公开(公告)号：US08324628B2

公开(公告)日：2012-12-04

申请号：US12073102

申请日：2008-02-29

Applicant: Sun-il Kim ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

Inventor： Sun-il Kim ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

IPC: H01L29/04 ,  H01L21/20

CPC classification number: H01L29/7869

Abstract: Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.

Abstract translation: 提供了一种用于薄膜晶体管的沟道层，薄膜晶体管及其形成方法。 用于薄膜晶体管的沟道层可以包括掺杂有过渡金属的IZO（氧化铟锌）。 薄膜晶体管可以包括栅电极和形成在衬底上的沟道层，形成在栅极和沟道层之间的栅极绝缘层，以及与沟道层的端部接触的源电极和漏电极。

公开(公告)号：US07918989B2

公开(公告)日：2011-04-05

申请号：US11543932

申请日：2006-10-06

Applicant: Dong-hun Kang ,  Wan-jun Park ,  Chan-jin Park

Inventor： Dong-hun Kang ,  Wan-jun Park ,  Chan-jin Park

IPC: G01N27/26

CPC classification number: G01N33/0054 ,  B82Y15/00 ,  G01N33/005 ,  Y02A50/246 ,  Y10S977/92

Abstract: A gas sensor and method thereof are provided. The example gas sensor may include first and second electrodes formed on a substrate, a carbon nanotube connecting the first and second electrodes on the substrate, a light source disposed above the carbon nanotube and an ampere meter measuring current flowing between the first and second electrodes. The example method may be directed to identifying a gas, and may include measuring a first current responsive to a first applied voltage during a first mode of operation, comparing the first measured current with a plurality of first index current values to obtain a first comparison result, each of the plurality of first index current values associated with one of a plurality of gases, measuring a second current responsive to a second applied voltage during a second mode of operation, comparing the second measured current with a plurality of second index current values to obtain a second comparison result, each of the plurality of second index current values associated with one of the plurality of gases and determining gas characteristic information based on the first and second comparison results.

Abstract translation: 提供了一种气体传感器及其方法。 示例性气体传感器可以包括形成在基板上的第一和第二电极，连接基板上的第一和第二电极的碳纳米管，设置在碳纳米管上方的光源和测量在第一和第二电极之间流动的电流的安培计。 示例性方法可以用于识别气体，并且可以包括在第一操作模式期间测量响应于第一施加电压的第一电流，将第一测量电流与多个第一指数电流值进行比较以获得第一比较结果 与多个气体中的一个相关联的多个第一指数电流值中的每一个在第二操作模式期间测量响应于第二施加电压的第二电流，将第二测量电流与多个第二指数电流值进行比较 获得第二比较结果，所述多个第二指数电流值中的每一个与所述多个气体中的一个相关联，并且基于所述第一和第二比较结果确定气体特性信息。

公开(公告)号：US20080237687A1

公开(公告)日：2008-10-02

申请号：US11898037

申请日：2007-09-07

Applicant: Sun-il Kim ,  Young-gu Jin ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

Inventor： Sun-il Kim ,  Young-gu Jin ,  I-hun Song ,  Young-soo Park ,  Dong-hun Kang ,  Chang-jung Kim ,  Jae-chul Park

IPC: H01L29/788

CPC classification number: B82Y10/00 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/7881 ,  H01L29/792

Abstract: Provided is a flash memory device including a gate structure on a substrate. The flash memory device includes a charge supply layer including a ZnO based material formed between a substrate and a gate structure or formed on the gate structure. Accordingly, the flash memory device can be formed to be of a bottom gate type or of a top gate type by including the charge supply layer. Also, the flash memory device may be realized to be any of a charge trap type and a floating gate type.

Abstract translation: 提供了一种在基板上包括栅极结构的闪存器件。 闪存器件包括电荷供应层，其包括形成在衬底和栅极结构之间或形成在栅极结构上的基于ZnO的材料。 因此，闪存器件可以通过包括电荷供给层而形成为底栅型或顶栅型。 此外，闪存器件可以被实现为电荷陷阱型和浮动栅型中的任一种。

公开(公告)号：US20110101343A1

公开(公告)日：2011-05-05

申请号：US12929324

申请日：2011-01-14

Applicant: Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

Inventor： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC: H01L29/12 ,  H01L33/16

CPC classification number: H01L29/7869

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70.Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract translation: 半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z＆nlE;约3.15和约0.55≤n1E; y /z≤n1E;约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US20110101342A1

公开(公告)日：2011-05-05

申请号：US12929323

申请日：2011-01-14

Applicant: Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

Inventor： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC: H01L29/12 ,  H01L21/34 ,  H01L33/16

CPC classification number: H01L29/7869

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

公开(公告)号：US20090068782A1

公开(公告)日：2009-03-12

申请号：US12289192

申请日：2008-10-22

Applicant: Joo-han Chang ,  Dong-hun Kang ,  Young-kwan Cha ,  Wan-jun Park

Inventor： Joo-han Chang ,  Dong-hun Kang ,  Young-kwan Cha ,  Wan-jun Park

IPC: H01L21/00

CPC classification number: H01L27/115 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/842

Abstract: A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.

