Magnetic logic units configured to measure magnetic field direction
    12.
    发明授权
    Magnetic logic units configured to measure magnetic field direction 有权
    配置为测量磁场方向的磁逻辑单元

    公开(公告)号:US09310223B2

    公开(公告)日:2016-04-12

    申请号:US14552338

    申请日:2014-11-24

    Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

    Abstract translation: 一种装置包括电路,被配置为基于输入产生磁场的场线,被配置为确定每个电路的参数的感测模块以及被配置为确定所述装置相对于所述电路的角度定向的磁场方向确定模块 基于参数的外部磁场。 每个电路包括多个磁隧道结。 每个磁性隧道结包括具有存储磁化方向的存储层和具有基于磁场配置的感测磁化方向的感测层。 每个磁性隧道结被构造成使得感应磁化方向和磁性隧道结的电阻基于外部磁场而变化。 该参数根据多个磁隧道结的电阻而变化。 磁场方向确定模块在存储器或处理装置中的至少一个中实现。

    Magnetic Logic Units Configured to Measure Magnetic Field Direction

    公开(公告)号:US20150077096A1

    公开(公告)日:2015-03-19

    申请号:US14552338

    申请日:2014-11-24

    Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

    Analog circuits incorporating magnetic logic units
    15.
    发明授权
    Analog circuits incorporating magnetic logic units 有权
    包含磁逻辑单元的模拟电路

    公开(公告)号:US09503097B2

    公开(公告)日:2016-11-22

    申请号:US14606967

    申请日:2015-01-27

    Abstract: A circuit includes a magnetic logic unit including input terminals, output terminals, a field line, and magnetic tunnel junctions (MTJs). The field line electrically connects a first and a second input terminal, and is configured to generate a magnetic field based on an input to at least one of the first and the second input terminal. The input is based on a first analog input to the circuit. Each MTJ is electrically connected to a first and a second output terminal, and is configured such that an output of at least one of the first and the second output terminal varies in response to a combined resistance of the MTJs. The resistance of the MTJs varies based on the magnetic field. The circuit is configured to mix the first analog input and a second analog input to generate an analog output based on the output of the second output terminal.

    Abstract translation: 电路包括包括输入端子,输出端子,场线和磁隧道结(MTJ)的磁逻辑单元。 场线电连接第一和第二输入端子,并且被配置为基于对第一和第二输入端子中的至少一个的输入产生磁场。 输入基于电路的第一个模拟输入。 每个MTJ电连接到第一和第二输出端,并且被配置为使得第一和第二输出端中的至少一个的输出响应于MTJ的组合电阻而变化。 MTJ的电阻根据磁场而变化。 电路被配置为混合第一模拟输入和第二模拟输入以基于第二输出端的输出产生模拟输出。

    Magnetic logic units configured as analog circuit building blocks
    17.
    发明授权
    Magnetic logic units configured as analog circuit building blocks 有权
    配置为模拟电路构建块的磁逻辑单元

    公开(公告)号:US09350359B2

    公开(公告)日:2016-05-24

    申请号:US14606960

    申请日:2015-01-27

    CPC classification number: H03K19/18 G11C11/1659 G11C11/1673 G11C11/1675

    Abstract: A circuit includes a magnetic logic unit including input terminals, output terminals, a field line, and magnetic tunnel junctions (MTJs). The field line electrically connects a first and a second input terminal, and is configured to generate a magnetic field based on an input to at least one of the first and the second input terminal. The input is based on an analog input to the circuit. Each MTJ is electrically connected to a first output terminal and a second output terminal, and is configured such that an output of at least one of the first and the second output terminal varies in response to a combined resistance of the MTJs. The resistance of each of the MTJs varies based on the magnetic field. The circuit is configured to generate an analog output based on the output of at least one of the first and the second output terminal.

    Abstract translation: 电路包括包括输入端子,输出端子,场线和磁隧道结(MTJ)的磁逻辑单元。 场线电连接第一和第二输入端子,并且被配置为基于对第一和第二输入端子中的至少一个的输入产生磁场。 输入是基于电路的模拟输入。 每个MTJ电连接到第一输出端和第二输出端,并且被配置为使得第一和第二输出端中的至少一个的输出响应于MTJ的组合电阻而变化。 每个MTJ的电阻根据磁场而变化。 电路被配置为基于第一和第二输出端子中的至少一个的输出来产生模拟输出。

    Magnetic Logic Units Configured to Measure Magnetic Field Direction

    公开(公告)号:US20150077097A1

    公开(公告)日:2015-03-19

    申请号:US14552363

    申请日:2014-11-24

    Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

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