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公开(公告)号：US10825932B2
公开(公告)日：2020-11-03
申请号：US16374095
申请日：2019-04-03
Inventor： Jae-Eun Pi , Seung Youl Kang , Jaehyun Moon , Seongdeok Ahn , Jongchan Lee , Chul Woong Joo , Chi-Sun Hwang
IPC: H01L29/786 , H01L29/66
Abstract: Provided is a thin film transistor including a substrate, a first spacer on the substrate, a second spacer on the first spacer, a light shield layer intervened between the first spacer and the second spacer, a semiconductor layer on the second spacer, and a gate electrode on the semiconductor layer, wherein the light shield layer includes a plurality of inclined surfaces against a top surface of the substrate.
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公开(公告)号：US09733709B2
公开(公告)日：2017-08-15
申请号：US14952914
申请日：2015-11-25
Inventor： Seung Youl Kang , Seungeon Moon , Seongdeok Ahn
IPC: G08B6/00 , G09B21/00 , H04B3/36 , G06F3/01 , H01L41/047 , H01L41/193
CPC classification number: G06F3/016 , G06F3/0488 , G06F2203/04809 , H01L41/047 , H01L41/193
Abstract: A tactile display device comprises a first electrode, a second electrode, supports between a first and a second electrodes, and an electroactive polymer filled between a supports.
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公开(公告)号：US11832486B2
公开(公告)日：2023-11-28
申请号：US17943528
申请日：2022-09-13
Inventor： Jong-Heon Yang , Seung Youl Kang , Yong Hae Kim , Hee-ok Kim , Jeho Na , Jaehyun Moon , Chan Woo Park , Himchan Oh , Seong-Mok Cho , Sung Haeng Cho , Ji Hun Choi , Jae-Eun Pi , Chi-Sun Hwang
IPC: H10K59/131 , G09G3/3225 , G09G3/3266 , H10K59/124
CPC classification number: H10K59/131 , G09G3/3225 , G09G3/3266 , G09G2300/0426 , G09G2300/0814 , G09G2300/0842 , H10K59/124
Abstract: Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.
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公开(公告)号：US11706946B2
公开(公告)日：2023-07-18
申请号：US17191276
申请日：2021-03-03
Inventor： Ji-Young Oh , Himchan Oh , Chul Woong Joo , Seung Youl Kang , Chan Woo Park , Seongdeok Ahn , Jae-Eun Pi , Chi-Sun Hwang
CPC classification number: H10K50/844 , H10K77/111 , H10K85/324 , H10K85/615 , H10K85/654 , H10K85/6565 , H10K85/6572 , H10K50/15 , H10K50/16
Abstract: Provided is a stretchable display device. The stretchable display device includes a substrate and a base pattern on the substrate, wherein the base pattern comprises a first portion, a second portion, and a connection portion configured to connect the first portion to the second portion. The stretchable display device includes a lower electrode on the first portion of the base pattern; an upper electrode on the lower electrode, a light emitting structure between the lower electrode and the upper electrode, and a protective layer configured to cover top and side surfaces of the upper electrode, side surfaces of the light emitting structure, a side surface of the lower electrode, and a portion of a side surface of the base pattern. The upper electrode extends to a top surface of the connection portion and a top surface of the second portion of the base pattern, and the first portion and the second portion of the base pattern extend in a first direction parallel to a top surface of the substrate. The first portion and the second portion are parallel to the top surface of the substrate and are spaced apart from each other in a second direction crossing the first direction. The connection portion extends in the second direction. A level of the lowermost surface of the protective layer is disposed between a bottom surface of the lower electrode and a bottom surface of the base pattern.
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公开(公告)号：US11514724B2
公开(公告)日：2022-11-29
申请号：US17331300
申请日：2021-05-26
Inventor： Young Sam Park , Seung Youl Kang , Chul Woong Joo , Jae-Eun Pi
IPC: G06K9/00 , G06V40/60 , G02F1/1339 , G02B27/10 , G02F1/1343 , G06V40/13
Abstract: Disclosed are a biometric device and a biometric system including the same. The device includes a biogenic-synthesized film, a reflective layer disposed on one side of the biogenic-synthesized film, a light source disposed on the reflective layer to generate light, a beam splitter disposed between the light source and the reflective layer to provide the light to the reflective layer and another side of the biogenic-synthesized film, and a light switching layer disposed between the beam splitter and the reflective layer to switch the light provided to the reflective layer.
