公开(公告)号：US08686806B2

公开(公告)日：2014-04-01

申请号：US13068117

申请日：2011-05-03

Applicant: Emmanuel P. Quevy ,  Manu Seth

Inventor： Emmanuel P. Quevy ,  Manu Seth

IPC: H03B5/32

CPC classification number: H03L1/022 ,  H03L7/085 ,  H03L7/16

Abstract: An apparatus and a method for compensating for a mismatch in temperature coefficients of two oscillator frequencies to match a desired frequency ratio between the two oscillator frequencies over a temperature range. In one embodiment of a temperature sensor, first and second oscillators of different temperature characteristics are coupled to a differential frequency discriminator (DFD) circuit. The DFD circuit compensates for the different characteristics in order to match a frequency difference between the first and second frequencies over a temperature range.

Abstract translation: 一种用于补偿两个振荡器频率的温度系数不匹配以匹配温度范围内两个振荡器频率之间的期望频率比的装置和方法。 在温度传感器的一个实施例中，具有不同温度特性的第一和第二振荡器耦合到差分鉴频器（DFD）电路。 DFD电路补偿不同的特性，以便在温度范围内匹配第一和第二频率之间的频率差。

公开(公告)号：US08461935B2

公开(公告)日：2013-06-11

申请号：US12927960

申请日：2010-11-30

Applicant: Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

Inventor： Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

IPC: H03B5/30

CPC classification number: H03H9/1057 ,  H03H9/2426

Abstract: A hybrid system having a non-MEMS device and a MEMS device is described. The apparatus includes a non-MEMS device and an integrated circuit including a MEMS device, the integrated circuit formed on a substrate. The integrated circuit includes a control circuit for the non-MEMS device and a MEMS control circuit for the MEMS device.

公开(公告)号：US20130002363A1

公开(公告)日：2013-01-03

申请号：US13173449

申请日：2011-06-30

Applicant: Mehrnaz Motiee ,  Emmanuel P. Quevy ,  David H. Bernstein

Inventor： Mehrnaz Motiee ,  Emmanuel P. Quevy ,  David H. Bernstein

IPC: H03B5/30

CPC classification number: H03H9/2457 ,  H03H9/2452 ,  H03H2009/02299 ,  H03H2009/02511

Abstract: A microelectromechanical system (MEMS) device includes a resonator anchored to a substrate. The resonator includes a first strain gradient statically deflecting a released portion of the resonator in an out-of-plane direction with respect to the substrate. The resonator includes a first electrode anchored to the substrate. The first electrode includes a second strain gradient of a released portion of the first electrode. The first electrode is configured to electrostatically drive the resonator in a first mode that varies a relative amount of displacement between the resonator and the first electrode. The resonator may include a resonator anchor anchored to the substrate. The first electrode may include an electrode anchor anchored to the substrate in close proximity to the resonator anchor. The electrode anchor may be positioned relative to the resonator anchor to substantially decouple dynamic displacements of the resonator relative to the electrode from changes to the substrate.

Abstract translation: 微机电系统（MEMS）装置包括锚定到基板的谐振器。 谐振器包括使第一应变梯度在相对于衬底的平面外方向上静态偏转谐振器的释放部分。 谐振器包括锚定到基板的第一电极。 第一电极包括第一电极的释放部分的第二应变梯度。 第一电极被配置为以改变谐振器和第一电极之间的相对的位移量的第一模式静电驱动谐振器。 谐振器可以包括锚定到衬底的谐振器锚。 第一电极可以包括锚固到靠近谐振器锚的衬底的电极锚。 电极锚定件可以相对于谐振器锚固件定位，以基本上使谐振器相对于电极的动态位移与基板的变化相分离。

公开(公告)号：US20120329255A1

公开(公告)日：2012-12-27

申请号：US13599240

申请日：2012-08-30

Applicant: Emmanuel P. Quevy ,  David H. Bernstein ,  Mehrnaz Motiee

Inventor： Emmanuel P. Quevy ,  David H. Bernstein ,  Mehrnaz Motiee

IPC: H01L21/20

CPC classification number: H03H9/2457 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/02409 ,  H03H9/2463 ,  H03H2009/02299 ,  H03H2009/02307 ,  H03H2009/0233 ,  H03H2009/02472 ,  H03H2009/02511 ,  H03H2009/02519

Abstract: A method of forming a microelectromechanical systems (MEMS) device includes forming an electrode on a substrate. The method includes forming a structural layer on the substrate. The structural layer is disposed about a perimeter of the electrode and has a residual film stress gradient. The method includes releasing the structural layer to form a resonator coupled to the substrate. The residual film stress gradient deflects a first portion of the resonator out of a plane defined by a surface of the electrode.

