公开(公告)号：US12038689B2

公开(公告)日：2024-07-16

申请号：US17212546

申请日：2021-03-25

申请人： FUJIFILM Corporation

发明人： Akihiro Kaneko ,  Kazunari Yagi ,  Takashi Kawashima ,  Akiyoshi Goto

IPC分类号： G03F7/039 ,  C08F212/14 ,  C08F220/18 ,  C08F220/28 ,  C08F220/36 ,  C09D125/18 ,  C09D133/10 ,  C09D133/16 ,  G03F7/004 ,  G03F7/30 ,  G03F7/38

CPC分类号： G03F7/0392 ,  C08F212/22 ,  C08F220/1808 ,  C08F220/1809 ,  C08F220/1812 ,  C08F220/1818 ,  C08F220/281 ,  C08F220/282 ,  C08F220/283 ,  C08F220/365 ,  C09D125/18 ,  C09D133/10 ,  C09D133/16 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/30 ,  G03F7/38

摘要： The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is excellent in LER performance and a collapse suppressing ability. Furthermore, the present invention provides a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes an acid-decomposable resin having a repeating unit represented by General Formula (1), and a compound that generates an acid upon irradiation with actinic rays or radiation.

公开(公告)号：US11604412B2

公开(公告)日：2023-03-14

申请号：US16722026

申请日：2019-12-20

申请人： FUJIFILM Corporation

发明人： Akihiro Kaneko ,  Junichi Ito ,  Takashi Kawashima ,  Michihiro Ogawa ,  Tomotaka Tsuchimura

IPC分类号： G03F7/039 ,  G03F7/004 ,  C08F212/14 ,  G03F7/20 ,  G03F7/30

摘要： An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a group represented by General Formula (1) and a compound that generates an acid upon irradiation with actinic rays or radiation.

公开(公告)号：US09653686B2

公开(公告)日：2017-05-16

申请号：US14993371

申请日：2016-01-12

申请人： FUJIFILM Corporation

发明人： Koji Takaku ,  Akihiro Kaneko ,  Hiroki Sugiura ,  Kensuke Masui ,  Yasunori Yonekuta ,  Yuki Hirai ,  Masashi Koyanagi

IPC分类号： C08G59/00 ,  H01L51/00 ,  C08G61/12 ,  C07C49/697 ,  C08G61/02 ,  H01L51/05

CPC分类号： H01L51/0036 ,  C07C49/697 ,  C07C2603/10 ,  C08G61/02 ,  C08G61/12 ,  C08G61/126 ,  C08G2261/1412 ,  C08G2261/148 ,  C08G2261/149 ,  C08G2261/18 ,  C08G2261/314 ,  C08G2261/3142 ,  C08G2261/3223 ,  C08G2261/3241 ,  C08G2261/3242 ,  C08G2261/332 ,  C08G2261/3325 ,  C08G2261/342 ,  C08G2261/344 ,  C08G2261/364 ,  C08G2261/414 ,  C08G2261/92 ,  H01L51/0007 ,  H01L51/0043 ,  H01L51/0545 ,  H01L51/0558

摘要： An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), or (101), in a semiconductor active layer is an organic film transistor using a compound that results in high carrier mobility when being used in the semiconductor active layer of the organic film transistor and exhibits high solubility in an organic solvent; (Each of R1 R2 represents a hydrogen atom or a substituent; each of Ar1 and Ar2 independently represents a heteroarylene group or an arylene group; V1 represents a divalent linking group; m represents an integer of 0 to 6; cy represents a naphthalene ring or an anthracene ring; each of R3 and R4 represents a hydrogen atom or a substituent; each of Ar3 and Ar4 represents a heterocyclic aromatic ring or an aromatic ring; V2 represents a divalent linking group; p represents an integer of 0 to 6; n represents an integer of equal to or greater than 2; A is a divalent linking group represented by Formula (101′); each of RA1 to RA6 represents a hydrogen atom, a substituent, or a direct bond with Ar101 or Ar102 in Formula (101); and among the groups represented by RA1 to RA6, two different groups are direct bonds with Ar101 and Ar102 in Formula (101) respectively.)