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11.发明授权公开(公告)号：US09331268B2
公开(公告)日：2016-05-03
申请号：US14405918
申请日：2013-06-07
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Clarisse Ducruet , Lucien Lombard
CPC classification number: H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02
Abstract: A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.
Abstract translation: 一种热辅助切换MRAM元件，包括具有参考磁化的参考层的磁性隧道结; 具有存储磁化的存储层; 包括在所述存储层和所述参考层之间的隧道势垒层; 以及存储反铁磁层，其将存储层交换耦合，以便在低温阈值下固定存储磁化并将其在高温阈值下释放。 反铁磁层包括：具有第一存储阻挡温度的至少一个第一反铁磁层和具有第二存储阻挡温度的至少一个第二反铁磁层; 其中第一存储阻挡温度低于200℃，第二存储阻挡温度高于250℃。与具有低写入模式工作温度的已知MRAM元件相比，MRAM元件结合了更好的数据保留。
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公开(公告)号：US20150357014A1
公开(公告)日：2015-12-10
申请号：US14762264
申请日：2014-01-16
Applicant: CROCUS TECHNOLOGY SA
Inventor： Ioan Lucian Prejbeanu , Jerome Moritz , Bernard Dieny
CPC classification number: G11C11/161 , G11C11/16 , G11C11/1675 , G11C2211/5615 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.
Abstract translation: MRAM元件具有包括参考层的磁性隧道结，存储层，参考层和存储层之间的隧道势垒层，以及存储反铁磁层。 存储反铁磁层具有交换耦合存储层的存储磁化的第一功能和当通过磁性隧道结中的加热电流时加热磁性隧道结的第二功能。 MRAM元件具有更好的数据保留和低写入温度。
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公开(公告)号：US20130128659A1
公开(公告)日：2013-05-23
申请号：US13683239
申请日：2012-11-21
Applicant: CROCUS TECHNOLOGY SA
Inventor： Ioan Lucian Prejbeanu
IPC: G11C11/16
CPC classification number: G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3263 , H01L43/08 , H01L43/12
Abstract: Magnetic random access memory (MRAM) element suitable for a thermally-assisted write operation and for a self-referenced read operation, comprising a magnetic tunnel junction portion having a first portion and a second portion, each portion comprising a storage layer, a sense layer, and a tunnel barrier layer; the magnetic tunnel junction further comprising an antiferromagnetic layer between the two storage layers and pinning a storage magnetization of each of the storage layers below a critical temperature, and freeing them at and above the critical temperature; such that, during a write operation, a free magnetization of each of the sense layer is magnetically saturable according to a direction of a write magnetic field when applied; and the storage magnetizations are switchable in a direction substantially parallel and corresponding to the direction of the saturated free magnetizations.
Abstract translation: 适用于热辅助写入操作和自参考读取操作的磁性随机存取存储器（MRAM）元件，包括具有第一部分和第二部分的磁性隧道结部分，每个部分包括存储层，感测层 ，以及隧道势垒层; 所述磁隧道结还包括在所述两个存储层之间的反铁磁层，并且将每个所述存储层的存储磁化固定在临界温度以下，并在临界温度以上使其释放; 使得在写入操作期间，每个感测层的自由磁化在施加时根据写入磁场的方向是磁性可饱和的; 并且存储磁化可以在基本平行的方向上切换并且对应于饱和自由磁化的方向。
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公开(公告)号：US09679624B2
公开(公告)日：2017-06-13
申请号：US14647600
申请日：2013-11-19
Applicant: CROCUS Technology SA
Inventor： Lucien Lombard , Ioan Lucian Prejbeanu
CPC classification number: G11C11/161 , G11C11/16 , G11C11/1675 , H01L43/02 , H01L43/08
Abstract: A magnetic random access memory (MRAM) cell including a magnetic tunnel junction containing: a storage layer including at least one storage ferromagnetic layer, each storage ferromagnetic layer having a storage magnetization; an antiferromagnetic storage layer pinning the storage magnetization at a low threshold temperature and freeing them at a high temperature threshold; a reference layer; and a tunnel barrier layer between the reference layer and the storage layer. The magnetic tunnel junction also includes a free ferromagnetic layer having a free magnetization adapted to induce a magnetic stray field magnetically coupling the free ferromagnetic layer with the storage layer; such that the storage magnetization can be switched by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold. The disclosed MRAM cell has low power consumption.
