen
发明人： Richard M. Barth , Frederick A. Ware , Donald C. Stark , Craig E. Hampel , Paul G. Davis , Abhijit M. Abhyankar , James A. Gasbarro , David Nguyen
IPC分类号： G06F12/00
CPC分类号： G11C7/22 , G11C7/1006 , G11C7/12 , G11C8/12 , G11C8/18 , G11C11/406 , G11C11/40611 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C2207/2218
摘要： An integrated circuit memory device has a first set of pins to receive, using a clock signal, a row address followed by a column address. The device has a second set of pins to receive, using the clock signal, a sense command and a write command. The sense command specifies that the device activate a row of memory cells identified by the row address. The write command specifies that the memory device receive write data and store the write data at a location, identified by the column address, in the row of memory cells. The write command is posted internally to the memory device after a first delay has transpired from a first time period in which the write command is received at the second set of pins. The write data is received at a third set of pins after a second delay has transpired from the first time period.
摘要翻译： 集成电路存储器件具有第一组引脚，以使用时钟信号接收行地址，后跟列地址。 器件具有第二组引脚，用于使用时钟信号接收检测命令和写入命令。 sense命令指定设备激活由行地址标识的一行存储器单元。 write命令指定存储器件接收写入数据，并将写入数据存储在由列地址标识的存储单元行中的位置。 在从第二组引脚接收写入命令的第一时间段开始第一个延迟之后，将写入命令内部发布到存储器件。 在从第一时间段开始第二延迟之后，在第三组引脚处接收写入数据。
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16.发明授权Method and apparatus for coordinating memory operations among diversely-located memory components 有权用于在不同位置的存储器组件之间协调存储器操作的方法和装置公开(公告)号：US07225311B2
公开(公告)日：2007-05-29
申请号：US10732533
申请日：2003-12-11
IPC分类号： G06F13/00
CPC分类号： G11C11/4076 , G06F1/06 , G06F1/105 , G06F1/12 , G06F3/0604 , G06F3/0658 , G06F3/0673 , G06F13/1684 , G06F13/1689 , G06F13/1694 , G06F13/4086 , G11C5/063 , G11C7/04 , G11C7/1051 , G11C7/1072 , G11C7/1078 , G11C7/22 , G11C7/222 , G11C8/18 , G11C11/409 , G11C11/4096 , G11C29/02 , G11C29/022 , G11C29/023 , G11C29/028 , G11C29/50008 , G11C29/50012
摘要： A memory controller is disclosed. In one particular exemplary embodiment, the memory controller may comprise a first transmitter to output first and second write commands synchronously with respect to a clock signal, a second transmitter to output first data using a first timing offset such that the first data arrives at a first memory device in accordance with a predetermined timing relationship with respect to a first transition of the clock signal, and a third transmitter to output second data using a second timing offset such that the second data arrives at a second memory device in accordance with a predetermined timing relationship with respect to a second transition of the clock signal.
摘要翻译： 公开了一种存储器控制器。 在一个特定的示例性实施例中，存储器控制器可以包括：第一发射器，用于相对于时钟信号同步地输出第一和第二写入命令;第二发射器，使用第一定时偏移来输出第一数据，使得第一数据到达第一 根据与时钟信号的第一次转换相关的预定定时关系，以及第三发送器，使用第二定时偏移来输出第二数据，使得第二数据根据预定定时到达第二存储器装置 关于时钟信号的第二转换。
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公开(公告)号：US07225292B2
公开(公告)日：2007-05-29
申请号：US11219096
申请日：2005-09-01
IPC分类号： G06F12/00
CPC分类号： G11C11/4076 , G06F1/06 , G06F1/105 , G06F1/12 , G06F3/0604 , G06F3/0658 , G06F3/0673 , G06F13/1684 , G06F13/1689 , G06F13/1694 , G06F13/4086 , G11C5/063 , G11C7/04 , G11C7/1051 , G11C7/1072 , G11C7/1078 , G11C7/22 , G11C7/222 , G11C8/18 , G11C11/409 , G11C11/4096 , G11C29/02 , G11C29/022 , G11C29/023 , G11C29/028 , G11C29/50008 , G11C29/50012
摘要： A memory module having a termination component. The memory module includes multiple memory devices, a termination component, a control signal path and multiple data signal paths. The control signal path is coupled to each of the memory devices and the termination component, and extends along the memory devices such that signals propagating on the control signal path propagate past each of the memory devices in succession before reaching the termination component. A unique set of data signal paths is coupled to each of the memory devices.
