Thin film transistor and method for manufacturing the same
    11.
    发明授权
    Thin film transistor and method for manufacturing the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US09153651B2

    公开(公告)日:2015-10-06

    申请号:US13757699

    申请日:2013-02-01

    Abstract: Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.

    Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管的制造方法包括在基板上形成栅电极,形成与栅电极相邻的有源层,并具有氧化物半导体,在有源层上形成氧供给层,在栅极电极 有源层,形成耦合到有源层的源电极和漏电极,形成覆盖栅电极和栅电介质的平坦化层,形成暴露有源层的孔,并在气氛中对平坦化层进行热处理工艺 的氧气。

    TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    17.
    发明申请
    TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
    转印薄膜晶体管及其制造方法

    公开(公告)号:US20130161704A1

    公开(公告)日:2013-06-27

    申请号:US13775280

    申请日:2013-02-25

    CPC classification number: H01L27/1266 H01L27/1214 H01L27/1218 H01L29/78603

    Abstract: Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

    Abstract translation: 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括:形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽,以在所述沟槽之间限定有源层,所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺,从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

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