Abstract translation: 形成微机电系统（MEMS）器件的方法包括在衬底上形成电极。 该方法包括在衬底上形成结构层。 结构层围绕电极的周边设置并具有残余膜应力梯度。 该方法包括释放结构层以形成耦合到衬底的谐振器。 残余膜应力梯度将谐振器的第一部分偏离由电极表面限定的平面。

公开(公告)号：US08329559B2

公开(公告)日：2012-12-11

申请号：US11737545

申请日：2007-04-19

Applicant: Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

Inventor： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

IPC: H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/0109 ,  Y10S438/933

Abstract: In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

Abstract translation: 在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成 至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙 。

公开(公告)号：US07816166B1

公开(公告)日：2010-10-19

申请号：US11716082

申请日：2007-03-09

Applicant: Emmanuel P. Quevy

Inventor： Emmanuel P. Quevy

IPC: H01L21/00

CPC classification number: B81C1/0015 ,  B81B2201/0271 ,  B81C1/00595 ,  B81C2201/0136 ,  B81C2201/014

Abstract: A method to form a MEMS structure is described. In an embodiment, a structure having a first release layer between a substrate and a member is provided. A second release layer is adjacent to a sidewall of the member. At least a portion of each of the first and the second release layers is then removed. In one embodiment, the member is formed by a damascene process. In another embodiment, the member is formed by a subtractive process. In a specific embodiment, the second release layer formed adjacent to a sidewall of the member has sub-lithographic dimensions.

Abstract translation: 描述了形成MEMS结构的方法。 在一个实施例中，提供了在基板和构件之间具有第一释放层的结构。 第二释放层与构件的侧壁相邻。 然后去除第一和第二释放层中的每一个的至少一部分。 在一个实施例中，构件通过镶嵌工艺形成。 在另一个实施例中，构件通过减法处理形成。 在具体实施例中，与构件的侧壁相邻形成的第二释放层具有亚光刻尺寸。

公开(公告)号：US07514760B1

公开(公告)日：2009-04-07

申请号：US11716284

申请日：2007-03-09

Applicant: Emmanuel P. Quevy

Inventor： Emmanuel P. Quevy

IPC: H01L29/78 ,  H01L21/00

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  B81C2203/0735 ,  H03H3/0072 ,  H03H9/2426 ,  H03H9/2457 ,  H03H2009/02496

Abstract: An IC-compatible MEMS structure and a method to form such a structure are described. In an embodiment, an integrated circuit having a MEMS device is formed. The structure comprises a plurality of semiconductor devices formed on a substrate. A plurality of interconnects is above and coupled with the plurality of semiconductor devices, incorporating the plurality of semiconductor devices into the integrated circuit. A MEMS resonator is formed above, and coupled with, the plurality of interconnects. In one embodiment, the MEMS resonator is comprised of a member and a pair of electrodes. The pair of electrodes is electrically coupled with the plurality of interconnects.

Abstract translation: 描述了IC兼容的MEMS结构和形成这种结构的方法。 在一个实施例中，形成具有MEMS器件的集成电路。 该结构包括形成在基板上的多个半导体器件。 多个互连在多个半导体器件的上方并耦合，将多个半导体器件并入集成电路中。 MEMS谐振器形成在多个互连件的上方并与之耦合。 在一个实施例中，MEMS谐振器由构件和一对电极构成。 该对电极与多个互连件电耦合。

公开(公告)号：US08716815B2

公开(公告)日：2014-05-06

申请号：US12927312

申请日：2010-11-10

Applicant: Emmanuel P. Quevy ,  Roger T. Howe

Inventor： Emmanuel P. Quevy ,  Roger T. Howe

IPC: H01L27/14

CPC classification number: B81C1/00039 ,  B81B2201/0271

Abstract: A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.

Abstract translation: 描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。 在一个实施例中，MEMS结构包括构件和衬底。 耦合器延伸穿过构件的一部分并将构件与衬底连接。 该构件由第一材料构成，并且该耦合器由第二材料构成。 在一个实施例中，第一和第二材料基本相同。 在一个实施例中，第二材料是导电的并且不同于第一材料。 在另一个实施例中，一种用于制造MEMS结构的方法包括首先在衬底上形成构件。 然后形成由导电材料构成的耦合器，以将该构件与衬底连接。

公开(公告)号：US08669831B2

公开(公告)日：2014-03-11

申请号：US12950519

申请日：2010-11-19

Applicant: Emmanuel P. Quevy ,  David H. Bernstein

Inventor： Emmanuel P. Quevy ,  David H. Bernstein

IPC: H03H9/00 ,  H03H9/24 ,  H03H9/21 ,  H03H3/013

CPC classification number: B81C1/0069 ,  B81C1/00349 ,  B81C1/00523 ,  G02B6/358 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/2457 ,  H03H2009/02496 ,  H03H2009/2442 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49165

Abstract: MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.

Abstract translation: 包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。 第一种材料具有与第二种材料不同的杨氏模量温度系数。 在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。 在一个这样的实施例中，第一材料是半导体，第二材料是电介质。 在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。 在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。 在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。

公开(公告)号：US08436690B2

公开(公告)日：2013-05-07

申请号：US12927949

申请日：2010-11-30

Applicant: Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

Inventor： Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

IPC: H03B5/30

CPC classification number: H03H9/1057 ,  H03H9/2426

Abstract: A hybrid system having a non-MEMS device and a MEMS device is described. The apparatus includes a non-MEMS device and an integrated circuit including a MEMS device, the integrated circuit formed on a substrate. The integrated circuit includes a control circuit for the non-MEMS device and a MEMS control circuit for the MEMS device.

Abstract translation: 描述了具有非MEMS器件和MEMS器件的混合系统。 该装置包括非MEMS器件和包括MEMS器件的集成电路，该集成电路形成在衬底上。 集成电路包括用于非MEMS器件的控制电路和用于MEMS器件的MEMS控制电路。