公开(公告)号：US08686806B2

公开(公告)日：2014-04-01

申请号：US13068117

申请日：2011-05-03

申请人： Emmanuel P. Quevy ,  Manu Seth

发明人： Emmanuel P. Quevy ,  Manu Seth

IPC分类号： H03B5/32

CPC分类号： H03L1/022 ,  H03L7/085 ,  H03L7/16

摘要： An apparatus and a method for compensating for a mismatch in temperature coefficients of two oscillator frequencies to match a desired frequency ratio between the two oscillator frequencies over a temperature range. In one embodiment of a temperature sensor, first and second oscillators of different temperature characteristics are coupled to a differential frequency discriminator (DFD) circuit. The DFD circuit compensates for the different characteristics in order to match a frequency difference between the first and second frequencies over a temperature range.

摘要翻译： 一种用于补偿两个振荡器频率的温度系数不匹配以匹配温度范围内两个振荡器频率之间的期望频率比的装置和方法。 在温度传感器的一个实施例中，具有不同温度特性的第一和第二振荡器耦合到差分鉴频器（DFD）电路。 DFD电路补偿不同的特性，以便在温度范围内匹配第一和第二频率之间的频率差。

公开(公告)号：US08461935B2

公开(公告)日：2013-06-11

申请号：US12927960

申请日：2010-11-30

申请人： Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

发明人： Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

IPC分类号： H03B5/30

CPC分类号： H03H9/1057 ,  H03H9/2426

摘要： A hybrid system having a non-MEMS device and a MEMS device is described. The apparatus includes a non-MEMS device and an integrated circuit including a MEMS device, the integrated circuit formed on a substrate. The integrated circuit includes a control circuit for the non-MEMS device and a MEMS control circuit for the MEMS device.

公开(公告)号：US08329559B2

公开(公告)日：2012-12-11

申请号：US11737545

申请日：2007-04-19

申请人： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

发明人： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC分类号： B81C1/00142 ,  B81B2201/0271 ,  B81C2201/0109 ,  Y10S438/933

摘要： In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

摘要翻译： 在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成 至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙 。

公开(公告)号：US07816166B1

公开(公告)日：2010-10-19

申请号：US11716082

申请日：2007-03-09

申请人： Emmanuel P. Quevy

发明人： Emmanuel P. Quevy

IPC分类号： H01L21/00

CPC分类号： B81C1/0015 ,  B81B2201/0271 ,  B81C1/00595 ,  B81C2201/0136 ,  B81C2201/014

摘要： A method to form a MEMS structure is described. In an embodiment, a structure having a first release layer between a substrate and a member is provided. A second release layer is adjacent to a sidewall of the member. At least a portion of each of the first and the second release layers is then removed. In one embodiment, the member is formed by a damascene process. In another embodiment, the member is formed by a subtractive process. In a specific embodiment, the second release layer formed adjacent to a sidewall of the member has sub-lithographic dimensions.

摘要翻译： 描述了形成MEMS结构的方法。 在一个实施例中，提供了在基板和构件之间具有第一释放层的结构。 第二释放层与构件的侧壁相邻。 然后去除第一和第二释放层中的每一个的至少一部分。 在一个实施例中，构件通过镶嵌工艺形成。 在另一个实施例中，构件通过减法处理形成。 在具体实施例中，与构件的侧壁相邻形成的第二释放层具有亚光刻尺寸。

公开(公告)号：US07514760B1

公开(公告)日：2009-04-07

申请号：US11716284

申请日：2007-03-09

申请人： Emmanuel P. Quevy

发明人： Emmanuel P. Quevy

IPC分类号： H01L29/78 ,  H01L21/00

CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  B81C2203/0735 ,  H03H3/0072 ,  H03H9/2426 ,  H03H9/2457 ,  H03H2009/02496

摘要： An IC-compatible MEMS structure and a method to form such a structure are described. In an embodiment, an integrated circuit having a MEMS device is formed. The structure comprises a plurality of semiconductor devices formed on a substrate. A plurality of interconnects is above and coupled with the plurality of semiconductor devices, incorporating the plurality of semiconductor devices into the integrated circuit. A MEMS resonator is formed above, and coupled with, the plurality of interconnects. In one embodiment, the MEMS resonator is comprised of a member and a pair of electrodes. The pair of electrodes is electrically coupled with the plurality of interconnects.

