-
公开(公告)号：USRE50331E1
公开(公告)日：2025-03-04
申请号：US17658470
申请日：2022-04-08
Applicant: Everspin Technologies, Inc.
Inventor： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
-
公开(公告)号：US10199574B2
公开(公告)日：2019-02-05
申请号：US15941153
申请日：2018-03-30
Applicant: Everspin Technologies, Inc.
Inventor： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
-
公开(公告)号：US20180130944A1
公开(公告)日：2018-05-10
申请号：US15860914
申请日：2018-01-03
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Renu Whig , Phillip Mather , Kenneth Smith , Sanjeev Aggarwal , Jon Slaughter , Nicholas Rizzo
CPC classification number: H01L43/12 , B82Y25/00 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08
Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
-
公开(公告)号：US20170125670A1
公开(公告)日：2017-05-04
申请号：US15400889
申请日：2017-01-06
Applicant: Everspin Technologies, Inc.
Inventor： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
CPC classification number: H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
-
公开(公告)号：US09525129B2
公开(公告)日：2016-12-20
申请号：US15142721
申请日：2016-04-29
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Renu Whig , Phillip Mather , Kenneth Smith , Sanjeev Aggarwal , Jon Slaughter , Nicholas Rizzo
CPC classification number: H01L43/12 , B82Y25/00 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08
Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
-
Patent Agency Ranking
16.发明申请公开(公告)号：US20160315253A1
公开(公告)日：2016-10-27
申请号：US15147682
申请日：2016-05-05
Applicant: Everspin Technologies, Inc.
Inventor： Sarin A. Deshpande , Sanjeev Aggarwal , Kerry Joseph Nagel , Chaitanya Mudivarthi , Nicholas Rizzo , Jason Allen Janesky
CPC classification number: H01L43/12 , H01L27/222 , H01L43/08
Abstract: In forming a top electrode for a magnetoresistive device, photoresist used in patterning the electrode is stripped using a non-reactive stripping process. Such a non-reactive stripping process uses water vapor or some other non-oxidizing gas that also passivates exposed portions the magnetoresistive device. In such magnetoresistive devices, a non-reactive spacer layer is included that helps prevent diffusion between layers in the magnetoresistive device, where the non-reactive nature of the spacer layer prevents sidewall roughness that can interfere with accurate formation of the lower portions of the magnetoresistive device.
-
公开(公告)号：US09444037B2
公开(公告)日：2016-09-13
申请号：US15043633
申请日：2016-02-15
Applicant: Everspin Technologies, Inc.
Inventor： Renu Whig , Jason Janesky , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine
CPC classification number: H01L43/02 , B82Y10/00 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12 , Y10S977/935
Abstract: A magnetoresistive memory array including a plurality of magnetoresistive memory elements wherein each magnetoresistive memory element comprises a free layer including at least one ferromagnetic layer having perpendicular magnetic anisotropy, a fixed layer, and a tunnel barrier, disposed between and in contact with the free and fixed layers. The tunnel barrier includes a first metal-oxide layer, having a thickness between 1 and 10 Angstroms, a second metal-oxide layer, having a thickness between 3 and 6 Angstroms, disposed on the first metal-oxide layer, and a third metal-oxide layer, having a thickness between 3 and 6 Angstroms, disposed over the second metal-oxide layer. In one embodiment, the third metal-oxide layer is in contact with the free layer or fixed layer. The tunnel barrier may also include a fourth metal-oxide layer, having a thickness between 1 and 10 Angstroms, disposed between the second and third metal-oxide layers.
Abstract translation: 一种包括多个磁阻存储元件的磁阻存储器阵列，其中每个磁阻存储元件包括自由层，该自由层包括至少一个具有垂直磁各向异性的铁磁层，固定层和隧道势垒，该自由层设置在自由和固定 层。 隧道势垒包括设置在第一金属氧化物层上的第一金属氧化物层，其厚度为1至10埃，厚度为3埃至6埃的第二金属氧化物层，以及第三金属氧化物层， 氧化物层，其厚度为3埃至6埃，设置在第二金属氧化物层上。 在一个实施例中，第三金属氧化物层与自由层或固定层接触。 隧道势垒还可以包括设置在第二和第三金属氧化物层之间的厚度在1埃和10埃之间的第四金属氧化物层。
-
公开(公告)号：US20160163964A1
公开(公告)日：2016-06-09
申请号：US15046483
申请日：2016-02-18
Applicant: Everspin Technologies, Inc.
