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37 条记录 (耗时 0.029 秒)

    Sensor for transcutaneous measurement of vascular access blood flow
    13.
    发明授权
    Sensor for transcutaneous measurement of vascular access blood flow 失效
    用于经皮测量血管通路血流量的传感器

    公开(公告)号：US06804543B2

    公开(公告)日：2004-10-12

    申请号：US10099974

    申请日：2002-03-19

    申请人： David R. Miller ,  David A. Bell ,  Douglas L. Cox ,  Songbiao Zhang

    发明人： David R. Miller ,  David A. Bell ,  Douglas L. Cox ,  Songbiao Zhang

    IPC分类号： A61B500

    CPC分类号： A61B5/14535 ,  A61B5/0261 ,  A61B5/0275 ,  A61B5/14532 ,  A61B5/14552 ,  A61B5/6843 ,  A61M1/3656 ,  A61M1/3663

    摘要： An optical sensor includes a sensing pair of complementary emitter and detector elements for measuring the bulk absorptivity (&agr;) of an area parallel to and including a hemodialysis access site, and a normalizing pair of complementary emitter and detector elements for measuring the absorptivity (&agr;o) of the tissue itself perpendicular to the access site. The pairs of emitter and detector elements define two lines at right angles to each other, and one of the pairs lies to one side of the line defined by the other of the pairs, such that the two pairs of emitter and detector elements form a “T” shape. Indicator dilution techniques are used to measure vascular access flow rates during routine hemodialysis, using the sensor.

    摘要翻译： 光学传感器包括用于测量平行于并包括血液透析进入位置的区域的体积吸收率（α）的互补发射器和检测器元件的感测对，以及用于测量吸收率（αo）的归一化互补发射器和检测器元件对， 的组织本身垂直于进入位置。 发射器和检测器元件对定义了彼此成直角的两条线，并且其中一对位于由另一对对限定的线的一侧，使得两对发射极和检测器元件形成“ T“形。 使用指示剂稀释技术在常规血液透析期间使用传感器来测量血管通路流速。

    Electronic device having a display
    14.
    发明授权
    Electronic device having a display 有权

    公开(公告)号：US06424323B1

    公开(公告)日：2002-07-23

    申请号：US09819285

    申请日：2001-03-28

    申请人： David A. Bell ,  Paul R. Simons ,  Nigel J. Byrnes

    发明人： David A. Bell ,  Paul R. Simons ,  Nigel J. Byrnes

    IPC分类号： G09G500

    摘要： An electronic device, such as a portable telephone or PDA, has a display in the form of a pixel display with an image deflection system overlying the display. The display is controlled to provide at least two independent display images which, when displayed through the image deflection system, are individually visible from different viewing positions relative to the screen. Suitably, the image deflection system comprises a lenticular screen with the lenticles extending horizontally or vertically across the display such that the different views may be seen through tilting of the device.

    Method for forming integrated circuits having buried doped regions
    15.
    发明授权
    Method for forming integrated circuits having buried doped regions 失效
    用于形成具有掩埋掺杂区域的集成电路的方法

    公开(公告)号：US5451530A

    公开(公告)日：1995-09-19

    申请号：US179849

    申请日：1994-01-11

    申请人： David A. Bell ,  Robert H. Havemann

    发明人： David A. Bell ,  Robert H. Havemann

    IPC分类号： H01L21/266 ,  H01L21/74 ,  H01L21/761

    CPC分类号： H01L21/266 ,  H01L21/74

    摘要： A method for fabricating an integrated circuit having a buried doped region is disclosed. A thermal oxide layer is formed over a portion of a p-type substrate at which an n+ buried doped region is not to be formed, masking the implant for the buried doped region. Anneal of the implant is performed in an oxidizing atmosphere, growing further oxide over the surface. The oxide layers are removed, and a p-type blanket implant is performed for isolation purposes and, if desired, to form a p-type buried doped region; the doping concentration of the n+ buried doped region retards diffusion of the boron to the surface thereover. Alternatively, a higher than normal doping level in the substrate can provide sufficient boron for isolation. An epitaxial layer is then grown over the surface, and the n-well is formed by implanting n-type dopant, with the p-well regions masked by a nitride mask; anneal of the n-well is also done in an oxidizing environment, so that consumption of a portion of the n-well by the oxide further planarizes the topography of the device.

