公开(公告)号：US20140329357A1

公开(公告)日：2014-11-06

申请号：US14332924

申请日：2014-07-16

Applicant: Entegris, Inc.

Inventor： Matthias Stender ,  Chongying Xu ,  Tianniu Chen ,  William Hunks ,  Philip S.H. Chen ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  C07C333/16 ,  C07C395/00 ,  C07F7/10 ,  C23C16/305

Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract translation: 用于在诸如晶片或其他微电子器件基底的基底上沉积含碲膜的前体，以及制备和使用这些前体的相关工艺以及这些前体的源封装。 前体可用于通过诸如化学气相沉积（CVD）和原子层沉积（ALD）的沉积技术在制造非易失性相变存储器（PCM）中沉积Ge2Sb2Te5硫族化物薄膜。

公开(公告)号：US09637395B2

公开(公告)日：2017-05-02

申请号：US14431116

申请日：2013-09-26

Applicant: ENTEGRIS, INC.

Inventor： Weimin Li ,  David W. Peters ,  Scott L. Battle ,  William Hunks

IPC: C07F11/00 ,  C01G41/00 ,  C23C16/16 ,  C23C16/18 ,  C23C16/448 ,  C01C3/11 ,  C09D5/24 ,  H01B1/02

CPC classification number: C01G41/006 ,  C01C3/11 ,  C07F11/00 ,  C07F11/005 ,  C09D5/24 ,  C23C16/16 ,  C23C16/18 ,  C23C16/4485 ,  H01B1/02

Abstract: A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.

公开(公告)号：US20160362790A1

公开(公告)日：2016-12-15

申请号：US15107170

申请日：2014-12-20

Applicant: ENTEGRIS, INC.

Inventor： Thomas M. Cameron ,  William Hunks

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/40 ,  C07F17/00 ,  C01G23/07

CPC classification number: C23C16/45553 ,  C01G23/07 ,  C07F7/28 ,  C07F17/00 ,  C23C16/405 ,  H01L21/02186 ,  H01L21/02208 ,  H01L21/02271

Abstract: An organotitanium compound selected from the group consisting of: (i) organotitanium compounds of Formulae (I): wherein: each of R0, R1 and R2 is the same as or different from the others, and each is independently selected from organo substituents containing olefinic or alkynyl unsaturation; and each of R3, R4, R5, R6, and R7 is the same as or different from the others, and each is independently selected from H, C1-C12 alkyl, and substituents containing olefinic or alkynyl unsaturation; (ii) organotitanium compounds including at least one tris(alkylaminoalkyl)amine ligand and at least one dialkylamine ligand, wherein alkyl is C1-C6 alkyl; and (iii) organotitanium compounds including a cyclopentadienyl ligand, and a cyclic dienyl or trienyl ligand other than cyclopentadienyl Such organotitanium compounds are usefully employed in vapor deposition processes for depositing titanium on substrates, e.g., in the manufacture of microelectronic devices and microelectronic device precursor structures.