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15.发明授权Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal 有权具有线性磁信号的磁逻辑单元（MLU）单元和放大器公开(公告)号：US09583695B2
公开(公告)日：2017-02-28
申请号：US14431125
申请日：2013-09-12
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
CPC classification number: H01L43/02 , G11C11/16 , G11C11/1675 , H03F15/00 , H03K19/18
Abstract: A magnetic logic unit (MLU) cell includes a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a tunnel barrier layer between the first and second layer. A field line for passing a field current such as to generate an external magnetic field is adapted to switch the first magnetization. The first magnetic layer is arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field. An MLU amplifier includes a plurality of the MLU cells. The MLU amplifier has large gains, extended cut off frequencies and improved linearity.
Abstract translation: 磁逻辑单元（MLU）单元包括第一磁性隧道结和第二磁性隧道结，每个磁性隧道结包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层，和 第一层和第二层。 用于传递场电流（例如产生外部磁场）的场线适于切换第一磁化。 第一磁性层布置成使得磁性隧道结磁化随所产生的外部磁场线性变化。 MLU放大器包括多个MLU单元。 MLU放大器具有很大的增益，延长了截止频率，提高了线性度。
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Patent Agency Ranking
16.发明授权Magnetoresistive element with oxygen getting layer having enhanced exchange bias and thermal stability for spintronic devices 有权具有氧气层的磁阻元件具有增强的自旋电子器件的交换偏压和热稳定性公开(公告)号：US09431601B2
公开(公告)日：2016-08-30
申请号：US14647632
申请日：2013-11-19
Applicant: CROCUS Technology SA
Inventor： Sebastien Bandiera , Ioan Lucian Prejbeanu
CPC classification number: H01L43/08 , G11C11/161 , H01F10/3254 , H01F41/303 , H01L43/02
Abstract: Magnetic element including a first magnetic layer having a first magnetization; a second magnetic layer having a second magnetization; a tunnel barrier layer between the first and the second magnetic layers; and an antiferromagnetic layer exchanged coupling the second magnetic layer such that the second magnetization is pinned below a critical temperature of the antiferromagnetic layer, and can be freely varied when the antiferromagnetic layer is heated above that critical temperature. The magnetic element also includes an oxygen gettering layer between the second magnetic layer and the antiferromagnetic layer, or within the second magnetic layer. The magnetic element has reduced insertion of oxygen atoms in the antiferromagnetic layer and possibly reduced diffusion of manganese in the second magnetic layer resulting in an enhanced exchange bias and/or enhanced resistance to temperature cycles and improved life-time.
Abstract translation: 磁性元件包括具有第一磁化的第一磁性层; 具有第二磁化强度的第二磁性层; 第一和第二磁性层之间的隧道势垒层; 并且反铁磁层交换耦合第二磁性层，使得第二磁化被固定在反铁磁层的临界温度以下，并且当反铁磁层被加热到高于该临界温度时，可以自由地改变。 磁性元件还包括在第二磁性层和反铁磁性层之间或在第二磁性层内的氧吸气层。 磁性元件减少了反铁磁层中的氧原子的插入，并且可能减少了第二磁性层中的锰的扩散，导致增强的交换偏压和/或增强的耐温度循环和改善的寿命。
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17.发明申请公开(公告)号：US20150123224A1
公开(公告)日：2015-05-07
申请号：US14405918
申请日：2013-06-07
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Clarisse Ducruet , Lucien Lombard
CPC classification number: H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02
Abstract: A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.
Abstract translation: 一种热辅助切换MRAM元件，包括具有参考磁化的参考层的磁性隧道结; 具有存储磁化的存储层; 包括在所述存储层和所述参考层之间的隧道势垒层; 以及存储反铁磁层，其将存储层交换耦合，以便在低温阈值下固定存储磁化并将其在高温阈值下释放。 反铁磁层包括：具有第一存储阻挡温度的至少一个第一反铁磁层和具有第二存储阻挡温度的至少一个第二反铁磁层; 其中第一存储阻挡温度低于200℃，第二存储阻挡温度高于250℃。与具有低写入模式工作温度的已知MRAM元件相比，MRAM元件结合了更好的数据保留。
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公开(公告)号：US08797793B2
公开(公告)日：2014-08-05
申请号：US13761292
申请日：2013-02-07
Applicant: Crocus Technology SA
Inventor： Lucien Lombard , Kenneth MacKay , Ioan Lucian Prejbeanu
IPC: G11C11/15
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254
Abstract: The present disclosure concerns a self-referenced MRAM element, comprising a magnetic tunnel junction having a magnetoresistance, comprising: a storage layer having a storage magnetization that is pinned along a first direction when the magnetic tunnel junction is at a low temperature threshold; a sense layer having a sense magnetization; and a tunnel barrier layer included between the storage layer and the sense layer; and an aligning device arranged for providing the sense magnetization with a magnetic anisotropy along a second direction that is substantially perpendicular to the first direction such that the sense magnetization is adjusted about the second direction; the aligning device being further arranged such that, when a first read magnetic field is provided, a resistance variation range of the magnetic tunnel junction is at least about 20% of the magnetoresistance. The self-referenced MRAM cell can be read with an increased reliability and has reducing power consumption.
