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公开(公告)号:US11053440B2
公开(公告)日:2021-07-06
申请号:US16681449
申请日:2019-11-12
Applicant: ENTEGRIS, INC.
Inventor: Steven M. Bilodeau , SeongJin Hong , Hsing-Chen Wu , Min-Chieh Yang , Emanuel I. Cooper
IPC: C09K13/06 , H01L21/311
Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
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公开(公告)号:US10290505B2
公开(公告)日:2019-05-14
申请号:US15752640
申请日:2016-08-12
Applicant: Entegris, Inc.
Inventor: Steven Bilodeau , Emanuel I. Cooper , Hsing-Chen Wu , Min-Chieh Yang
IPC: H01L21/02 , H01L21/28 , H01L21/762
Abstract: Compositions useful for the passivation of germanium-containing materials on a microelectronic device having same thereon.
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公开(公告)号:US09765288B2
公开(公告)日:2017-09-19
申请号:US14648815
申请日:2013-12-04
Applicant: ENTEGRIS, INC. , ATMI TAIWAN CO., LTD
Inventor: Emanuel I. Cooper , Hsing-Chen Wu , Min-Chieh Yang , Sheng-Hung Tu , Li-Min Chen
CPC classification number: C11D7/04 , C11D3/0073 , C11D7/08 , C11D7/26 , C11D7/265 , C11D7/3209 , C11D7/3281 , C11D11/0047
Abstract: Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations.
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