    摘要翻译： 公开了一种制造具有掩埋掺杂区域的集成电路的方法。 在不需要形成n +掩埋掺杂区域的p型衬底的一部分上形成热氧化物层，掩蔽埋入掺杂区域的注入。 植入物的退火在氧化气氛中进行，在表面上进一步生长氧化物。 去除氧化物层，并且为了隔离目的进行p型覆盖注入，并且如果需要，进行p型掩埋掺杂区域的形成; n +掩埋掺杂区域的掺杂浓度阻碍硼向其表面的扩散。 或者，衬底中高于正常的掺杂水平可以提供足够的硼用于分离。 然后在表面上生长外延层，并且通过注入n型掺杂剂形成n阱，其中p阱区域被氮化物掩模掩蔽; n阱的退火也在氧化环境中进行，因此通过氧化物消耗n阱的一部分进一步平坦化了器件的形貌。

    SOLAR-AUGMENTED, NOX- AND CO2-RECYCLING, POWER PLANT
    16.
    发明申请
    SOLAR-AUGMENTED, NOX- AND CO2-RECYCLING, POWER PLANT 审中-公开
    太阳能，二氧化碳回收，发电厂

    公开(公告)号：US20100257781A1

    公开(公告)日：2010-10-14

    申请号：US12759207

    申请日：2010-04-13

    申请人： J. Clair Batty ,  Craig E. Cox ,  David A. Bell

    发明人： J. Clair Batty ,  Craig E. Cox ,  David A. Bell

    IPC分类号： A01G1/00 ,  B01D53/14 ,  B01D53/73 ,  A47G5/00

    CPC分类号： B01D53/1456 ,  B01D53/1487 ,  B01D53/77 ,  B01D53/84 ,  B01D2257/302 ,  B01D2257/404 ,  B01D2257/504 ,  B01D2257/708 ,  Y02A50/235 ,  Y02A50/2358 ,  Y02C10/02 ,  Y02P60/24

    摘要： Stack gases of a burner, such as a power plant or other combustion source, may be remediated by a captive algae farm cycling some portion of the stack gases through a scrubber, and ultimately out into a manifold feeding a farm composed of tubes hosting the growth of algae. Liquids from the scrubber, including water capturing volatile organic compounds, solid particulates, nitrogen compounds, sulfur compounds, carbon dioxide, and the like, remediate the water and feed the algae farm. Meanwhile, the vapors and other gases provide an environment rich in water vapor, nitrogen compounds acting as fertilizer, and carbon dioxide to feed the algae to promote increased rates of growth. The algae may be recycled as a fuel itself, or may be harvested for use as a soil amendment to enrich the organic content of soils.

    摘要翻译： 诸如发电厂或其他燃烧源的燃烧器的堆积气体可以通过捕获的藻类养殖场来修复，所述养殖场将堆积气体的一部分通过洗涤器循环，并且最终进入进料由主管生长的管组成的农场 的藻类。 来自洗涤器的液体，包括水捕获挥发性有机化合物，固体颗粒，氮化合物，硫化合物，二氧化碳等，补救水并进食藻类。 同时，蒸汽和其他气体提供了富含水蒸气的环境，作为肥料的氮化合物，以及二氧化碳来供应藻类以促进增长的生长速率。 藻类可以作为燃料本身被回收，或者可以收获用作土壤修饰物以富集土壤的有机物含量。

    Bladder-based cuff for measuring physiological parameters and method of measuring physiological parameter using same
    17.
    发明授权
    Bladder-based cuff for measuring physiological parameters and method of measuring physiological parameter using same 失效
    用于测量生理参数的膀胱袖带和使用其测量生理参数的方法

    公开(公告)号：US07708694B2

    公开(公告)日：2010-05-04

    申请号：US11878342

    申请日：2007-07-24

    申请人： Perry N. Law ,  Douglas L. Cox ,  David R. Miller ,  David A. Bell

    发明人： Perry N. Law ,  Douglas L. Cox ,  David R. Miller ,  David A. Bell

    IPC分类号： A61B5/00

    CPC分类号： A61B5/02233 ,  A61B5/02241 ,  A61B5/02422

    摘要： A cuff for measuring volume and change in volume of a body appendage includes a hollow, rigid tube having an inner surface; and a bladder having an inner surface and an outer surface, the ends of the bladder being sealed to the ends of the tube to create an enclosed internal volume between the inner surface of the bladder and the inner surface of the tube and an external volume defined by the outer surface of the bladder and surrounded by the internal volume, the bladder having a normal, relaxed state, in which the internal volume is filled with a fluid and a retracted state in which the fluid is evacuated from the internal volume. Two stiffener ribs placed on the inner surface of the bladder, parallel to each other and to the lengthwise axis of the tube at diametrically opposite positions. A plurality of emitters and detectors arranged in a linear array are embedded in one of the ribs, so as to emit and detect light through the bladder. A fluid port extending through the tube and communicating with the internal volume, through which the internal volume can be filled with or emptied of the fluid.