Abstract translation: 本公开涉及一种自参考MRAM元件，其包括具有磁阻的磁性隧道结，包括：当磁性隧道结处于低温阈值时具有沿着第一方向固定的存储磁化的存储层; 具有感测磁化的感测层; 以及包括在所述存储层和所述感测层之间的隧道势垒层; 以及对准装置，其布置成沿着基本上垂直于第一方向的第二方向提供具有磁各向异性的感测磁化，使得感测磁化围绕第二方向被调节; 对准装置还被布置成使得当提供第一读取磁场时，磁性隧道结的电阻变化范围为磁阻的至少约20％。 可以以增加的可靠性读取自引用的MRAM单元并且具有降低的功耗。
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公开(公告)号：US20130201756A1
公开(公告)日：2013-08-08
申请号：US13761292
申请日：2013-02-07
Applicant: Crocus Technology SA
Inventor： Lucien Lombard , Kenneth MacKay , Ioan Lucian Prejbeanu
IPC: H01L43/02
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254
Abstract: The present disclosure concerns a self-referenced MRAM element, comprising a magnetic tunnel junction having a magnetoresistance, comprising: a storage layer having a storage magnetization that is pinned along a first direction when the magnetic tunnel junction is at a low temperature threshold; a sense layer having a sense magnetization; and a tunnel barrier layer included between the storage layer and the sense layer; and an aligning device arranged for providing the sense magnetization with a magnetic anisotropy along a second direction that is substantially perpendicular to the first direction such that the sense magnetization is adjusted about the second direction; the aligning device being further arranged such that, when a first read magnetic field is provided, a resistance variation range of the magnetic tunnel junction is at least about 20% of the magnetoresistance. The self-referenced MRAM cell can be read with an increased reliability and has reducing power consumption.
Abstract translation: 本公开涉及一种自参考MRAM元件，其包括具有磁阻的磁性隧道结，包括：当磁性隧道结处于低温阈值时具有沿着第一方向固定的存储磁化的存储层; 具有感测磁化的感测层; 以及包括在所述存储层和所述感测层之间的隧道势垒层; 以及对准装置，其布置成沿着基本上垂直于第一方向的第二方向提供具有磁各向异性的感测磁化，使得感测磁化围绕第二方向被调节; 对准装置还被布置成使得当提供第一读取磁场时，磁性隧道结的电阻变化范围为磁阻的至少约20％。 可以以增加的可靠性读取自引用的MRAM单元并且具有降低的功耗。
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20.发明申请公开(公告)号：US20130148419A1
公开(公告)日：2013-06-13
申请号：US13711820
申请日：2012-12-12
Applicant: Crocus Technology SA
Inventor： Ioan Lucian Prejbeanu , Lucien Lombard , Quentin Stainer , Kenneth Mackay
IPC: G11C11/16
CPC classification number: G11C11/161 , G01R33/093 , G01R33/098 , G11C11/15 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01L43/08 , H01L43/10
Abstract: The present disclosure concerns a MRAM element comprising a magnetic tunnel junction comprising: a storage layer, a sense layer, and a tunnel barrier layer included between the storage layer and the sense layer; the storage layer comprising a first magnetic layer having a first storage magnetization; a second magnetic layer having a second storage magnetization; and a non-magnetic coupling layer separating the first and second magnetic layers such that the first storage magnetization is substantially antiparallel to the second storage magnetization; the first and second magnetic layers being arranged such that: at a read temperature the first storage magnetization is substantially equal to the second storage magnetization; and at a write temperature which is higher than the read temperature the second storage magnetization is larger than the first storage magnetization. The disclosed MRAM element generates a low stray field when the magnetic tunnel junction is cooled at a low temperature.
Abstract translation: 本公开涉及一种包括磁性隧道结的MRAM元件，包括：存储层，感测层和包括在存储层和感测层之间的隧道势垒层; 所述存储层包括具有第一存储磁化的第一磁性层; 具有第二存储磁化的第二磁性层; 以及分离所述第一和第二磁性层的非磁性耦合层，使得所述第一存储磁化基本上反平行于所述第二存储磁化; 第一和第二磁性层布置成使得在读取温度下，第一存储磁化基本上等于第二存储磁化; 并且在写入温度高于读取温度时，第二存储磁化强度大于第一存储磁化强度。 当磁性隧道结在低温下被冷却时，所公开的MRAM元件产生低杂散场。
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