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Patent Agency Ranking
公开(公告)号：US11342344B2
公开(公告)日：2022-05-24
申请号：US17089286
申请日：2020-11-04
Applicant: Electronics and Telecommunications Research Institute , University-Industry Cooperation Group of Kyung Hee University
Inventor： Seungeon Moon , Bae Ho Park , Sung-Min Yoon , Seung Youl Kang , Jeong Hun Kim , Jiyong Woo , Jong Pil Im , Chansoo Yoon , Ji Hoon Jeon
IPC: H01L21/00 , H01L27/11507 , H01L27/11504 , H01L49/02
Abstract: The present disclosure relates to a memory device, and more particularly, to a memory device including a substrate, a plurality of vertical structures disposed on the substrate and including insulation layers and lower electrodes, which are alternately laminated with each other, wherein the vertical structures are aligned in a first direction parallel to a top surface of the substrate and a second direction crossing the first direction, an upper electrode disposed on a top surface and side surfaces of each of the vertical structures, and a first dielectric layer disposed between the upper electrode and the vertical structures to cover the top surface and the side surfaces of each of the vertical structures. Here, the first dielectric layer includes a ferroelectric material.
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公开(公告)号：US10741777B2
公开(公告)日：2020-08-11
申请号：US16204869
申请日：2018-11-29
Inventor： Chi-Sun Hwang , Seung Youl Kang , Byoung-Hwa Kwon , Gi Heon Kim , Seong Hyun Kim , Jaehyun Moon , Young Sam Park , Seongdeok Ahn , Jeong Ik Lee , Sung Haeng Cho
Abstract: Provided is a stretchable display including an elastic body, a light emitting unit on the elastic body, and a wiring unit on the elastic body, wherein the light emitting unit includes a first substrate unit on the elastic body, a buffer layer on the first substrate unit, and a light emitting element on the buffer layer, the wiring unit includes a second substrate unit on the elastic body, a driving element configured to control the light emitting element, a wiring configured to electrically connect the driving element and the light emitting element, and an insulation layer configured to cover the driving element and the wiring, the light emitting unit and the wiring unit have respective corrugation structures, a thickness of the light emitting unit is larger than that of the wiring unit, a modulus of elasticity of the buffer layer is larger than that of the insulation layer, and a modulus of elasticity of the elastic body is smaller than that of the insulation layer.
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公开(公告)号：US08653631B2
公开(公告)日：2014-02-18
申请号：US13775280
申请日：2013-02-25
Inventor： Jae Bon Koo , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
IPC: H01L29/06
CPC classification number: H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603
Abstract: Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
Abstract translation: 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。
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公开(公告)号：US08581235B2
公开(公告)日：2013-11-12
申请号：US13915851
申请日：2013-06-12
Inventor： Jonghyurk Park , Seung Youl Kang
IPC: H01L29/06
CPC classification number: H01L29/7606 , B82Y10/00 , B82Y30/00 , H01L21/02601 , H01L21/02628 , H01L21/26513 , H01L29/0665 , H01L29/127 , H01L29/413 , H01L29/66439 , H01L29/66977 , H01L29/78696
Abstract: Provided are a resonance tunneling device and a method of manufacturing the resonance tunneling device. The resonance tunneling device includes a substrate, a plurality of electrodes disposed on the substrate, and a nanoparticle layer disposed between the electrodes, and doped with an impurity. The nanoparticle layer uses the impurity to exhibit resonance tunneling where a current peak occurs at a target bias voltage applied between the electrodes.
Abstract translation: 提供一种谐振隧穿装置及其制造方法。 谐振隧穿装置包括衬底，设置在衬底上的多个电极和设置在电极之间并掺杂杂质的纳米颗粒层。 纳米颗粒层使用杂质表现出谐振隧穿，其中在施加在电极之间的目标偏置电压发生电流峰值。
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公开(公告)号：US20130270522A1
公开(公告)日：2013-10-17
申请号：US13915851
申请日：2013-06-12
Inventor： Jonghyurk PARK , Seung Youl Kang
IPC: H01L29/76
CPC classification number: H01L29/7606 , B82Y10/00 , B82Y30/00 , H01L21/02601 , H01L21/02628 , H01L21/26513 , H01L29/0665 , H01L29/127 , H01L29/413 , H01L29/66439 , H01L29/66977 , H01L29/78696
Abstract: Provided are a resonance tunneling device and a method of manufacturing the resonance tunneling device. The resonance tunneling device includes a substrate, a plurality of electrodes disposed on the substrate, and a nanoparticle layer disposed between the electrodes, and doped with an impurity. The nanoparticle layer uses the impurity to exhibit resonance tunneling where a current peak occurs at a target bias voltage applied between the electrodes.
Abstract translation: 提供一种谐振隧穿装置及其制造方法。 谐振隧穿装置包括衬底，设置在衬底上的多个电极和设置在电极之间并掺杂杂质的纳米颗粒层。 纳米颗粒层使用杂质表现出谐振隧穿，其中在施加在电极之间的目标偏置电压发生电流峰值。
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