摘要翻译： 一种具有端接部件的存储器模块。 存储器模块包括多个存储器件，终端元件，控制信号路径和多个数据信号路径。 控制信号路径被耦合到每个存储器件和终端元件，并且沿着存储器件延伸，使得在控制信号路径上传播的信号在到达终端元件之前连续传播通过每个存储器件。 一组唯一的数据信号路径耦合到每个存储器件。
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18.发明授权Method, system and memory controller utilizing adjustable write data delay settings 有权方法，系统和内存控制器利用可调写入数据延迟设置公开(公告)号：US07210016B2
公开(公告)日：2007-04-24
申请号：US11281184
申请日：2005-11-15
IPC分类号： G06F13/20
CPC分类号： G11C11/4076 , G06F1/06 , G06F1/105 , G06F1/12 , G06F3/0604 , G06F3/0658 , G06F3/0673 , G06F13/1684 , G06F13/1689 , G06F13/1694 , G06F13/4086 , G11C5/063 , G11C7/04 , G11C7/1051 , G11C7/1072 , G11C7/1078 , G11C7/22 , G11C7/222 , G11C8/18 , G11C11/409 , G11C11/4096 , G11C29/02 , G11C29/022 , G11C29/023 , G11C29/028 , G11C29/50008 , G11C29/50012
摘要： A method, system and memory controller that uses adjustable write data delay settings. The memory controller includes control transmit circuitry, data transmit circuitry and timing circuitry. The control circuitry transmits a control signal to multiple memory devices via a shared control signal path. The data transmit circuitry transmits data signals to the memory devices via respective data signal paths. The timing circuitry delays transmission of data signals on each of the data signal paths by a respective time interval that is based, at least in part, on a time required for the control signal to propagate on the control signal path from the memory controller to a respective one of the memory devices.
摘要翻译： 一种使用可调写入数据延迟设置的方法，系统和存储器控制器。 存储器控制器包括控制发射电路，数据发射电路和定时电路。 控制电路通过共享控制信号路径将控制信号发送到多个存储器件。 数据发送电路经由各自的数据信号路径向存储器件发送数据信号。 定时电路延迟每个数据信号路径上的数据信号的传输相应的时间间隔，该时间间隔至少部分地基于控制信号在从存储器控制器到控制信号路径的传播所需的时间 相应的一个存储器件。
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19.发明授权Techniques for increasing bandwidth in port-per-module memory systems having mismatched memory modules 有权增加具有不匹配内存模块的每个模块内存系统带宽的技术公开(公告)号：US07073035B2
公开(公告)日：2006-07-04
申请号：US11100386
申请日：2005-04-07
IPC分类号： G06F12/00
CPC分类号： G06F13/1684 , G11C8/16
摘要： Techniques for increasing bandwidth in port-per-module memory systems having mismatched memory modules are disclosed. In one exemplary embodiment, the techniques are realized through a memory controller for controlling access to a memory module, wherein the memory module has a memory component with a memory core for storing data therein. The memory controller comprises a first set of interface connections for providing access to the memory module, and a second set of interface connections for providing access to the memory module. The memory controller also comprises memory access circuitry for providing memory access signals to the memory module for selecting between a first mode wherein a first portion of the memory core is accessible through the first set of interface connections and a second portion of the memory core is accessible through the second set of interface connections, and a second mode wherein both the first portion and the second portion of the memory core are accessible through the first set of interface connections.
摘要翻译： 公开了用于增加具有不匹配的存储器模块的每模块模块存储器系统中的带宽的技术。 在一个示例性实施例中，通过用于控制对存储器模块的访问的存储器控制器来实现这些技术，其中存储器模块具有存储器组件，存储器组件具有用于在其中存储数据的存储器核心。 存储器控制器包括用于提供对存储器模块的访问的第一组接口连接和用于提供对存储器模块的访问的第二组接口连接。 存储器控制器还包括用于向存储器模块提供存储器访问信号的存储器访问电路，用于在第一模式之间进行选择，其中存储器核心的第一部分可通过第一组接口连接访问，并且存储器核心的第二部分可访问 通过第二组接口连接，以及第二模式，其中存储器核心的第一部分和第二部分都可通过第一组接口连接来访问。
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20.发明授权Techniques for increasing bandwidth in port-per-module memory systems having mismatched memory modules 有权增加具有不匹配内存模块的每个模块内存系统带宽的技术公开(公告)号：US06769050B1
公开(公告)日：2004-07-27
申请号：US09948906
申请日：2001-09-10
IPC分类号： G06F1200
CPC分类号： G06F13/1684 , G11C8/16
摘要： Techniques for increasing bandwidth in port-per-module memory systems having mismatched memory modules are disclosed. In one exemplary embodiment, the techniques are realized through a memory controller for controlling access to a memory module, wherein the memory module has a memory component with a memory core for storing data therein. The memory controller comprises a first set of interface connections for providing access to the memory module, and a second set of interface connections for providing access to the memory module. The memory controller also comprises memory access circuitry for providing memory access signals to the memory module for selecting between a first mode wherein a first portion of the memory core is accessible through the first set of interface connections and a second portion of the memory core is accessible through the second set of interface connections, and a second mode wherein both the first portion and the second portion of the memory core are accessible through the first set of interface connections.
摘要翻译： 公开了用于增加具有不匹配的存储器模块的每模块模块存储器系统中的带宽的技术。 在一个示例性实施例中，通过用于控制对存储器模块的访问的存储器控制器来实现这些技术，其中存储器模块具有存储器组件，存储器组件具有用于在其中存储数据的存储器核心。 存储器控制器包括用于提供对存储器模块的访问的第一组接口连接和用于提供对存储器模块的访问的第二组接口连接。 存储器控制器还包括用于向存储器模块提供存储器访问信号的存储器访问电路，用于在第一模式之间进行选择，其中存储器核心的第一部分可通过第一组接口连接访问，并且存储器核心的第二部分可访问 通过第二组接口连接，以及第二模式，其中存储器核心的第一部分和第二部分都可通过第一组接口连接来访问。
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