Abstract:
Provided are an organic transistor having high carrier mobility that contains a compound represented by Formula (1-1) or (1-2) in a semiconductor active layer; a compound; an organic semiconductor material for a non-light-emitting organic semiconductor device; a material for an organic transistor; a coating solution for a non-light-emitting organic semiconductor device; and an organic semiconductor film for a non-light-emitting organic semiconductor device (X1 represents S, O, Se, or NR9; X2 represents S, O, or Se; each of R1 to R9 represents a hydrogen atom or a substituent; at least one of R1, R2, R3, R4, R5, R6, R7, R8, and R9 represents -L-R; each of R9 to R17 represents a hydrogen atom or a substituent; at least one of R9, R10, R11, R12, R13, R14, R15, R16, and R17 represents -L-R; L represents a specific divalent linking group; and R represents an alkyl group, a cyano group, a vinyl group, an ethynyl group, an oxyethylene group, an oligo-oxyethylene group, a siloxane group, an oligosiloxane group, or a trialkylsilyl group).
Abstract:
An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), or (101), in a semiconductor active layer is an organic film transistor using a compound that results in high carrier mobility when being used in the semiconductor active layer of the organic film transistor and exhibits high solubility in an organic solvent. (Each of R1 and R2 represents a hydrogen atom or a substituent; each of Ar1 and Ar2 independently represents a heteroarylene group or an arylene group; V1 represents a divalent linking group; m represents an integer of 0 to 6; cy represents a naphthalene ring or an anthracene ring; each of R3 and R4 represents a hydrogen atom or a substituent; each of Ar3 and Ar4 represents a heterocyclic aromatic ring or an aromatic ring; V2 represents a divalent linking group; p represents an integer of 0 to 6; n represents an integer of equal to or greater than 2; A is a divalent linking group represented by Formula (101′); each of RA1 to RA6 represents a hydrogen atom, a substituent, or a direct bond with Ar101 or Ar102 in Formula (101); and among the groups represented by RA1 to RA6, two different groups are direct bonds with Ar101 and Ar102 in Formula (101) respectively.)
Abstract translation:在半导体有源层中含有由式(1-1),(1-2)或(101)表示的n个重复单元构成的化合物的有机薄膜晶体管是使用结果的化合物的有机薄膜晶体管 当在有机薄膜晶体管的半导体有源层中使用时具有高载流子迁移率,并且在有机溶剂中表现出高溶解度。 (R 1和R 2各自表示氢原子或取代基; Ar 1和Ar 2各自独立地表示亚杂芳基或亚芳基; V1表示二价连接基团; m表示0〜6的整数; cy表示萘环 或蒽环; R 3和R 4各自表示氢原子或取代基; Ar 3和Ar 4各自表示杂环芳香环或芳香环; V2表示二价连接基团; p表示0〜6的整数; n 表示等于或大于2的整数; A是由式(101')表示的二价连接基团; RA 1至RA 6各自表示氢原子,取代基或与式(101)中的Ar 101或Ar 102直接结合 );在由RA1〜RA6表示的基团中,两个不同的基团分别是式(101)中的Ar 101和Ar 102的直接键。
Abstract:
Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)
Abstract:
Objects of the present invention are to provide a composition for forming an organic semiconductor film that has excellent preservation stability and makes the obtained organic semiconductor element exhibit excellent driving stability in the atmosphere, to provide an organic semiconductor film using the composition for forming an organic semiconductor film, a method for manufacturing the organic semiconductor film, an organic semiconductor element, a method for manufacturing the organic semiconductor element, and to provide a novel organic semiconductor compound.A composition for forming an organic semiconductor film of the present invention contains a specific organic semiconductor having an alkoxyalkyl group as a component A and a solvent as a component B, in which a content of a non-halogen-based solvent is equal to or greater than 50% by mass with respect to a total content of the component B, and a content of the component A is equal to or greater than 0.7% by mass and less than 15% by mass.
Abstract:
An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), (101-1), or (101-2), in a semiconductor active layer is an organic film transistor using a compound having high carrier mobility and high solubility in an organic solvent. (Cy represents a benzene ring, a naphthalene ring, or an anthracene ring; each of R11 to R14 and R15 to R18 independently represents a hydrogen atom or a substituent; each of Ar1 to Ar4 independently represents a heteroarylene group or an arylene group; each of V1 and V2 represents a divalent linking group; m represents an integer of 0 to 6; when m is equal to or greater than 2, two or more groups represented by V1 may be the same as or different from each other; n is equal to or greater than 2; p represents an integer of 0 to 6; and when p is equal to or greater than 2, two or more groups represented by V2 may be the same as or different from each other.)