Electrochemical/electrocon trollable device electrode
    15.
    发明授权
    Electrochemical/electrocon trollable device electrode 有权
    电化学/电可控器件电极

    公开(公告)号:US07193763B2

    公开(公告)日:2007-03-20

    申请号:US10495758

    申请日:2002-12-04

    IPC分类号: G02F1/15

    CPC分类号: G02F1/155 G02F1/13439

    摘要: An electrochemical/electrically controllable device including at least one carrier substrate provided with an electroactive layer or a stack of electroactive layers placed between a lower electrode and an upper electrode. The upper electrode includes at least one electronically conductive layer, especially a transparent one, based on doped indium oxide or on doped tin oxide or on doped zinc oxide, which is at least partially crystallized in the form of crystallites having a mean size of between 5 and 100 nm, especially between 10 and 50 nm.

    摘要翻译: 一种电化学/电可控制的装置,其包括至少一个载体基底,该载体基底设置有置于下电极和上电极之间的电活性层或电活性层的叠层。 上电极包括至少一个电子导电层,特别是基于掺杂氧化铟或掺杂氧化锡或掺杂氧化锌的电子导电层,其至少部分地以平均尺寸为5微米的微晶形式结晶 和100nm,特别是在10和50nm之间。

    Electrochemical/electrocon trollable device electrode
    16.
    发明申请
    Electrochemical/electrocon trollable device electrode 有权
    电化学/电可控器件电极

    公开(公告)号:US20050041276A1

    公开(公告)日:2005-02-24

    申请号:US10495758

    申请日:2002-12-04

    CPC分类号: G02F1/155 G02F1/13439

    摘要: An electrochemical/electrically controllable device including at least one carrier substrate provided with an electroactive layer or a stack of electroactive layers placed between a lower electrode and an upper electrode. The upper electrode includes at least one electronically conductive layer, especially a transparent one, based on doped indium oxide or on doped tin oxide or on doped zinc oxide, which is at least partially crystallized in the form of crystallites having a mean size of between 5 and 100 nm, especially between 10 and 50 nm.

    摘要翻译: 一种电化学/电可控制的装置,其包括至少一个载体基底,该载体基底设置有置于下电极和上电极之间的电活性层或电活性层的叠层。 上电极包括至少一个电子导电层,特别是基于掺杂氧化铟或掺杂氧化锡或掺杂氧化锌的电子导电层,其至少部分地以平均尺寸为5微米的微晶形式结晶 和100nm,特别是在10和50nm之间。

    Method for producing a hydrophobic coating, device for implementing said method and support provided with a hydrophobic coating
    20.
    发明授权
    Method for producing a hydrophobic coating, device for implementing said method and support provided with a hydrophobic coating 有权
    用于制备疏水涂层的方法,用于实施所述方法的装置和具有疏水涂层的支撑体

    公开(公告)号:US08282997B2

    公开(公告)日:2012-10-09

    申请号:US11597658

    申请日:2005-05-26

    IPC分类号: C23C14/02 H05H1/00 C04B41/00

    摘要: The invention concerns a method for producing a coating on a support, in particular a glass support, wherein a thin-film metal oxide is deposited on the support, said thin film being subjected to an etching process to roughen its surface, a second coating capable of adhering to the first metal oxide film is then applied on the roughened surface. The invention is characterized in that it consists in depositing a first doped metal oxide or metal oxynitride doped with at least a second metal oxide or metal oxynitride, the second metal oxide or metal oxynitride being distributed in the deposited film. During the etching process, a plasma-activated gas is used which removes at least a second metal oxide or metal oxynitride less than the first metal oxide or metal oxynitride so as to form, after the etching process, on the surface raised irregularities consisting of at least a second metal oxide or metal oxynitride.

    摘要翻译: 本发明涉及一种用于在载体上制备涂层的方法,特别是一种玻璃载体,其中在载体上沉积薄膜金属氧化物,所述薄膜经受蚀刻处理使其表面变粗糙,第二涂层能够 然后将第一金属氧化物膜附着在粗糙表面上。 本发明的特征在于其中沉积掺杂有至少第二金属氧化物或金属氮氧化物的第一掺杂金属氧化物或金属氮氧化物,第二金属氧化物或金属氮氧化物分布在沉积膜中。 在蚀刻过程中,使用等离子体活化气体,其除去比第一金属氧化物或金属氧氮化物少的至少第二金属氧化物或金属氮氧化物,以在蚀刻工艺之后形成由在 至少第二金属氧化物或金属氮氧化物。