Abstract translation: 纳米弹性记忆装置及其制造方法。 纳米弹性存储装置可以包括基板，在基板上平行布置的多个下电极，在基板上具有期望或预定厚度的绝缘材料形成的支撑单元，该基板具有露出下电极的空腔， 在空腔中从下电极的表面垂直延伸的弹性体，以及形成在支撑单元上并与纳米弹性体上的下电极垂直交叉的多个上电极。

公开(公告)号：US07453085B2

公开(公告)日：2008-11-18

申请号：US11505970

申请日：2006-08-18

Applicant: Joo-han Chang ,  Dong-hun Kang ,  Young-kwan Cha ,  Wan-jun Park

Inventor： Joo-han Chang ,  Dong-hun Kang ,  Young-kwan Cha ,  Wan-jun Park

IPC: H01L29/06 ,  H01L29/08 ,  H01L31/0352

CPC classification number: H01L27/115 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/842

Abstract: A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.

Abstract translation: 纳米弹性记忆装置及其制造方法。 纳米弹性存储装置可以包括基板，在基板上平行布置的多个下电极，在基板上具有期望或预定厚度的绝缘材料形成的支撑单元，该基板具有露出下电极的空腔， 在空腔中从下电极的表面垂直延伸的弹性体，以及形成在支撑单元上并与纳米弹性体上的下电极垂直交叉的多个上电极。

公开(公告)号：US20080142796A1

公开(公告)日：2008-06-19

申请号：US11980454

申请日：2007-10-31

Applicant: Dong-hun Kang ,  I-hun Song ,  Chang-Jung Kim ,  Young-soo Park

Inventor： Dong-hun Kang ,  I-hun Song ,  Chang-Jung Kim ,  Young-soo Park

IPC: H01L29/10 ,  H01L21/16

CPC classification number: H01L29/22 ,  H01L29/26 ,  H01L29/47 ,  H01L29/872

Abstract: A zinc oxide (ZnO) group and method of forming the same are provided. The ZnO group diode may include a first electrode and a second electrode that are separated from each other, and an active layer formed of MxIn1-xZnO (wherein “M” is a Group III metal) between the first electrode and the second electrode. The first electrode may have a work function lower than the active layer. The second electrode may have a work function higher than the active layer.

Abstract translation: 提供氧化锌（ZnO）基团及其形成方法。 ZnO族二极管可以包括彼此分离的第一电极和第二电极，以及由M 1 x In 1 x x ZnO形成的有源层（其中“ M“是第III族金属）。 第一电极可具有低于有源层的功函数。 第二电极可具有比有源层高的功函数。

公开(公告)号：US20070252147A1

公开(公告)日：2007-11-01

申请号：US11785269

申请日：2007-04-17

Applicant: Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

Inventor： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC: H01L29/04

CPC classification number: H01L29/7869

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3)·y(In2O3)·z(ZnO)  Formula 1wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract translation: 半导体器件可以包括由下面的式1表示的复合物作为有源层。 <？in-line-formula description =“In-line Formulas”end =“lead”？> x（Ga 2 2 O 3 3）y（In < z（ZnO）式1 <？in-line-formula description =“In-line Formulas”end =“tail”？>其中，约0.75 <= x / z <=约3.15，约0.55≤y/z≤约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US08618543B2

公开(公告)日：2013-12-31

申请号：US11978581

申请日：2007-10-30

Applicant: Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

Inventor： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

IPC: H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675

Abstract: Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

Abstract translation: 提供了包括选择性晶化的沟道层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括栅极，沟道层，源极和漏极。 沟道层由氧化物半导体形成，并且与源极和漏极接触的沟道层的至少一部分结晶。 在制造TFT的方法中，沟道层由氧化物半导体形成，并且将金属成分注入到沟道层中，以便使与沟道层和漏极接触的沟道层的至少一部分结晶。 可以通过沉积和热处理金属层或通过离子注入将金属成分注入到沟道层中。