    摘要翻译： 用于测量身体附件的体积和体积变化的袖带包括具有内表面的中空刚性管; 以及具有内表面和外表面的囊，所述囊的端部被密封到所述管的端部，以在所述囊的内表面和所述管的内表面之间产生封闭的内部容积，并且限定外部容积 通过膀胱的外表面并被内部体积包围，气囊具有正常的松弛状态，其中内部容积填充有流体和从内部空间排出流体的缩回状态。 两个加强肋布置在囊的内表面上，在直径相对的位置处彼此平行并且与管的纵向轴线平行。 布置成线性阵列的多个发射器和检测器嵌入其中一个肋中，以便通过膀胱发射和检测光。 流体端口延伸穿过管并与内部容积连通，内部容积可以通过该容积填充或排空流体。

    Method of measuring transcutaneous access blood flow
    19.
    发明授权
    Method of measuring transcutaneous access blood flow 有权
    测量经皮血流量的方法

    公开(公告)号：US06746407B2

    公开(公告)日：2004-06-08

    申请号：US09750122

    申请日：2000-12-29

    申请人： Robert R. Steuer ,  David A. Bell ,  David R. Miller

    发明人： Robert R. Steuer ,  David A. Bell ,  David R. Miller

    IPC分类号： A61B500

    CPC分类号： A61B5/0275 ,  A61M1/3609 ,  A61M1/3653 ,  A61M1/3655 ,  A61M1/3656

    摘要： Indicator dilution techniques are used to measure vascular access flow rates during routine hemodialysis. A bolus injection port is used to infuse a specific volume (Vi) of an indicator diluent, such as saline or dye, into the patient cardiovascular circuit by one of the following: 1. Needle injection of a known volume (bolus) of indicator diluent directly into the access site in the presence or absence of the hemodialysis circuit. 2. Infusion of an indicator diluent into the arterial, venous line upstream of the venous needle. 3. Turning the ultrafiltration of the dialysis delivery system from OFF to ON and OFF again over a predetermined time period. 4. In a hemodialysis circuit, turning on the hemodialysis pump and using the priming saline volume as a single saline bolus. A transdermal sensor is used to measure the percent change in a blood parameter. The sensor is positioned directly over the vascular access site a prescribed distance downstream of the injection site and upstream of the access-vein connection. The sensor employs emitter and detector elements at multiple spacings (d1, d2) for the purpose of measuring the bulk absorptivity (&agr;) of the area immediately surrounding and including the access site, and the absorptivity (&agr;o) of the tissue itself.

    摘要翻译： 指标稀释技术用于测量常规血液透析期间的血管通路流速。 推注剂注射口用于通过以下之一将特定体积（Vi）的指示剂稀释液（如盐水或染料）注入患者心血管电路：1。 在血液透析电路存在或不存在的情况下，将已知体积（推注）的指示剂稀释液针注射到进入部位。 将指示剂稀释液注入静脉针上游的静脉血管。 在预定时间内将透析递送系统的超滤从OFF切换到ON和OFF。 在血液透析回路中，打开血液透析泵并使用引发盐水体积作为单次生理盐水。用透皮传感器测量血液参数的变化百分比。 传感器直接位于血管通路的上方，位于注射部位下游和进入静脉连接上游的规定距离处。 传感器采用多个间隔（d1，d2）的发射器和检测器元件，用于测量即将包围进入位置的区域的体积吸收率（α），以及组织本身的吸收率（αo）。

    Method for forming integrated circuits having buried doped regions
    20.
    发明授权
    Method for forming integrated circuits having buried doped regions 失效
    用于形成具有掩埋掺杂区域的集成电路的方法

    公开(公告)号：US5310690A

    公开(公告)日：1994-05-10

    申请号：US880477

    申请日：1992-05-06

    申请人： David A. Bell ,  Robert H. Havemann

    发明人： David A. Bell ,  Robert H. Havemann

    IPC分类号： H01L21/74 ,  H01L21/8249 ,  H01L21/265

    CPC分类号： H01L21/8249 ,  H01L21/74

    摘要： A method for fabricating an integrated circuit having a buried doped region is disclosed. A thermal oxide layer is formed over a portion of a p-type substrate at which an n+ buried doped region is not to be formed, masking the implant for the buried doped region. Anneal of the implant is performed in an oxidizing atmosphere, growing further oxide over the surface. The oxide layers are removed, and a p-type blanket implant is performed for isolation purposes and, if desired, to form a p-type buried doped region; the doping concentration of the n+ buried doped region retards diffusion of the boron to the surface thereover. Alternatively, a higher than normal doping level in the substrate can provide sufficient boron for isolation. An epitaxial layer is then grown over the surface, and the n-well is formed by implanting n-type dopant, with the p-well regions masked by a nitride mask; anneal of the n-well is also done in an oxidizing environment, so that consumption of a portion of the n-well by the oxide further planarizes the topography of the device.

    摘要翻译： 公开了一种制造具有掩埋掺杂区域的集成电路的方法。 在不需要形成n +掩埋掺杂区域的p型衬底的一部分上形成热氧化物层，掩蔽埋入掺杂区域的注入。 植入物的退火在氧化气氛中进行，在表面上进一步生长氧化物。 去除氧化物层，并且为了隔离目的进行p型覆盖注入，并且如果需要，进行p型掩埋掺杂区域的形成; n +掩埋掺杂区域的掺杂浓度阻碍硼向其表面的扩散。 或者，衬底中高于正常的掺杂水平可以提供足够的硼用于分离。 然后在表面上生长外延层，并且通过注入n型掺杂剂形成n阱，其中p阱区域被氮化物掩模掩蔽; n阱的退火也在氧化环境中进行，因此通过氧化物消耗n阱的一部分进一步平坦化了器件的形貌。