摘要翻译： 描述了IC兼容的MEMS结构和形成这种结构的方法。 在一个实施例中，形成具有MEMS器件的集成电路。 该结构包括形成在基板上的多个半导体器件。 多个互连在多个半导体器件的上方并耦合，将多个半导体器件并入集成电路中。 MEMS谐振器形成在多个互连件的上方并与之耦合。 在一个实施例中，MEMS谐振器由构件和一对电极构成。 该对电极与多个互连件电耦合。

公开(公告)号：US08716815B2

公开(公告)日：2014-05-06

申请号：US12927312

申请日：2010-11-10

申请人： Emmanuel P. Quevy ,  Roger T. Howe

发明人： Emmanuel P. Quevy ,  Roger T. Howe

IPC分类号： H01L27/14

CPC分类号： B81C1/00039 ,  B81B2201/0271

摘要： A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.

摘要翻译： 描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。 在一个实施例中，MEMS结构包括构件和衬底。 耦合器延伸穿过构件的一部分并将构件与衬底连接。 该构件由第一材料构成，并且该耦合器由第二材料构成。 在一个实施例中，第一和第二材料基本相同。 在一个实施例中，第二材料是导电的并且不同于第一材料。 在另一个实施例中，一种用于制造MEMS结构的方法包括首先在衬底上形成构件。 然后形成由导电材料构成的耦合器，以将该构件与衬底连接。

公开(公告)号：US08669831B2

公开(公告)日：2014-03-11

申请号：US12950519

申请日：2010-11-19

申请人： Emmanuel P. Quevy ,  David H. Bernstein

发明人： Emmanuel P. Quevy ,  David H. Bernstein

IPC分类号： H03H9/00 ,  H03H9/24 ,  H03H9/21 ,  H03H3/013

CPC分类号： B81C1/0069 ,  B81C1/00349 ,  B81C1/00523 ,  G02B6/358 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/2457 ,  H03H2009/02496 ,  H03H2009/2442 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49165

摘要： MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.

摘要翻译： 包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。 第一种材料具有与第二种材料不同的杨氏模量温度系数。 在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。 在一个这样的实施例中，第一材料是半导体，第二材料是电介质。 在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。 在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。 在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。

公开(公告)号：US08436690B2

公开(公告)日：2013-05-07

申请号：US12927949

申请日：2010-11-30

申请人： Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

发明人： Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

IPC分类号： H03B5/30

CPC分类号： H03H9/1057 ,  H03H9/2426

摘要： A hybrid system having a non-MEMS device and a MEMS device is described. The apparatus includes a non-MEMS device and an integrated circuit including a MEMS device, the integrated circuit formed on a substrate. The integrated circuit includes a control circuit for the non-MEMS device and a MEMS control circuit for the MEMS device.

摘要翻译： 描述了具有非MEMS器件和MEMS器件的混合系统。 该装置包括非MEMS器件和包括MEMS器件的集成电路，该集成电路形成在衬底上。 集成电路包括用于非MEMS器件的控制电路和用于MEMS器件的MEMS控制电路。

公开(公告)号：US08288835B2

公开(公告)日：2012-10-16

申请号：US13017844

申请日：2011-01-31

申请人： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

发明人： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

IPC分类号： H01L29/84

CPC分类号： B81C1/00293 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0721 ,  B81C2203/0735 ,  B81C2203/0771

摘要： Microshells including a perforated pre-sealing layer and an integrated getter layer are provided. The integrated getter layer may be disposed between other layers of a perforated pre-sealing layer. The perforated pre-sealing layer may include at least one perforation, and a sealing layer may be provided on the pre-sealing layer to close the perforation.

摘要翻译： 提供了包括穿孔预密封层和集成吸气剂层的微壳。 集成的吸气剂层可以设置在穿孔预密封层的其它层之间。 穿孔预密封层可以包括至少一个穿孔，并且可以在预密封层上设置密封层以封闭穿孔。

公开(公告)号：US07982550B1

公开(公告)日：2011-07-19

申请号：US12217190

申请日：2008-07-01

申请人： Emmanuel P. Quevy ,  Manu Seth

发明人： Emmanuel P. Quevy ,  Manu Seth

IPC分类号： H03B5/32

CPC分类号： H03L1/022 ,  H03L7/085 ,  H03L7/16

摘要： An apparatus and a method for compensating for a mismatch in temperature coefficients of two oscillator frequencies to match a desired frequency ratio between the two oscillator frequencies over a temperature range. In one embodiment of a temperature sensor, first and second oscillators of different temperature characteristics are coupled to a differential frequency discriminator (DFD) circuit. The DFD circuit compensates for the different characteristics in order to match a frequency difference between the first and second frequencies over a temperature range.

摘要翻译： 一种用于补偿两个振荡器频率的温度系数不匹配以匹配温度范围内两个振荡器频率之间的期望频率比的装置和方法。 在温度传感器的一个实施例中，具有不同温度特性的第一和第二振荡器耦合到差分鉴频器（DFD）电路。 DFD电路补偿不同的特性，以便在温度范围内匹配第一和第二频率之间的频率差。