Inventor： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
CPC classification number: H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: A magnetoresistive memory element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer having perpendicular magnetic anisotropy, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. A first surface of the first dielectric is in contact with a first surface of the free magnetic layer. The magnetoresistive memory element further includes a second dielectric, having a first surface that is in contact with a second surface of the free magnetic layer, a conductor, including electrically conductive material, and an electrode, disposed between the second dielectric and the conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion including at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
Abstract translation: 磁阻存储元件（例如，自旋转矩磁阻存储元件）包括固定磁性层，具有垂直磁各向异性的自由磁性层和设置在固定磁性层和自由磁性层之间的第一电介质。 第一电介质的第一表面与自由磁性层的第一表面接触。 磁阻存储元件还包括第二电介质，其具有与自由磁性层的第二表面接触的第一表面，包括导电材料的导体以及设置在第二电介质和导体之间的电极。 电极包括：（i）具有与第二电介质的第二表面接触的表面的非铁磁部分，和（ii）第二部分，其包括设置在第二电介质的非铁磁部分之间的至少一个铁磁材料 电极和导体。
-
19.发明授权Magnetoresistive structure having a metal oxide tunnel barrier and method of manufacturing same 有权具有金属氧化物隧道势垒的磁阻结构及其制造方法公开(公告)号：US09293698B2
公开(公告)日：2016-03-22
申请号：US14701831
申请日：2015-05-01
Applicant: Everspin Technologies, Inc.
Inventor： Renu Whig , Jason Janesky , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine
CPC classification number: H01L43/02 , B82Y10/00 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12 , Y10S977/935
Abstract: In one aspect, the present inventions are directed to a magnetoresistive structure having a tunnel junction, and a process for manufacturing such a structure. The tunnel barrier may be formed between a free layer and a fixed layer in a plurality of repeating process of depositing a metal material and oxidizing at least a portion of the metal material. Where the tunnel barrier is formed by deposition of at least three metal materials interceded by an associated oxidization thereof, the oxidation dose associated with the second metal material may be greater than the oxidation doses associated with the first and third metal materials. In certain embodiments, the fixed layer may include a discontinuous layer of a metal, for example, Ta, in the fixed layer between two layers of a ferromagnetic material.
Abstract translation: 一方面，本发明涉及具有隧道结的磁阻结构，以及制造这种结构的方法。 可以在沉积金属材料和氧化至少一部分金属材料的多个重复工艺中，在自由层和固定层之间形成隧道势垒。 在通过沉积由其相关氧化作用介入的至少三种金属材料形成隧道势垒的地方，与第二金属材料相关的氧化剂量可能大于与第一和第三金属材料相关联的氧化剂量。 在某些实施例中，固定层可以在两层铁磁材料之间的固定层中包括不连续的金属层，例如Ta。
-
公开(公告)号：US20160013401A1
公开(公告)日：2016-01-14
申请号：US14860657
申请日：2015-09-21
Applicant: Everspin Technologies, Inc.
Inventor： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
CPC classification number: H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: A magnetoresistive memory element (for example, a spin-torque magnetoresistive memory element), includes first and second dielectric layers, wherein at least one of the dielectric layers is a magnetic tunnel junction. The memory element also includes a free magnetic layer having a first surface in contact with the first dielectric layer and a second surface in contact with the second dielectric layer. The free magnetic layer, which is disposed between the first and second dielectric layers, includes (i) a first high-iron interface region located along the first surface of the free magnetic layer, wherein the first high-iron interface region has at least 50% iron by atomic composition, and (ii) a first layer of ferromagnetic material adjacent to the first high-iron interface region, the first high-iron interface region between the first layer of ferromagnetic material and the first surface of the free magnetic layer.
Abstract translation: 磁阻存储元件（例如，自旋扭矩磁阻存储元件）包括第一和第二电介质层，其中至少一个电介质层是磁性隧道结。 存储元件还包括具有与第一介电层接触的第一表面和与第二介电层接触的第二表面的自由磁性层。 设置在第一和第二电介质层之间的自由磁性层包括（i）沿着自由磁性层的第一表面设置的第一高铁界面区域，其中第一高铁界面区域具有至少50 以及（ii）与第一高铁界面区域相邻的第一铁磁材料层，第一铁磁材料层与自由磁性层的第一表面之间的第一高铁界面区域。
-
-
-
-
-
-
-
-
-
Search Results
44
records
(took 0.026 seconds)
